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EMD3D256M08G1-150CBS1R

Everspin Technologies

EMD3D256M08G1-150CBS1R by Everspin Technologies

EMD3D256M08G1-150CBS1R by Everspin: 32MX8 memory IC with 268MB density, operates at 1.5V, synchronous mode. Ideal for applications requiring high-speed and reliable memory storage in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 10,834 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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AZTECH Wire

Italy . 680 parts In-Stock

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$6.285

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680

$6.285

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the EMD3D256M08G1-150CBS1R by Everspin Technologies. This memory IC offers unparalleled quality and reliability, backed by the trusted name of its manufacturer. Ideal for a wide range of applications, this product provides customers with unmatched value and benefits. Experience seamless performance and superior functionality with the EMD3D256M08G1-150CBS1R, setting a new standard in memory circuit innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Surface Mount: YES

Allows for easy installation and saves space on the circuit board.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer and efficient performance.

Nominal Supply Voltage / Vsup (V): 1.5

The nominal supply voltage ensures stable and reliable operation.

No. of Terminals: 78

Sufficient number of terminals for connectivity and functionality.

Maximum Operating Temperature: 85 °C

Can operate effectively within a wide range of temperatures.

Memory Width: 8

Provides a high memory width for storing large amounts of data.

Technology: CMOS

CMOS technology offers low power consumption and high performance.

No. of Words: 33554432 words

Large number of words for storing extensive data.

Memory IC Type: MEMORY CIRCUIT

Specifically designed for memory circuit applications, ensuring optimal performance.

Technical Specifications

Other Function Memory ICs EMD3D256M08G1-150CBS1R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PBGA-B78

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

78

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

1.575 V

Minimum Supply Voltage (Vsup):

1.425 V

Nominal Supply Voltage / Vsup (V):

1.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

EMD3D256M08G1-150CBS1R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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