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M36DR432AD10ZA6T

STMicroelectronics

M36DR432AD10ZA6T by STMicroelectronics

M36DR432AD10ZA6T by STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M words of mixed FLASH+SRAM with a supply voltage range of 1.65-2.2V. It operates in extreme temperatures from -40 °C to 85 °C and supports surface mount applications. Ideal for industrial use, it offers fast access times up to 100 ns and minimal standby current.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 3,659 parts In-Stock

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Digiode

USA . 2,094 parts In-Stock

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Anansix

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ECAB

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IDEA Electronic Components Group

UK . 1,650 parts In-Stock

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$4.491

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$4.042

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$4.491

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AZTECH Wire

Italy . 913 parts In-Stock

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$8.010

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MKK Technologies

India . 1,086 parts In-Stock

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DigiPath Technology Company

USA . 1,086 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,996 parts In-Stock

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Metaverse IC Inc.

Canada . 10,360 parts In-Stock

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Assy Fe

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Kepictronics

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A-Z Elektronik GmbH

Germany . 5,318 parts In-Stock

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Microchip USA

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Alle Elektronik GmbH

Germany . 3,545 parts In-Stock

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Authorized Procurement Solutions

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Parana Technologies

USA . 2,281 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Unlock the potential of your designs with the M36DR432AD10ZA6T from STMicroelectronics, a leader in innovative memory solutions. This versatile FLASH+SRAM memory IC is engineered for reliability and performance, making it perfect for industrial applications where durability matters. With low power consumption and a compact design, it seamlessly integrates into your systems, optimizing efficiency while ensuring robust data handling. Elevate your projects with ST’s excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection against environmental factors, making it suitable for industrial applications.

Surface Mount: YES

Surface mount technology facilitates compact circuit designs, allowing for higher device density and saving board space.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, making it easier to integrate into various designs.

Operating Mode: ASYNCHRONOUS

An asynchronous operating mode enables faster data access without the need for synchronized clock signals, optimizing performance.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM memory types provides a flexible balance of speed and non-volatility, suitable for various applications.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low nominal supply voltage enhances energy efficiency, making it effective in battery-powered devices.

Power Supplies: 1.8/2 V

Dual power supply options allow for adaptability in different electronic environments, ensuring compatibility with various designs.

No. of Terminals: 66

With 66 terminals, this IC offers ample connectivity for versatile applications, enabling complex designs and functionalities.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

A fine pitch grid array package style ensures a compact design that minimizes layout and routing challenges on PCBs.

Maximum Operating Temperature: 85 °C

An operating temperature of up to 85 °C supports reliability in various industrial environments where heat can be a concern.

Organization: 2MX16

The organization of 2MX16 provides a significant amount of structured memory access, allowing efficient data retrieval.

Minimum Operating Temperature: -40 °C

With a minimum operational temperature of -40 °C, this memory IC is suitable for extreme environments, ensuring reliable performance.

Terminal Finish: TIN LEAD

The tin-lead terminal finish enhances solderability and reliability in connections, which is crucial for long-term functionality.

Terminal Position: BOTTOM

Bottom terminal positioning provides a compact footprint and makes it easier for fitting into smaller electronic assemblies.

Maximum Seated Height: 1.4 mm

A low maximum seated height allows for a sleek design, minimizing overall device height without compromising functionality.

Width: 8 mm

A width of 8 mm balances size and performance, permitting integration into various applications without taking up excessive space.

Minimum Supply Voltage (Vsup): 1.65 V

The minimum supply voltage of 1.65 V extends compatibility with modern low-power electronics.

Length: 12 mm

At a length of 12 mm, this IC's compact dimensions maintain design flexibility while maximizing performance capabilities.

Temperature Grade: INDUSTRIAL

An industrial temperature grade ensures reliability and performance in demanding environments typically encountered in industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall efficiency and reliability.

Terminal Form: BALL

Ball terminal form facilitates easy soldering and ensures a secure connection, which is essential for high-density applications.

Maximum Supply Current: 26 mA

With a maximum supply current of 26 mA, this IC balances power consumption and performance, making it efficient for use in various devices.

No. of Words: 2097152 words

Providing over 2 million words of storage capacity, this memory IC is perfect for applications requiring significant data storage.

Memory Width: 16

A memory width of 16 bits enables efficient data handling and processing for a wide range of applications.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for higher connection density without compromising reliability.

No. of Words Code: 2M

The capability of storing 2 million words makes this memory IC suitable for applications needing a substantial memory footprint.

Maximum Supply Voltage (Vsup): 2.2 V

An upper supply voltage limit of 2.2 V allows for additional operational flexibility across different applications and design requirements.

Memory Density: 33554432 bit

The high memory density of 33,554,432 bits ensures ample storage, accommodating complex and data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, this IC enhances overall system performance by efficiently handling data storage and retrieval tasks.

Maximum Standby Current: 0.00001 Amp

An ultra-low maximum standby current minimizes power consumption in idle states, contributing to energy efficiency.

Maximum Access Time: 100 ns

With a maximum access time of 100 ns, this IC provides quick data access for improved system performance in critical applications.

Technical Specifications

Other Function Memory ICs M36DR432AD10ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

SRAM IS ORGANIZED AS 256K X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

26 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR432AD10ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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