Loading...

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.

Other Function Memory ICs

Available Parts 213

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Screening Level Maximum Seated Height Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Type Width Write Protection
XC17S20PD8C by Xilinx

XC17S20PD8C

Xilinx

The Xilinx XC17S20PD8C is a 178144-bit memory circuit IC with synchronous operation and 3-STATE output. It operates at a max clock frequency of 10 MHz, suitable for applications requiring high-speed memory access. With a package style of IN-LINE and through-hole terminal form, it is commonly used in commercial-grade systems needing reliable memory storage.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

70 Cel

0 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20PD8I by Xilinx

XC17S20PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

85 Cel

-40 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8C by Xilinx

XC17S20XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 1;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

70 Cel

0 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8I by Xilinx

XC17S20XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

85 Cel

-40 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8C by Xilinx

XC17S30PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

70 Cel

0 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8I by Xilinx

XC17S30PD8I

Xilinx

XC17S30PD8I by Xilinx is a 247968-bit MEMORY CIRCUIT with 3-STATE output characteristics. Operating at 10 MHz clock frequency, it has an industrial temperature grade and synchronous mode. Commonly used in applications requiring reliable memory storage and retrieval within the industrial sector.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

85 Cel

-40 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8C by Xilinx

XC17S30XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Current: 5 mA;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8I by Xilinx

XC17S30XLPD8I

Xilinx

XC17S30XLPD8I by Xilinx is a 249168-bit MEMORY CIRCUIT with 3.3V supply, operating at up to 10MHz clock frequency. It features an industrial temperature grade range from -40°C to 85°C and offers a synchronous operation mode. This IC is commonly used in applications requiring high-speed memory functions.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

85 Cel

-40 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8C by Xilinx

XC17S40PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

70 Cel

0 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8I by Xilinx

XC17S40PD8I

Xilinx

XC17S40PD8I by Xilinx is a 329312-bit MEMORY CIRCUIT IC with 3-STATE output, operating at up to 10 MHz clock frequency. It features a synchronous mode, common I/O type, and operates in industrial temperature range. Ideal for applications requiring high memory density and low standby current.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

85 Cel

-40 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPD8C by Xilinx

XC17S40XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 4.5974 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPD8I by Xilinx

XC17S40XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; No. of Words Code: 330696;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

85 Cel

-40 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40SO20C by Xilinx

XC17S40SO20C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

329312 bit

MEMORY CIRCUIT

1

3

1

20

329312 words

329312

SYNCHRONOUS

70 Cel

0 Cel

329312X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

5

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S40SO20I by Xilinx

XC17S40SO20I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Package Equivalence Code: SOP20,.4;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

329312 bit

MEMORY CIRCUIT

1

3

1

20

329312 words

329312

SYNCHRONOUS

85 Cel

-40 Cel

329312X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

5

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S40XLSO20C by Xilinx

XC17S40XLSO20C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

330696 bit

MEMORY CIRCUIT

1

3

1

20

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S40XLSO20I by Xilinx

XC17S40XLSO20I

Xilinx

The Xilinx XC17S40XLSO20I is a 3.3V memory circuit IC with 330696 bits, operating synchronously at up to 10MHz. It features a small outline package with 20 terminals and is ideal for industrial applications requiring common I/O type and 3-STATE output characteristics.

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

330696 bit

MEMORY CIRCUIT

1

3

1

20

330696 words

330696

SYNCHRONOUS

85 Cel

-40 Cel

330696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S05VO8C by Xilinx

XC17S05VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

53984 bit

MEMORY CIRCUIT

1

3

1

8

53984 words

53984

SYNCHRONOUS

70 Cel

0 Cel

53984X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S05VO8I by Xilinx

XC17S05VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Standby Current: .00005 Amp;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

53984 bit

MEMORY CIRCUIT

1

3

1

8

53984 words

53984

SYNCHRONOUS

85 Cel

-40 Cel

53984X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S05XLVO8C by Xilinx

XC17S05XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Organization: 54544X1;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

54544 bit

MEMORY CIRCUIT

1

3

1

8

54544 words

54544

SYNCHRONOUS

70 Cel

0 Cel

54544X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S05XLVO8I by Xilinx

XC17S05XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Organization: 54544X1;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

