Loading...

M36D0R6040B0ZAI

STMicroelectronics

M36D0R6040B0ZAI by STMicroelectronics

M36D0R6040B0ZAI by STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM in a compact 67-terminal grid array package. Ideal for applications requiring efficient data storage with low power consumption, it operates b/w -30 °C to 85 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,096 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,096

-

-

-

-

Anansix

USA . 2,329 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,329

-

-

-

-

Vyrian

USA . 2,087 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,087

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 581 parts In-Stock

1+ parts

$2.858

100+ parts

-

1k+ parts

$2.573

10k+ parts

-

581

$2.858

-

$2.573

-

MKK Technologies

India . 827 parts In-Stock

1+ parts

$5.375

100+ parts

-

1k+ parts

-

10k+ parts

-

827

$5.375

-

-

-

DigiPath Technology Company

USA . 827 parts In-Stock

1+ parts

$5.375

100+ parts

-

1k+ parts

-

10k+ parts

-

827

$5.375

-

-

-

Corphita

USA . 4,276 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,276

-

-

-

-

Parana Technologies

USA . 499 parts In-Stock

1+ parts

-

100+ parts

$3.418

1k+ parts

-

10k+ parts

-

499

-

$3.418

-

-

Overview

Unlock unparalleled performance with the M36D0R6040B0ZAI from STMicroelectronics. This versatile memory IC seamlessly combines FLASH and PSRAM technologies, ensuring rapid data access while maintaining low power consumption—perfect for a wide range of applications from consumer electronics to automotive systems. With STMicroelectronics' commitment to quality and innovation, you can trust this product to enhance your designs and drive your success, offering reliability and efficiency in every byte.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing plastic and epoxy materials ensures durability and reliability, making the IC suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design, which is ideal for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout and routing on circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in data processing and enhances performance in various scenarios.

Mixed Memory Type: FLASH+PSRAM

The combination of Flash and PSRAM provides a balance of high-speed data access and efficient storage capabilities.

Nominal Supply Voltage / Vsup: 1.8V

Operating at a low voltage improves energy efficiency and supports battery-operated devices.

Power Supplies (V): 1.8

A stable power supply requirement enables reliable performance across various operating conditions.

No. of Terminals: 67

A higher number of terminals facilitates greater connectivity options and versatility in designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch of the grid array design enable higher density mounting on PCBs.

Maximum Operating Temperature: 85 °C

Withstand higher temperatures, ensuring reliability in demanding environments.

Organization: 4MX16

The memory organization optimizes data storage and retrieval, enhancing efficiency in applications.

Minimum Operating Temperature: -30 °C

Suitable for use in colder environments, expanding application versatility.

Terminal Finish: TIN LEAD

Tin-lead finishes improve solderability and longevity in electronic assemblies.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient layout and connection to circuit boards.

Maximum Seated Height: 1.2 mm

A low seated height reduces overall profile height of the device, enhancing design flexibility.

Width: 8 mm

Compact width makes it easier to fit into tight spaces in electronic designs.

Minimum Supply Voltage (Vsup): 1.7V

Supports a wider range of supply voltages, making it adaptable to various systems.

Length: 12 mm

Compact length contributes to reduced PCB real estate, efficient for modern designs.

Technology: CMOS

CMOS technology provides low power consumption, making it an energy-efficient choice.

Terminal Form: BALL

Ball terminal form factor facilitates reliable soldering and connection to PCBs.

Maximum Supply Current: 26 mA

Moderate current draw ensures efficient operation while providing sufficient performance.

No. of Words: 4194304 words

A substantial number of words allows for versatile memory configurations.

Memory Width: 16

16-bit memory width enhances data processing capabilities, suitable for various applications.

Terminal Pitch: 0.8 mm

Narrow terminal pitch allows for denser layouts, essential for advanced electronic designs.

No. of Words Code: 4M

The 4M words code provides ample storage space for a variety of applications.

Maximum Supply Voltage (Vsup): 1.95V

Allows some overhead for supply stability, ensuring reliability in operation.

Memory Density: 67108864 bit

High memory density offers significant storage capability for complex applications.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, it serves its purpose effectively for data storage.

Maximum Standby Current: 0.00011 Amp

Ultra-low standby current enhances overall energy efficiency when the device is idle.

Maximum Access Time: 70 ns

Fast access time allows for quick data retrieval, improving system responsiveness.

Technical Specifications

Other Function Memory ICs M36D0R6040B0ZAI attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B67

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

67

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA67,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

26 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36D0R6040B0ZAI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20