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M36DR232A100ZA6T

STMicroelectronics

M36DR232A100ZA6T by STMicroelectronics

M36DR232A100ZA6T from STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M words of mixed FLASH+SRAM. It operates b/w 1.65V and 2.2V with a max temp of 85 °C, making it ideal for industrial applications requiring reliable data storage. Its compact design ensures efficient space utilization in various electronic devices.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,459 parts In-Stock

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Digiode

USA . 156 parts In-Stock

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156

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Vyrian

USA . 79 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 841 parts In-Stock

1+ parts

$4.930

100+ parts

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$4.437

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841

$4.930

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$4.437

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MKK Technologies

India . 1,767 parts In-Stock

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$9.271

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$9.271

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DigiPath Technology Company

USA . 1,767 parts In-Stock

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$9.271

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$9.271

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Corphita

USA . 1,752 parts In-Stock

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Parana Technologies

USA . 112 parts In-Stock

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$5.895

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112

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$5.895

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Overview

Unlock the potential of your designs with the M36DR232A100ZA6T from STMicroelectronics, a leader in innovative memory solutions. This advanced Flash+SRAM hybrid memory IC offers unmatched reliability and versatility for a wide range of applications, from industrial automation to consumer electronics. With its low-profile design and robust performance across a broad temperature range, it empowers you to create efficient, high-performance systems that stand the test of time. Choose STMicroelectronics for quality that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection against environmental factors, ensuring reliability in various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient assembly, making the product suitable for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient space utilization on printed circuit boards (PCBs), promoting better layout designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access without the need for a clock signal, improving performance for certain applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM memory allows for higher flexibility, making it suitable for a variety of applications requiring fast data access and storage.

Power Supplies (V): 1.8/2

Low operating voltage requirements (1.8/2V) contribute to reduced power consumption, making this product energy-efficient.

No. of Terminals: 66

A higher number of terminals enhances the connectivity options for intricate designs, supporting complex applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array design allows for an efficient thermal management and low-profile height meets the constraints of compact designs.

Maximum Operating Temperature: 85 °C

An operating temperature of up to 85 °C is suitable for industrial applications, providing reliability in harsh conditions.

Organization: 2MX16

The 2MX16 organization yields a significant data structure, facilitating straightforward integration into various systems.

Minimum Operating Temperature: -40 °C

The capability to operate at very low temperatures (-40 °C) ensures functionality in extreme environments, increasing application versatility.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and enhances longevity, ideal for reliable electronic applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for a low-profile design, enabling better heat dissipation and compact PCB layouts.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm aligns well with compact designs, making it an excellent choice for space-constrained applications.

Width: 8 mm

A width of 8 mm is beneficial for fitting into slim devices, ensuring compatibility with modern electronic designs.

Minimum Supply Voltage (Vsup): 1.65 V

Operating at a minimum supply voltage of 1.65V makes this product adaptable to a range of power supply scenarios.

Length: 12 mm

A length of 12 mm is suitable for a variety of applications, maintaining a balance between component size and functionality.

Temperature Grade: INDUSTRIAL

The industrial temperature grade signifies reliability and durability, making it appropriate for tough operational environments.

Technology: CMOS

CMOS technology features low power consumption and high noise immunity, enhancing device performance and efficiency.

Terminal Form: BALL

Ball terminal form supports better electrical performance and heat dissipation compared to traditional lead forms.

Maximum Supply Current: 40 mA

A maximum supply current of 40 mA indicates good performance while remaining energy-efficient, suitable for battery-operated devices.

No. of Words: 2097152 words

The substantial word count ensures enough storage for complex applications, providing flexibility in data handling.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, suitable for high-performance applications.

Terminal Pitch: 0.8 mm

A 0.8 mm pitch enhances the ability to squeeze more pins into a smaller area, which is advantageous for compact designs.

No. of Words Code: 2M

With a 2M words code, this device provides ample capacity for various data-intensive applications.

Maximum Supply Voltage (Vsup): 2.2 V

The maximum supply voltage of 2.2V allows for stable operation while ensuring protection against voltage fluctuations.

Memory Density: 33554432 bit

A high memory density of 33554432 bits provides significant storage capacity for applications requiring large amounts of data.

Memory IC Type: MEMORY CIRCUIT

Identifying as a memory circuit establishes its core function, making it a crucial component in digital systems.

Maximum Standby Current: 0.000025 Amp

An exceptionally low maximum standby current indicates excellent energy efficiency for battery-operated devices.

Maximum Access Time: 100 ns

A maximum access time of 100 ns ensures quick data retrieval, making it suitable for performance-critical applications.

Technical Specifications

Other Function Memory ICs M36DR232A100ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232A100ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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