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SRIX4K-SBN18/1GE

STMicroelectronics

SRIX4K-SBN18/1GE by STMicroelectronics

SRIX4K-SBN18/1GE by STMicroelectronics is a CMOS memory IC with a density of 4096 bits, operating asynchronously b/w -25 °C and 85°C. It features a supply voltage range of 2.5V to 3.5V and organizes data in 128x32 words. Ideal for compact applications requiring reliable memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,094 parts In-Stock

1+ parts

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4,094

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Anansix

USA . 1,598 parts In-Stock

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1,598

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Digiode

USA . 1,186 parts In-Stock

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1,186

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 738 parts In-Stock

1+ parts

$3.335

100+ parts

-

1k+ parts

$3.002

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738

$3.335

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$3.002

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MKK Technologies

India . 1,789 parts In-Stock

1+ parts

$6.271

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1,789

$6.271

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DigiPath Technology Company

USA . 1,789 parts In-Stock

1+ parts

$6.271

100+ parts

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1,789

$6.271

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AZTECH Wire

Italy . 596 parts In-Stock

1+ parts

$21.160

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596

$21.160

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QUARKTWIN TECHNOLOGY LTD

USA . 21,251 parts In-Stock

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21,251

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Corphita

USA . 1,745 parts In-Stock

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1,745

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Parana Technologies

USA . 1,451 parts In-Stock

1+ parts

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100+ parts

$3.988

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1,451

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$3.988

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Overview

Unlock the potential of your projects with the SRIX4K-SBN18/1GE from STMicroelectronics, a leader in innovative memory solutions. This high-quality asynchronous memory IC offers unparalleled reliability across diverse applications—from RFID systems to smart cards—ensuring optimal performance even in extreme temperatures. Experience reduced power consumption and enhanced efficiency, empowering your designs with the cutting-edge technology that only STMicroelectronics can provide. Elevate your success today!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for compact PCB designs and efficient space utilization, making it ideal for modern electronics.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times and simpler design requirements, improving the overall performance of the circuit.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3 V ensures compatibility with widely used power supplies, enhancing versatility in various applications.

Package Style (Meter): UNCASED CHIP

The unencased chip style provides a direct connection to the PCB, optimizing thermal performance and minimizing electrical noise.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC can function reliably in a variety of environments and applications.

Organization: 128X32

The 128x32 organization enhances data handling capabilities, making this memory IC suitable for a range of applications requiring efficient data storage.

Minimum Operating Temperature: -25 °C

The wide temperature range down to -25 °C ensures reliable operation in harsh environments, expanding its application scope.

Terminal Position: UPPER

Upper terminal position facilitates easier soldering and integration with PCB layouts, streamlining assembly processes.

Minimum Supply Voltage (Vsup): 2.5 V

The minimum supply voltage of 2.5 V allows for operation in low-power environments, reducing energy consumption and extending battery life.

Technology: CMOS

Using CMOS technology provides low static power consumption and higher speed, making this memory IC both efficient and fast.

Terminal Form: NO LEAD

No lead design minimizes the footprint and enhances performance in high-frequency applications while also being environmentally friendly.

No. of Words: 128 words

With 128 words available, this memory IC accommodates moderate data requirements, suitable for many embedded applications.

Memory Width: 32

A memory width of 32 allows for wider data access, improving read and write speeds for enhanced performance.

No. of Words Code: 128

The specification of 128 words code shows ample memory for code storage in embedded systems, catering to various memory-intensive applications.

Maximum Supply Voltage (Vsup): 3.5 V

The maximum supply voltage of 3.5 V provides flexibility for designers to use different power supply configurations without compromising performance.

Memory Density: 4096 bit

A memory density of 4096 bits ensures that this memory IC can store considerable amounts of data, meeting diverse application needs.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for data storage tasks, ensuring reliability and performance for critical applications.

Technical Specifications

Other Function Memory ICs SRIX4K-SBN18/1GE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

X-XUUC-N

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

128X32

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

3.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Trade Compliance

SRIX4K-SBN18/1GE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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