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MT29C4G48MAZBAAKQ-5WT

Micron Technology

MT29C4G48MAZBAAKQ-5WT by Micron Technology

Micron Technology's MT29C4G48MAZBAAKQ-5WT is a 256MX16 memory IC with 4294967296-bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Ideal for applications requiring high memory capacity in compact devices with very thin profile and fine pitch package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 19,300 parts In-Stock

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Vyrian

USA . 7,655 parts In-Stock

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Digiode

USA . 531 parts In-Stock

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Nova Conductors

Japan . 72 parts In-Stock

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AZTECH Wire

Italy . 1,205 parts In-Stock

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$8.240

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Ampacity Inc.

Singapore . 680 parts In-Stock

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$21.000

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QUARKTWIN TECHNOLOGY LTD

USA . 11,442 parts In-Stock

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Microchip USA

USA . 7,994 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,553 parts In-Stock

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Metaverse IC Inc.

Canada . 704 parts In-Stock

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Kepictronics

USA . 604 parts In-Stock

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Corphita

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Aranea Global

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Overview

Unlock the power of cutting-edge technology with the MT29C4G48MAZBAAKQ-5WT by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality memory ICs that are perfect for a wide range of applications. From enhancing system performance to improving data storage capabilities, this product offers unparalleled value and benefits to customers. Trust in Micron Technology to provide you with reliable and efficient solutions for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable electronic devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at precise, predetermined times, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a low supply voltage of 1.8V, making it energy-efficient and suitable for battery-powered devices.

No. of Terminals: 168

Having a high number of terminals allows for more connections and functionality, making it versatile for various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the product can withstand higher temperatures, ensuring reliable performance in demanding environments.

Memory Width: 16

The 16-bit memory width allows for fast data transfer and processing, improving overall system speed and efficiency.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the product energy-efficient and reliable.

Memory Density: 4294967296 bit

With a high memory density of 4294967296 bits, the product offers ample storage capacity for storing large amounts of data.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit IC, the product is specifically designed for storing and retrieving data efficiently, making it a reliable choice for memory-intensive applications.

Technical Specifications

Other Function Memory ICs MT29C4G48MAZBAAKQ-5WT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

Additional Features:

MOBILE LPDDR DEVICE ALSO AVAILABLE

JESD-30 Code:

S-PBGA-B168

Length:

12 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

168

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.75 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

MT29C4G48MAZBAAKQ-5WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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