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MR2A08AMYS35R

Everspin Technologies

MR2A08AMYS35R by Everspin Technologies

Everspin Technologies' MR2A08AMYS35R is a 256Kx8 memory IC with 2097152 bit density. Operating at 3.3V, it has a max access time of 35ns and AEC-Q100 screening level for automotive applications. This small outline, thin profile package is ideal for asynchronous operations in automotive electronics with a temperature range from -40 to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,721 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 430 parts In-Stock

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$18.650

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Everspin Technologies presents the MR2A08AMYS35R, a cutting-edge Memory IC designed to deliver top-notch performance and reliability. This product, part of the Other Function Memory ICs category, boasts AEC-Q100 screening level, making it ideal for automotive applications. With a nominal supply voltage of 3.3V and fast access time of 35ns, this memory circuit offers seamless operation in a compact package. Trust Everspin Technologies for high-quality solutions that enhance efficiency and streamline processes. Upgrade your systems with the MR2A08AMYS35R and experience unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for long-lasting usage.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with commonly used power supplies.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for synchronization.

Maximum Operating Temperature: 125 °C

Can operate efficiently in high-temperature environments.

Memory Width: 8

Provides sufficient width for storing data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Maximum Access Time: 35 ns

Fast access time for quick data retrieval.

Technical Specifications

Other Function Memory ICs MR2A08AMYS35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.02 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

135 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

MR2A08AMYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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