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M36D0R6040T0ZAIE

STMicroelectronics

M36D0R6040T0ZAIE by STMicroelectronics

M36D0R6040T0ZAIE from STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM technologies for efficient data storage. Ideal for applications requiring compact, high-density memory solutions in thin-profile designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,151 parts In-Stock

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2,151

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Vyrian

USA . 2,090 parts In-Stock

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2,090

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Anansix

USA . 787 parts In-Stock

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787

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 454 parts In-Stock

1+ parts

$2.609

100+ parts

-

1k+ parts

$2.348

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454

$2.609

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$2.348

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MKK Technologies

India . 1,059 parts In-Stock

1+ parts

$4.906

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1,059

$4.906

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DigiPath Technology Company

USA . 1,059 parts In-Stock

1+ parts

$4.906

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1,059

$4.906

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Parana Technologies

USA . 1,620 parts In-Stock

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$3.120

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1,620

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$3.120

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Corphita

USA . 242 parts In-Stock

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242

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Overview

Unlock the future of memory solutions with the M36D0R6040T0ZAIE from STMicroelectronics. Designed for excellence, this advanced FLASH+PSRAM hybrid memory IC delivers exceptional performance in demanding applications, all while ensuring reliability and efficiency. With its compact design and low power consumption, it’s perfect for cutting-edge devices that require seamless data processing. Trust in STMicroelectronics' reputation for innovation and quality to elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensures protection against environmental factors, enhancing the reliability of the Memory IC.

Surface Mount: YES

Facilitates easier and more efficient PCB assembly, saving space and lowering production costs.

Package Shape: RECTANGULAR

Rectangular shape optimizes layout on the PCB, allowing better integration with other components.

Operating Mode: ASYNCHRONOUS

Allows for faster access to data by eliminating the need for a clock signal, improving overall performance.

Mixed Memory Type: FLASH+PSRAM

Combines the advantages of both FLASH and PSRAM, providing versatile memory solutions for various applications.

Nominal Supply Voltage / Vsup (V): 1.8

Lower voltage operation reduces power consumption, making it suitable for battery-powered devices.

Power Supplies (V): 1.8

Utilizing a single supply voltage simplifies the design and reduces the number of required components.

No. of Terminals: 67

A higher number of terminals allows for more data lines and control signals, enhancing connectivity and functionality.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Thin profile and fine pitch layout enhance performance by minimizing interference and enabling high-density designs.

Maximum Operating Temperature: 85 °C

High temperature tolerance makes this product suitable for various applications, including industrial and automotive.

Organization: 4MX16

Supports efficient data storage organization, allowing for quick access and manipulation of data in applications.

Minimum Operating Temperature: -30 °C

Wide operating temperature range ensures reliability in extreme operating environments.

Terminal Finish: TIN SILVER COPPER

Quality terminal finish promotes excellent conductivity and resistance to oxidation, ensuring long-term performance.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient surface mounting, saving space on the PCB.

Maximum Seated Height: 1.2 mm

Low profile design ensures compatibility with compact electronic devices, optimizing available space.

Width: 8 mm

Compact width allows for integration into space-constrained applications while maintaining functionality.

Minimum Supply Voltage (Vsup): 1.7 V

Flexibility in voltage requirements adds to the versatility of the product in different applications.

Length: 12 mm

Short length contributes to a compact form factor, facilitating integration into space-limited designs.

Technology: CMOS

CMOS technology provides low power consumption, high noise immunity, and fast switching capabilities.

Terminal Form: BALL

Ball terminal form enhances electrical performance and reduces inductance compared to conventional pin forms.

Maximum Supply Current: 26 mA

Moderate supply current ensures sufficient power is available for operation while maintaining low power needs.

No. of Words: 4194304 words

Large word count allows for substantial data storage, making it suitable for memory-intensive applications.

Memory Width: 16

16-bit wide memory facilitates high data throughput for applications requiring fast data processing.

Terminal Pitch: 0.8 mm

Narrow terminal pitch supports high-density designs, allowing more connections in a smaller footprint.

No. of Words Code: 4M

The 4M word code indicates ample storage capability, suitable for a wide variety of applications.

Maximum Supply Voltage (Vsup): 1.95 V

Allows for flexibility in power supply options, accommodating various electronic designs.

Memory Density: 67108864 bit

High memory density maximizes data storage capacity, providing more functionality in compact applications.

Memory IC Type: MEMORY CIRCUIT

Designed specifically for memory applications, ensuring optimized performance tailored to data storage needs.

Maximum Standby Current: 0.00011 Amp

Extremely low standby current minimizes power consumption during idle states, enhancing overall energy efficiency.

Maximum Access Time: 70 ns

Fast access time facilitates rapid data retrieval, crucial for high-performance applications.

Technical Specifications

Other Function Memory ICs M36D0R6040T0ZAIE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B67

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

67

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA67,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

26 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36D0R6040T0ZAIE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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