54544 bit

MEMORY CIRCUIT

1

3

1

8

54544 words

54544

SYNCHRONOUS

85 Cel

-40 Cel

54544X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10VO8C by Xilinx

XC17S10VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95008 bit

MEMORY CIRCUIT

1

3

1

8

95008 words

95008

SYNCHRONOUS

70 Cel

0 Cel

95008X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10VO8I by Xilinx

XC17S10VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95008 bit

MEMORY CIRCUIT

1

3

1

8

95008 words

95008

SYNCHRONOUS

85 Cel

-40 Cel

95008X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10XLVO8C by Xilinx

XC17S10XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95752 bit

MEMORY CIRCUIT

1

3

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10XLVO8I by Xilinx

XC17S10XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95752 bit

MEMORY CIRCUIT

1

3

1

8

95752 words

95752

SYNCHRONOUS

85 Cel

-40 Cel

95752X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20VO8C by Xilinx

XC17S20VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

178144 bit

MEMORY CIRCUIT

1

3

1

8

178144 words

178144

SYNCHRONOUS

70 Cel

0 Cel

178144X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20VO8I by Xilinx

XC17S20VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Density: 178144 bit;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

178144 bit

MEMORY CIRCUIT

1

3

1

8

178144 words

178144

SYNCHRONOUS

85 Cel

-40 Cel

178144X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20XLVO8C by Xilinx

XC17S20XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 179160 words;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

179160 bit

MEMORY CIRCUIT

1

3

1

8

179160 words

179160

SYNCHRONOUS

70 Cel

0 Cel

179160X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20XLVO8I by Xilinx

XC17S20XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

179160 bit

MEMORY CIRCUIT

1

3

1

8

179160 words

179160

SYNCHRONOUS

85 Cel

-40 Cel

179160X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30VO8C by Xilinx

XC17S30VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

247968 bit

MEMORY CIRCUIT

1

3

1

8

247968 words

247968

SYNCHRONOUS

70 Cel

0 Cel

247968X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30VO8I by Xilinx

XC17S30VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

247968 bit

MEMORY CIRCUIT

1

3

1

8

247968 words

247968

SYNCHRONOUS

85 Cel

-40 Cel

247968X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30XLVO8C by Xilinx

XC17S30XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Technology: CMOS;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

249168 bit

MEMORY CIRCUIT

1

3

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30XLVO8I by Xilinx

XC17S30XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Organization: 249168X1;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

249168 bit

MEMORY CIRCUIT

1

3

1

8

249168 words

249168

SYNCHRONOUS

85 Cel

-40 Cel

249168X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

SN74LS600ADW by Texas Instruments

SN74LS600ADW

Texas Instruments

SN74LS600ADW by Texas Instruments is a 16KX1 memory circuit IC with TTL technology. Operating at 5V, it has 16384-bit memory density and functions in asynchronous mode. This small outline package is ideal for applications requiring reliable memory storage in commercial temperature environments.

DRAM IS CONFIGURED AS 4 K X 1

R-PDSO-G20

12.8 mm

16384 bit

MEMORY CIRCUIT

1

1

20

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

2.65 mm

5.25 V

4.75 V

5

YES

TTL

COMMERCIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

MR25H256MDC by Everspin Technologies

MR25H256MDC

Everspin Technologies

MR25H256MDC by Everspin Technologies is a 262144-bit MEMORY CIRCUIT with 32KX8 organization, operating at 3.3V. This SMALL OUTLINE IC has a temperature range of -40 to 125 °C and is AEC-Q100 compliant, suitable for AUTOMOTIVE applications requiring reliable synchronous memory solutions.

R-PDSO-N8

6 mm

262144 bit

MEMORY CIRCUIT

8

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

HSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG

NOT SPECIFIED

3/3.3

Not Qualified

AEC-Q100

1.05 mm

.00001 Amp

SRAMs

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

DS2434-E by Maxim Integrated

DS2434-E

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Shape: ROUND; No. of Words Code: 256; Organization: 256X1;

O-XBCY-W3

256 bit

MEMORY CIRCUIT

1

1

3

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X1

UNSPECIFIED

SIP3,.075,50

ROUND

CYLINDRICAL

3.6/6.4

Not Qualified

.000003 Amp

Other Memory ICs

1.5 mA

6.4 V

3.6 V

NO

CMOS

INDUSTRIAL

WIRE

1.27 mm

BOTTOM

XC17S150XLPD8C by Xilinx

XC17S150XLPD8C

Xilinx

Xilinx XC17S150XLPD8C is a 1040128-bit MEMORY CIRCUIT with 3.3V supply, 10MHz clock frequency, and 70°C operating temp. Ideal for applications requiring synchronous operation in commercial-grade environments.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1040128 bit

MEMORY CIRCUIT

1

1

1

8

1040128 words

1040128

SYNCHRONOUS

70 Cel

0 Cel

1040128X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150XLSO20C by Xilinx

XC17S150XLSO20C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

1040128 bit

MEMORY CIRCUIT

1

3

1

20

1040128 words

1040128

SYNCHRONOUS

70 Cel

0 Cel

1040128X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

CY8C20140-LDX2I by Cypress Semiconductor

CY8C20140-LDX2I

Cypress Semiconductor

CY8C20140-LDX2I by Cypress Semiconductor is a 2KX1 MEMORY CIRCUIT IC with SYNCHRONOUS operation, suitable for INDUSTRIAL applications. It operates at 3V, has 16 terminals in a SQUARE package style, and can withstand temperatures from -40 to 85 °C.

