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Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.

Other Function Memory ICs

Available Parts 213

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Screening Level Maximum Seated Height Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Type Width Write Protection
SLE66R01PNBX1SA1 by Infineon Technologies

SLE66R01PNBX1SA1

Infineon Technologies

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Code: DIE; Package Shape: UNSPECIFIED; Terminal Form: NO LEAD;

X-XUUC-N2

1216 bit

MEMORY CIRCUIT

32

1

2

38 words

38

SYNCHRONOUS

70 Cel

-25 Cel

38X32

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

OTHER

NO LEAD

UPPER

EMD3D256M08G1-150CBS1R by Everspin Technologies

EMD3D256M08G1-150CBS1R

Everspin Technologies

EMD3D256M08G1-150CBS1R by Everspin: 32MX8 memory IC with 268MB density, operates at 1.5V, synchronous mode. Ideal for applications requiring high-speed and reliable memory storage in compact devices.

R-PBGA-B78

13 mm

268435456 bit

MEMORY CIRCUIT

8

1

78

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

SLE66R01PNNBX1SA2 by Infineon Technologies

SLE66R01PNNBX1SA2

Infineon Technologies

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Code: DIE; Package Shape: UNSPECIFIED; JESD-30 Code: X-XUUC-N2;

X-XUUC-N2

1216 bit

MEMORY CIRCUIT

8

1

2

152 words

152

SYNCHRONOUS

70 Cel

-25 Cel

152X8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

ST25TB02K-AC6G6 by STMicroelectronics

ST25TB02K-AC6G6

STMicroelectronics

ST25TB02K-AC6G6 from STMicroelectronics is a round, no-lead memory IC designed for industrial applications. It operates b/w -40 °C and 85 °C, with a density of 2048 bits organized as 2Kx1. Ideal for surface mount solutions requiring reliable data storage.

O-XUUC-N

2048 bit

MEMORY CIRCUIT

1

1

2048 words

2K

85 Cel

-40 Cel

2KX1

UNSPECIFIED

DIE

DIE OR CHIP

ROUND

UNCASED CHIP

YES

INDUSTRIAL

NO LEAD

UNSPECIFIED

ST25TB04K-AC6G6 by STMicroelectronics

ST25TB04K-AC6G6

STMicroelectronics

ST25TB04K-AC6G6 from STMicroelectronics is a CMOS memory IC with 4K words and operates asynchronously. It features a -40 °C to 85 °C industrial temp range and comes in a no-lead, rectangular package. Ideal for compact applications requiring reliable data storage.

R-XUUC-N4

4096 bit

MEMORY CIRCUIT

1

1

4

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX1

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

ST25TB512-AT6G6 by STMicroelectronics

ST25TB512-AT6G6

STMicroelectronics

ST25TB512-AT6G6 from STMicroelectronics is a round, no-lead memory IC designed for industrial applications. It operates b/w -40 °C to 85 °C with a density of 512 bits and an organization of 512x1 words. Ideal for surface mount integration in various electronic devices.

O-XUUC-N

512 bit

MEMORY CIRCUIT

1

1

512 words

512

85 Cel

-40 Cel

512X1

UNSPECIFIED

DIE

DIE OR CHIP

ROUND

UNCASED CHIP

YES

INDUSTRIAL

NO LEAD

UNSPECIFIED

MB85AS4MTPF-G-BCERE1 by Fujitsu

MB85AS4MTPF-G-BCERE1

Fujitsu

Fujitsu's MB85AS4MTPF-G-BCERE1 is a 512KX8 memory IC with CMOS technology. Operating at 3.3V, it has a memory density of 4194304 bit and supports synchronous operation. Ideal for industrial applications, this small outline package measures 5.85mm x 5.3mm with a max temperature of 85°C.

R-PDSO-G8

5.85 mm

4194304 bit

MEMORY CIRCUIT

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.73 mm

3.6 V

1.65 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.3 mm

MR45V200BRAZAARL by Lapis Semiconductor

MR45V200BRAZAARL

Lapis Semiconductor

MR45V200BRAZAARL by Lapis Semiconductor is a 256KX8 memory IC with CMOS technology. Operating at 3.3V, it has an industrial temperature grade and offers 2097152 bits of memory density. Ideal for applications requiring synchronous operation in industrial settings.

R-PDIP-T8

9.2 mm

2097152 bit

MEMORY CIRCUIT

8

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

3.6 V

2.7 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

RP-SMLE04DA1 by Panasonic

RP-SMLE04DA1

Panasonic

The Panasonic RP-SMLE04DA1 is a rectangular, surface-mount memory IC with 4GX8 organization and 8-bit memory width. Operating asynchronously from -25°C to 85°C, it offers a memory density of 34.36 Gb for various applications requiring high-speed data storage and retrieval in compact electronic devices.

