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M36DR232A120ZA6T

STMicroelectronics

M36DR232A120ZA6T by STMicroelectronics

M36DR232A120ZA6T from STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M words of mixed FLASH+SRAM technology. It operates b/w 1.65V and 2.2V with a max access time of 120ns, suitable for industrial applications. Its compact design ensures efficient space utilization in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,484 parts In-Stock

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3,484

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,078 parts In-Stock

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2,078

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ComSIT Distribution GmbH

Germany . 1,920 parts In-Stock

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1,920

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ACDS - Activité Composants Distribution Service

France . 1,500 parts In-Stock

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1,500

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Vyrian

USA . 990 parts In-Stock

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990

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Anansix

USA . 692 parts In-Stock

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692

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IDEA Electronic Components Group

UK . 1,060 parts In-Stock

1+ parts

$2.834

100+ parts

-

1k+ parts

$2.550

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1,060

$2.834

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$2.550

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MKK Technologies

India . 2,081 parts In-Stock

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$5.328

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2,081

$5.328

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DigiPath Technology Company

USA . 2,081 parts In-Stock

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$5.328

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2,081

$5.328

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Component Stockers USA

USA . 470 parts In-Stock

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$99.990

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470

$99.990

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GreenTree Electronics

Israel . 48,000 parts In-Stock

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48,000

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Kepictronics

USA . 22,540 parts In-Stock

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22,540

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Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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Cyclops Electronics Ltd (Excess)

UK . 3,000 parts In-Stock

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3,000

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Corphita

USA . 2,841 parts In-Stock

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2,841

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Parana Technologies

USA . 479 parts In-Stock

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$3.388

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479

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$3.388

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Overview

Unlock exceptional performance with the M36DR232A120ZA6T from STMicroelectronics, a leader in innovative memory solutions. This versatile FLASH+SRAM device is designed for demanding applications, delivering reliability across extreme temperatures. With its compact size and efficient power consumption, it’s perfect for industrial automation, smart devices, and IoT solutions. Experience superior quality and enhanced functionality that drive your projects forward with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the product reliable for various applications.

Surface Mount: YES

Surface mount technology allows for smaller footprint on PCBs, making it ideal for modern compact electronics.

Package Shape: RECTANGULAR

The rectangular shape maximizes PCB real estate and can be easily integrated into various designs.

Operating Mode: ASYNCHRONOUS

An asynchronous operating mode provides faster access times and simplifies control signals, enhancing overall system performance.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM technologies allows for high-speed data access and efficient storage, making the product versatile for diverse applications.

Power Supplies (V): 1.8/2

Low operating voltage enhances power efficiency, making it suitable for battery-powered devices.

No. of Terminals: 66

A higher number of terminals provides more connectivity options, allowing for complex functions in compact designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style reduces height and supports high-density designs, ideal for space-constrained applications.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature rating ensures reliability in demanding industrial environments.

Organization: 2MX16

The organization of 2Mx16 optimizes data retrieval, ensuring efficient access to stored information.

Minimum Operating Temperature: -40 °C

The ability to function in extreme cold temperatures makes this memory IC suitable for harsh environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish enhances solderability and reliability, ensuring stable connections over time.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates compact designs and efficient space utilization on PCBs.

Maximum Seated Height: 1.4 mm

A low seated profile ensures compatibility with low-profile applications, making it an excellent choice for modern compact electronics.

Width: 8 mm

Compact width allows for design flexibility in high-density applications.

Minimum Supply Voltage (Vsup): 1.65 V

Low minimum supply voltage contributes to energy savings, which is essential for portable devices.

Length: 12 mm

The manageable length offers design flexibility while maintaining performance in space-constrained applications.

Temperature Grade: INDUSTRIAL

Industrial-grade components are designed for reliability under rigorous conditions, ensuring long-term operation.

Technology: CMOS

CMOS technology is known for low power consumption and high noise immunity, making this IC suitable for a variety of applications.

Terminal Form: BALL

Ball terminals enhance the mechanical stability and electrical performance of the IC during operation.

Maximum Supply Current: 40 mA

A maximum supply current of 40 mA is power-efficient, allowing for integration in low-power applications.

No. of Words: 2097152 words

High word count provides substantial storage capacity for data, suitable for complex applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, enabling faster operations.

Terminal Pitch: 0.8 mm

The fine pitch of 0.8 mm is suitable for high-density boards, allowing for compact design layouts.

No. of Words Code: 2M

Having 2M words of memory code allows for a significant amount of data storage, benefitting various applications.

Maximum Supply Voltage (Vsup): 2.2 V

The maximum supply voltage accommodates a range of systems, providing flexibility in power management.

Memory Density: 33554432 bit

High memory density ensures that extensive data can be stored efficiently, making it perfect for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Being categorized as a memory circuit denotes its primary function in data storage, critical for most electronic systems.

Maximum Standby Current: 0.000025 Amp

Extremely low standby current is advantageous for energy-saving applications, particularly in portable devices.

Maximum Access Time: 120 ns

A maximum access time of 120 ns contributes to fast data retrieval speeds, enhancing system performance.

Technical Specifications

Other Function Memory ICs M36DR232A120ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232A120ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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