SRAM IS ORGANISED AS 512MB

S-XQCC-N16

e4

3 mm

2048 bit

MEMORY CIRCUIT

1

3

1

16

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX1

UNSPECIFIED

VQCCN

SQUARE

CHIP CARRIER, VERY THIN PROFILE

260

Not Qualified

.6 mm

5.25 V

2.4 V

3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

QUAD

20

3 mm

MT9VDDT3272AG-335G4 by Micron Technology

MT9VDDT3272AG-335G4

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N184

2415919104 bit

72

184

33554432 words

32M

70 Cel

0 Cel

32MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.036 Amp

Other Memory ICs

3690 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT9VDDT3272AG-265G4 by Micron Technology

MT9VDDT3272AG-265G4

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.75 ns

133 MHz

COMMON

R-PDMA-N184

2415919104 bit

72

184

33554432 words

32M

70 Cel

0 Cel

32MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.036 Amp

Other Memory ICs

3285 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT9VDDT6472AG-335F1 by Micron Technology

MT9VDDT6472AG-335F1

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N184

4831838208 bit

72

184

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.045 Amp

Other Memory ICs

3645 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MR2A16ACMA35 by Everspin Technologies

MR2A16ACMA35

Everspin Technologies

MR2A16ACMA35 by Everspin: 256KX16 memory IC with 35ns access time, operates at 3.3V. Suitable for industrial applications, features low profile grid array package and CMOS technology.

35 ns

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.028 Amp

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

8 mm

SRIX4K-SBN18/1GE by STMicroelectronics

SRIX4K-SBN18/1GE

STMicroelectronics

SRIX4K-SBN18/1GE by STMicroelectronics is a CMOS memory IC with a density of 4096 bits, operating asynchronously b/w -25 °C and 85°C. It features a supply voltage range of 2.5V to 3.5V and organizes data in 128x32 words. Ideal for compact applications requiring reliable memory solutions.

X-XUUC-N

4096 bit

MEMORY CIRCUIT

32

1

128 words

128

ASYNCHRONOUS

85 Cel

-25 Cel

128X32

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

Not Qualified

3.5 V

2.5 V

3

YES

CMOS

OTHER

NO LEAD

UPPER

SRTAG2K-DMC6T/2 by STMicroelectronics

SRTAG2K-DMC6T/2

STMicroelectronics

SRTAG2K-DMC6T/2 by STMicroelectronics is a CMOS memory IC designed for industrial applications, featuring an asynchronous operating mode and a compact 8-terminal dual configuration. It operates b/w -40 °C to 85 °C with a density of 2048 bits (256x8). Its small outline package ensures efficient space utilization in electronic designs.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

2 mm

STTS424BDN3F by STMicroelectronics

STTS424BDN3F

STMicroelectronics

STTS424BDN3F from STMicroelectronics is a compact memory IC designed for surface mount applications. It features an 8-terminal, rectangular package with nickel palladium gold finish and withstands peak reflow temps of 260 °C for 30s. Ideal for various electronic devices requiring reliable memory solutions.

R-PDSO-N8

e4

MEMORY CIRCUIT

1

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

MR0A08BCYS35R by Everspin Technologies

MR0A08BCYS35R

Everspin Technologies

MR0A08BCYS35R by Everspin Tech: 128KX8 memory IC with 1048576 bit density, operates at 3.3V, and has a max access time of 35 ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact small outline package.

35 ns

R-PDSO-G44

18.41 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

MR0A08BMA35 by Everspin Technologies

MR0A08BMA35

Everspin Technologies

Everspin Technologies' MR0A08BMA35 is a 128Kx8 memory IC with 1048576-bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package suitable for commercial applications.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

8 mm

MR0A08BYS35R by Everspin Technologies

MR0A08BYS35R

Everspin Technologies

MR0A08BYS35R by Everspin Technologies is a 128KX8 memory circuit with a CMOS technology. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 35ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval.

35 ns

R-PDSO-G44

18.41 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

44

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm