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M36D0R6040T0ZAIT

STMicroelectronics

M36D0R6040T0ZAIT by STMicroelectronics

M36D0R6040T0ZAIT from STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM technologies for efficient data storage with a max access time of 70 ns. Ideal for applications requiring compact, high-density memory solutions in thin-profile designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 1,766 parts In-Stock

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1,766

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Digiode

USA . 861 parts In-Stock

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861

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Vyrian

USA . 268 parts In-Stock

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268

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,105 parts In-Stock

1+ parts

$2.502

100+ parts

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1k+ parts

$2.252

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2,105

$2.502

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$2.252

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MKK Technologies

India . 1,738 parts In-Stock

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$4.706

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1,738

$4.706

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DigiPath Technology Company

USA . 1,738 parts In-Stock

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$4.706

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1,738

$4.706

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Corphita

USA . 3,402 parts In-Stock

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3,402

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Parana Technologies

USA . 1,118 parts In-Stock

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$2.992

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1,118

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$2.992

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Futuretech Components

Singapore . 276 parts In-Stock

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276

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Overview

Unlock superior performance with the M36D0R6040T0ZAIT from STMicroelectronics, a trusted leader in innovative memory solutions. This versatile Flash+PSRAM memory IC is designed for cutting-edge applications, blending efficiency and reliability. With its compact design and low power consumption, it’s perfect for demanding environments. Elevate your projects with advanced technology that ensures swift data access and unparalleled durability—choose quality that performs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers durability and protection against environmental factors, making this IC reliable for various applications.

Surface Mount: YES

Surface mount capability allows for reduced PCB space and simpler assembly processes, aligning with modern compact design requirements.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient use of space on the PCB, optimizing the layout for better performance.

Operating Mode: ASYNCHRONOUS

Asynchronous operation improves system responsiveness by enabling faster access to data, enhancing overall performance.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM offers the advantages of non-volatile storage with high-speed access, making it ideal for diverse applications.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V ensures energy efficiency while maintaining compatibility with many modern electronic systems.

Power Supplies (V): 1.8

Operating on a 1.8V supply enhances power efficiency, reducing overall system power consumption.

No. of Terminals: 67

A higher number of terminals allows for efficient data handling and connection options, broadening application possibilities.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style supports high-density applications, thus enabling advancements in miniaturized electronic devices.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes this memory IC suitable for a wide range of industrial applications.

Organization: 4MX16

An organized memory structure allows efficient data management and retrieval, critical for high-performance applications.

Minimum Operating Temperature: -30 °C

With operational capability down to -30 °C, the IC is suitable for harsh environment applications without compromising performance.

Terminal Finish: TIN LEAD

The tin-lead finish provides good solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: BOTTOM

Bottom terminal positioning is optimal for effective heat dissipation, enhancing overall device reliability and longevity.

Maximum Seated Height: 1.2 mm

A low seated height allows for compact designs, which is essential for modern space-constrained electronic devices.

Width: 8 mm

A width of 8 mm provides a balance between space efficiency and ability to handle data-rich applications.

Minimum Supply Voltage (Vsup): 1.7 V

The flexibility in supply voltage enhances compatibility with a wider range of devices and power configurations.

Length: 12 mm

A length of 12 mm makes the IC a versatile option for various PCB layouts without compromising on electrical performance.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption coupled with high speed, ideal for battery-operated devices.

Terminal Form: BALL

Ball terminal form gives better thermal and electrical performance, essential for high-speed applications.

Maximum Supply Current: 26 mA

The maximum supply current of 26 mA is efficient for reducing power waste in applications while maintaining performance.

No. of Words: 4194304 words

Having over 4 million words of storage capacity enables handling of large data sets, making this IC suitable for high-demand tasks.

Memory Width: 16

A memory width of 16 bits allows for faster data transfer rates, improving overall system throughput.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch supports high-density packaging, which is crucial in modern miniature electronic devices.

No. of Words Code: 4M

The 4M word code signifies significant data handling capability, essential for applications requiring large storage solutions.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V ensures compatibility with various devices while retaining efficient power usage.

Memory Density: 67108864 bit

With a density of 64 Mbit, this memory IC is capable of supporting data-intensive applications seamlessly.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC is optimized for reliable data storage, crucial in digital applications.

Maximum Standby Current: 0.00011 Amp

A low maximum standby current enhances energy efficiency during idle states, prolonging battery life in portable devices.

Maximum Access Time: 70 ns

A maximum access time of 70 ns contributes to fast data retrieval, improving the speed of operations in high-performance applications.

Technical Specifications

Other Function Memory ICs M36D0R6040T0ZAIT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B67

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

67

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA67,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

26 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36D0R6040T0ZAIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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