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M36DR232A100ZA6

STMicroelectronics

M36DR232A100ZA6 by STMicroelectronics

M36DR232A100ZA6 from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 2M x 16 organization with Flash+SRAM technology. It operates b/w -40 °C to 85°C and supports supply voltages of 1.65V to 2.2V. Ideal for industrial applications, it offers fast access times of up to 100 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,447 parts In-Stock

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2,447

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Vyrian

USA . 1,686 parts In-Stock

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1,686

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Digiode

USA . 1,265 parts In-Stock

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1,265

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ComSIT Distribution GmbH

Germany . 54 parts In-Stock

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54

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 158 parts In-Stock

1+ parts

$3.013

100+ parts

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$2.712

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158

$3.013

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$2.712

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MKK Technologies

India . 527 parts In-Stock

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$5.666

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527

$5.666

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DigiPath Technology Company

USA . 527 parts In-Stock

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$5.666

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527

$5.666

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Parana Technologies

USA . 922 parts In-Stock

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$3.602

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922

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Corphita

USA . 570 parts In-Stock

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Overview

Unlock unparalleled performance with the M36DR232A100ZA6 from STMicroelectronics. Renowned for its exceptional quality, this versatile Flash + SRAM memory solution is designed to thrive in demanding industrial applications, operating seamlessly in extreme temperatures. Its low-profile design ensures efficient space utilization, while asynchronous operation boosts responsiveness. Elevate your projects with reliability and innovation that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material ensures longevity and resistance to environmental factors.

Surface Mount: YES

Surface mounting allows for compact design and efficient utilization of PCB space.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy integration into various electronic designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster response times for real-time applications.

Mixed Memory Type: FLASH+SRAM

Combines the advantages of both flash and SRAM, offering flexibility in memory applications.

Power Supplies (V): 1.8/2

Low power supply requirements enhance energy efficiency in electronic systems.

No. of Terminals: 66

A higher number of terminals enables more connectivity options and enhanced functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Low profile design supports space-constricted applications without sacrificing performance.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments, making it suitable for industrial applications.

Organization: 2MX16

The memory organization supports efficient data storage and retrieval operations.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation in extreme conditions.

Terminal Finish: TIN LEAD

Tin-lead finish provides reliable solder connections for stable performance.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates efficient board layout and manufacturing.

Maximum Seated Height: 1.4 mm

Low seated height allows for slim and compact housing solutions.

Width: 8 mm

Compact width enables integration into space-limited designs.

Minimum Supply Voltage (Vsup): 1.65 V

Operates efficiently at lower voltages, contributing to reduced overall power consumption.

Length: 12 mm

Compact length supports space-efficient design without compromising on performance.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, ensuring durability and reliability in harsh conditions.

Technology: CMOS

CMOS technology offers low power consumption and high compatibility with various systems.

Terminal Form: BALL

Ball terminal form factor enhances solder joint reliability and facilitates chip-on-board assembly.

Maximum Supply Current: 40 mA

Low maximum supply current produces less heat and conserves energy during operation.

No. of Words: 2097152 words

High word count supports extensive data storage capabilities for modern applications.

Memory Width: 16

16-bit memory width allows for efficient data processing and enhances performance.

Terminal Pitch: 0.8 mm

Tight terminal pitch supports high-density application needs, maximizing PCB space efficiency.

No. of Words Code: 2M

2M words code signifies reliable storage capacity for robust applications.

Maximum Supply Voltage (Vsup): 2.2 V

Flexibility in supply voltage supports various application requirements.

Memory Density: 33554432 bit

High memory density allows for large data storage, suitable for complex applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, it fulfills essential data storage and retrieval functions.

Maximum Standby Current: 0.000025 Amp

Minimal standby current reduces power consumption, improving overall energy efficiency.

Maximum Access Time: 100 ns

Fast access time ensures quick data retrieval, enhancing system performance.

Technical Specifications

Other Function Memory ICs M36DR232A100ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232A100ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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