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M36DR232B120ZA6T

STMicroelectronics

M36DR232B120ZA6T by STMicroelectronics

M36DR232B120ZA6T from STMicroelectronics is a low-profile, asynchronous memory IC featuring a mixed FLASH+SRAM design with 2M words and 16-bit width. It operates b/w -40 °C to 85°C, powered by 1.8-2.2V. Ideal for industrial applications requiring compact memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,428 parts In-Stock

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Digiode

USA . 1,223 parts In-Stock

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1,223

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Vyrian

USA . 189 parts In-Stock

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189

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,269 parts In-Stock

1+ parts

$1.891

100+ parts

-

1k+ parts

$1.702

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2,269

$1.891

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$1.702

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MKK Technologies

India . 1,851 parts In-Stock

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$3.555

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$3.555

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DigiPath Technology Company

USA . 1,851 parts In-Stock

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$3.555

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1,851

$3.555

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Corphita

USA . 2,981 parts In-Stock

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2,981

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Parana Technologies

USA . 218 parts In-Stock

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$2.260

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$2.260

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Overview

Unlock unparalleled performance with the M36DR232B120ZA6T from STMicroelectronics, a leader in innovative memory solutions. This advanced memory IC blends Flash and SRAM technology, offering exceptional data reliability across diverse applications, from industrial automation to automotive systems. With its robust design and low power consumption, you gain efficiency without compromising on speed or quality. Elevate your projects with this versatile, high-performance memory solution that stands the test of time!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides protection against environmental factors, making it suitable for industrial applications.

Surface Mount: YES

Surface-mount technology enables a compact design and simplifies assembly, leading to reduced space requirements on circuit boards.

Package Shape: RECTANGULAR

The rectangular shape provides an efficient layout, optimizing the space on the PCB for other components.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for more flexible timing control and can improve performance in specific applications where immediate access is required.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM provides both non-volatile and volatile storage options, making it versatile for various applications.

Power Supplies (V): 1.8/2

Dual power supply options allow for efficient energy management and compatibility with modern low-power designs.

No. of Terminals: 66

A higher number of terminals supports more connections for data and power, enhancing functionality and performance.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch design enables high-density mounting, which saves space and improves thermal performance.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliability in a wide range of operating conditions, especially in industrial environments.

Organization: 2MX16

The memory organization allows for efficient data management and retrieval, which is crucial for performance in memory-intensive applications.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures the IC functions well in extreme environments, making it suitable for rugged applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and enhances long-term reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal positioning can provide shorter connection paths, improving electrical performance.

Maximum Seated Height: 1.4 mm

A low seated height allows for thin profiles in device designs, which is beneficial for portable and space-constrained applications.

Width: 8 mm

A compact width aids in saving space on the PCB, allowing for a more efficient design in battery-powered and portable electronics.

Minimum Supply Voltage (Vsup): 1.65 V

Lower minimum supply voltage enhances energy efficiency and extends battery life in portable devices.

Length: 12 mm

This length provides a balanced size for integration into various electronic devices while maintaining performance.

Temperature Grade: INDUSTRIAL

An industrial temperature grade ensures reliability in harsh conditions, making this product suitable for various industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, crucial for modern electronic devices.

Terminal Form: BALL

Ball terminal form provides a reliable connection and facilitates efficient soldering, enhancing assembly efficiency.

Maximum Supply Current: 40 mA

A maximum supply current of 40 mA indicates low power consumption, which is appropriate for battery-operated devices.

No. of Words: 2097152 words

With over 2 million words of storage capacity, this IC can handle large data sets, suitable for comprehensive applications.

Memory Width: 16

A memory width of 16 bits enhances data throughput, conducive for performance-sensitive applications.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for compact layouts while still ensuring reliable soldering and connection.

No. of Words Code: 2M

A coding of 2M words confirms high capacity, making this memory IC suitable for data-intensive applications.

Maximum Supply Voltage (Vsup): 2.2 V

The maximum supply voltage of 2.2 V fits well into low-power systems, essential for energy-efficient designs.

Memory Density: 33554432 bit

High memory density enables extensive data storage capability, ideal for complex applications requiring significant data processing.

Memory IC Type: MEMORY CIRCUIT

Classifying it as a memory circuit highlights its essential function in storing and retrieving data for various applications.

Maximum Standby Current: 0.000025 Amp

Very low standby current ensures minimal power consumption when not in use, extending battery life in portable devices.

Maximum Access Time: 120 ns

Fast access time of 120 ns enables quick data retrieval, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36DR232B120ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232B120ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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