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M36DR232A120ZA6C

STMicroelectronics

M36DR232A120ZA6C by STMicroelectronics

M36DR232A120ZA6C from STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M x 16 organization with mixed FLASH+SRAM technology. It operates b/w -40 °C to 85°C and supports supply voltages of 1.8V to 2.2V. Ideal for industrial applications, it offers fast access times of up to 120 ns.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 3,359 parts In-Stock

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3,359

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Vyrian

USA . 3,327 parts In-Stock

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Anansix

USA . 701 parts In-Stock

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701

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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500

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IDEA Electronic Components Group

UK . 172 parts In-Stock

1+ parts

$2.740

100+ parts

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$2.466

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172

$2.740

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$2.466

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MKK Technologies

India . 555 parts In-Stock

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$5.152

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555

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DigiPath Technology Company

USA . 555 parts In-Stock

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$5.152

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555

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Parana Technologies

USA . 1,771 parts In-Stock

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$3.276

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Corphita

USA . 1,613 parts In-Stock

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Metaverse IC Inc.

Canada . 634 parts In-Stock

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Overview

Unlock the potential of your designs with the M36DR232A120ZA6C from STMicroelectronics—a leader in innovative memory solutions. This versatile flash and SRAM mixed memory IC offers exceptional reliability and performance, perfect for industrial applications. With a compact low-profile package and robust temperature range, it ensures efficiency in even the most demanding environments. Elevate your projects with unmatched quality that only ST can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, offering effective protection and thermal management.

Surface Mount: YES

Facilitates compact circuit designs and automated assembly, improving manufacturability.

Package Shape: RECTANGULAR

Allows efficient space utilization on PCB layouts.

Operating Mode: ASYNCHRONOUS

Enables quicker response times, enhancing performance in real-time applications.

Mixed Memory Type: FLASH+SRAM

Combines the benefits of non-volatile storage and fast access, improving overall efficiency.

Power Supplies (V): 1.8/2

Low power requirements make it suitable for battery-operated devices, optimizing energy usage.

No. of Terminals: 66

Provides ample connections for versatile applications, supporting complex designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Compact form factor reduces PCB footprint, enabling smaller device designs.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications with high-temperature environments.

Organization: 2MX16

Efficient data organization promotes optimized performance for various applications.

Minimum Operating Temperature: -40 °C

Allows operation in extreme conditions, ensuring reliability in harsh environments.

Terminal Finish: TIN LEAD

Provides excellent solderability and durability, enhancing assembly reliability.

Terminal Position: BOTTOM

Facilitates effective heat dissipation, improving thermal management in applications.

Maximum Seated Height: 1.4 mm

Low profile design allows for space-constrained applications and improved airflow.

Width: 8 mm

Compact width suitable for tight spaces, ensuring compatibility in various setups.

Minimum Supply Voltage (Vsup): 1.65 V

Flexibility in power requirements supports a wider range of applications.

Length: 12 mm

Compact length enhances compatibility with high-density designs.

Temperature Grade: INDUSTRIAL

Designed for durability and reliability in industrial settings, ensuring long-life performance.

Technology: CMOS

Low power consumption and high performance, ideal for modern applications.

Terminal Form: BALL

Provides robust mechanical connections with enhanced electrical performance.

Maximum Supply Current: 40 mA

Efficient power usage enables longer battery life in portable applications.

No. of Words: 2097152 words

Extensive memory capacity caters to demanding applications requiring large data storage.

Memory Width: 16

Supports efficient data processing and aligns with modern interface requirements.

Terminal Pitch: 0.8 mm

Fine pitch allows for high-density connections, benefiting space-limited designs.

No. of Words Code: 2M

Adequate code storage for various embedded applications, enhancing functionality.

Maximum Supply Voltage (Vsup): 2.2 V

Wide supply voltage range offers flexibility for different operating conditions.

Memory Density: 33554432 bit

High memory density supports complex applications requiring significant data processing.

Memory IC Type: MEMORY CIRCUIT

Robust design optimized for data storage and retrieval operations.

Maximum Standby Current: 0.000025 Amp

Extremely low standby current enhances energy efficiency and prolongs battery life.

Maximum Access Time: 120 ns

Fast access time ensures quick data retrieval, crucial for high-performance applications.

Technical Specifications

Other Function Memory ICs M36DR232A120ZA6C attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232A120ZA6C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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