R-XUUC-N

34359738368 bit

MEMORY CIRCUIT

8

1

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-25 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

MR44V100AMAZAATL by Lapis Semiconductor

MR44V100AMAZAATL

Lapis Semiconductor

MR44V100AMAZAATL by Lapis Semiconductor is a 128KX8 MEMORY CIRCUIT with 1048576 bit Memory Density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and is ideal for industrial applications requiring small outline, low profile Package Style.

R-PDSO-G8

4.9 mm

1048576 bit

MEMORY CIRCUIT

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

LSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

1.65 mm

3.6 V

1.8 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

MR45V032AMAZBATL by Lapis Semiconductor

MR45V032AMAZBATL

Lapis Semiconductor

MR45V032AMAZBATL by Lapis Semiconductor is a small outline, low profile memory IC with a capacity of 4096 words and a memory density of 32768 bits. It operates synchronously at a nominal voltage of 3.3V and can withstand temperatures ranging from -40 to 85°C. This memory circuit is commonly used in industrial applications requiring compact and reliable storage solutions.

R-PDSO-G8

4.9 mm

32768 bit

MEMORY CIRCUIT

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

LSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

1.65 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

HMC-EF183 by Omron

HMC-EF183

Omron

Omron's HMC-EF183 is a 128MX8 memory IC with 1073741824-bit density. It features CMOS technology, surface mount compatibility, and rectangular package style. Ideal for applications requiring high memory capacity in compact designs.

R-XUUC-N

1073741824 bit

MEMORY CIRCUIT

8

1

134217728 words

128M

128MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

NO LEAD

UPPER

NOT SPECIFIED

MT29C4G96MAZBACJG-5WT by Micron Technology

MT29C4G96MAZBACJG-5WT

Micron Technology

MT29C4G96MAZBACJG-5WT by Micron Technology is a 256MX16 Synchronous Flash+SDRAM memory IC with 4294967296 bit density. Operating at 1.8V, it offers a max access time of 25ns and is ideal for applications requiring high-speed data processing in compact electronic devices.

25 ns

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

FLASH+SDRAM

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

.9 mm

Other Memory ICs

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C4G48MAZBAAKQ-5WT by Micron Technology

MT29C4G48MAZBAAKQ-5WT

Micron Technology

Micron Technology's MT29C4G48MAZBAAKQ-5WT is a 256MX16 memory IC with 4294967296-bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Ideal for applications requiring high memory capacity in compact devices with very thin profile and fine pitch package style.

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.75 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C4G96MAZBACJG-5IT by Micron Technology

MT29C4G96MAZBACJG-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX16;

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.9 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C8G96MAZBADJV-5IT by Micron Technology

MT29C8G96MAZBADJV-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

8589934592 bit

MEMORY CIRCUIT

16

1

168

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

AF4GUDI-OEM by Atp Electronics

AF4GUDI-OEM

Atp Electronics

AF4GUDI-OEM by Atp Electronics is a CMOS memory circuit with 4GX8 organization, 8-bit memory width, and 34.36 Gb density. It operates in industrial temperature range (-40 to 85°C) and is surface mountable for various applications requiring high-density memory solutions.

X-XUUC-N

34359738368 bit

MEMORY CIRCUIT

8

1

4294967296 words

4G

85 Cel

-40 Cel

4GX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

AF8GUD3-OEM by Atp Electronics

AF8GUD3-OEM

Atp Electronics

AF8GUD3-OEM by Atp Electronics is an 8GX8 memory IC with a memory density of 68719476736 bit. It operates b/w -25 to 85 °C and features CMOS technology. Ideal for applications requiring high memory capacity in a compact, surface-mount package style.

X-XUUC-N

68719476736 bit

MEMORY CIRCUIT

8

1

8589934592 words

8G

85 Cel

-25 Cel

8GX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

OTHER

NO LEAD

UPPER

MT29C1G12MAAIVAMD-5ITTR by Micron Technology

MT29C1G12MAAIVAMD-5ITTR

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

LPDRAM IS ORGANISED AS 32M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

8

1

130

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

47L64-I/SN by Microchip Technology

47L64-I/SN

Microchip Technology

47L64-I/SN by Microchip Technology is a small outline memory IC with 8KX8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is suitable for industrial applications requiring a memory density of 65536 bit, fast access time of 550 ns, and a supply voltage range from 2.7V to 3.6V.

550 ns

R-PDSO-G8

4.9 mm

65536 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

1.75 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

MF1SEP1001DA4/03J by NXP Semiconductors

MF1SEP1001DA4/03J

NXP Semiconductors

NFC/RFID TAGS AND TRANSPONDERS; Package Code: XMA; Package Shape: RECTANGULAR; Organization: 1KX8; Terminal Form: NO LEAD; Operating Mode: ASYNCHRONOUS;

R-PXMA-N

8192 bit

NFC/RFID TAGS AND TRANSPONDERS

8

1

1024 words

1K

ASYNCHRONOUS

70 Cel

-25 Cel

1KX8

PLASTIC/EPOXY

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

NO LEAD

UNSPECIFIED