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M36D0R6040B0ZAIT

STMicroelectronics

M36D0R6040B0ZAIT by STMicroelectronics

M36D0R6040B0ZAIT from STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM technologies for efficient data storage. Ideal for applications requiring compact, high-density memory solutions in thin-profile packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,775 parts In-Stock

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2,775

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Vyrian

USA . 2,727 parts In-Stock

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2,727

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Anansix

USA . 2,238 parts In-Stock

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2,238

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 320 parts In-Stock

1+ parts

$3.032

100+ parts

-

1k+ parts

$2.729

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320

$3.032

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$2.729

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MKK Technologies

India . 970 parts In-Stock

1+ parts

$5.702

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970

$5.702

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DigiPath Technology Company

USA . 970 parts In-Stock

1+ parts

$5.702

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970

$5.702

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Corphita

USA . 1,238 parts In-Stock

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1,238

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Parana Technologies

USA . 533 parts In-Stock

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$3.626

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533

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$3.626

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Overview

Elevate your designs with the M36D0R6040B0ZAIT from STMicroelectronics, a leader in innovative memory solutions. This cutting-edge Flash+PSRAM memory IC offers exceptional performance and reliability, perfect for diverse applications like IoT devices, automotive tech, and consumer electronics. With a compact, thin-profile design that ensures efficient space utilization, it delivers robust functionality while optimizing power consumption—empowering your projects to achieve unparalleled efficiency and speed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making the product reliable for various applications.

Surface Mount: YES

Surface mount capability allows for compact design and easy integration into modern electronic assemblies.

Package Shape: RECTANGULAR

A rectangular shape is optimal for efficient space utilization on printed circuit boards (PCBs).

Operating Mode: ASYNCHRONOUS

Asynchronous operation increases flexibility in data processing tasks, beneficial for varied application requirements.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM offers versatility, enabling both non-volatile storage and fast access memory in one IC.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage ensures energy efficiency, making it suitable for battery-operated devices.

Power Supplies (V): 1.8

Consistent power requirements simplify design and integration into low-power systems.

No. of Terminals: 67

A higher number of terminals provides more connectivity options, enhancing circuit design flexibility.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Thin profile with fine pitch is beneficial for high-density applications where space is at a premium.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures allows the IC to function in demanding environments.

Organization: 4MX16

This memory organization supports various data storage structures, catering to a wide range of applications.

Minimum Operating Temperature: -30 °C

Wide operating temperature range ensures reliability in both extreme cold and warm conditions.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures excellent solderability for reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient thermal management and PCB layout optimization.

Maximum Seated Height: 1.2 mm

A low seated height contributes to compact design and improved compatibility with other components.

Width: 8 mm

Compact width aids in space-constrained designs and opens up possibilities for miniaturized electronic products.

Minimum Supply Voltage (Vsup): 1.7 V

Operating at a low minimum supply voltage is ideal for energy-sensitive applications.

Length: 12 mm

Short length assists in fitting the IC into compact configurations without sacrificing performance.

Technology: CMOS

CMOS technology provides low power consumption and high speed, making it suitable for modern applications.

Terminal Form: BALL

Ball terminal form enhances packaging density and provides excellent electrical performance.

Maximum Supply Current: 26 mA

Low maximum supply current denotes energy efficiency, an important factor for battery-powered devices.

No. of Words: 4194304 words

A substantial number of words enhances data storage capacity, useful for data-intensive applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and transmission speeds.

Terminal Pitch: 0.8 mm

Tighter terminal pitch enables higher density design, accommodating more functionality in less space.

No. of Words Code: 4M

The 4M word size indicates a robust data handling capability, suitable for various memory-intensive applications.

Maximum Supply Voltage (Vsup): 1.95 V

A higher maximum supply voltage ensures compatibility with a wide range of electronic circuits.

Memory Density: 67108864 bit

High memory density allows for substantial data storage, perfect for applications like smartphones and IoT devices.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, it is optimized for performance and reliability.

Maximum Standby Current: 0.00011 Amp

Extremely low standby current ensures minimal energy consumption when not in active use.

Maximum Access Time: 70 ns

Fast access time of 70 ns contributes to quicker data retrieval, enhancing the overall system performance.

Technical Specifications

Other Function Memory ICs M36D0R6040B0ZAIT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B67

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

67

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA67,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

26 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36D0R6040B0ZAIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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