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M36DR232B100ZA6C

STMicroelectronics

M36DR232B100ZA6C by STMicroelectronics

M36DR232B100ZA6C by STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 2M words of FLASH+SRAM. It operates b/w 1.65V and 2.2V with a max temp of 85 °C, making it ideal for industrial applications requiring compact memory solutions. Its grid array design ensures efficient surface mounting in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,367 parts In-Stock

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2,367

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Anansix

USA . 1,851 parts In-Stock

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Digiode

USA . 1,658 parts In-Stock

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1,658

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,077 parts In-Stock

1+ parts

$5.473

100+ parts

-

1k+ parts

$4.926

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1,077

$5.473

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$4.926

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MKK Technologies

India . 1,339 parts In-Stock

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$10.292

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$10.292

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DigiPath Technology Company

USA . 1,339 parts In-Stock

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$10.292

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1,339

$10.292

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Parana Technologies

USA . 1,773 parts In-Stock

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$6.544

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1,773

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$6.544

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Corphita

USA . 915 parts In-Stock

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Overview

Unlock the power of innovation with the M36DR232B100ZA6C from STMicroelectronics, a leader in high-quality memory solutions. This versatile FLASH+SRAM memory IC is designed for demanding industrial applications, ensuring reliability under extreme temperatures. With its compact, low-profile design and asynchronous operation, it delivers exceptional performance while saving precious board space. Experience enhanced efficiency and longevity, making your projects smarter and more robust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and offers better thermal stability, making it suitable for a wide range of applications.

Surface Mount: YES

Surface mount compatibility allows for easier assembly and minimizes the footprint on PCBs, making it ideal for modern compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape is standard and allows for efficient layout and integration into various designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in application design, enabling straightforward interfacing with microcontrollers and other logic.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM supports faster access and more extensive data storage, ideal for memory-intensive applications.

Power Supplies (V): 1.8/2

Low voltage operation ensures energy efficiency, making it suitable for battery-operated devices and reducing overall power consumption.

No. of Terminals: 66

A higher number of terminals allows for more complex interfacing, which can enhance the product's functionality and connectivity.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Low profile and fine pitch design promotes compact device assembly and reduces space requirements on the circuit board.

Maximum Operating Temperature: 85 °C

The ability to operate at higher temperatures increases reliability in industrial settings and harsh environments.

Organization: 2MX16

This organization facilitates efficient data access and structure, enhancing performance for various applications.

Minimum Operating Temperature: -40 °C

Wide temperature operating range allows for usage in extreme environments, making it suitable for industrial and automotive applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers better solderability and reliability in connections, ensuring stable performance in applications.

Terminal Position: BOTTOM

Bottom terminal positioning can aid in better thermal management and improved electrical performance.

Maximum Seated Height: 1.4 mm

Low seated height allows for compatibility with compact designs and space-constrained applications.

Width: 8 mm

Compact width contributes to space-saving in PCB layout, ideal for miniaturized electronics.

Minimum Supply Voltage (Vsup): 1.65 V

Low minimum supply voltage further enhances energy efficiency, making it excellent for energy-sensitive designs.

Length: 12 mm

The small length makes it suitable for devices requiring a minimal footprint without compromising functionality.

Temperature Grade: INDUSTRIAL

Industrial-grade classification ensures reliability and durability in harsh operational conditions, ideal for industrial applications.

Technology: CMOS

CMOS technology provides low power consumption and high performance, making it suitable for modern electronic devices.

Terminal Form: BALL

Ball terminal form allows for efficient heat dissipation and improved electrical performance.

Maximum Supply Current: 40 mA

Moderate supply current allows for effective performance without excessive power drain.

No. of Words: 2097152 words

High word count supports extensive data storage, making it ideal for applications requiring large memory capacity.

Memory Width: 16

Memory width of 16 bits improves data throughput, enhancing overall performance and efficiency.

Terminal Pitch: 0.8 mm

Standard terminal pitch supports common PCB designs and ensures compatibility with a variety of components.

No. of Words Code: 2M

Having 2M words ensures ample storage capacity, suitable for applications involving large data sets.

Maximum Supply Voltage (Vsup): 2.2 V

Allows for flexibility in design by accommodating multiple supply voltages while ensuring operational integrity.

Memory Density: 33554432 bit

High memory density indicates extensive storage ability in a compact form factor, enhancing the product's usability.

Memory IC Type: MEMORY CIRCUIT

Being classified as a memory circuit emphasizes its capability for memory storage applications across various devices.

Maximum Standby Current: 0.000025 Amp

Very low standby current enhances energy efficiency, making it an excellent choice for power-sensitive applications.

Maximum Access Time: 100 ns

Fast access time ensures rapid data retrieval, making it suitable for high-performance applications.

Technical Specifications

Other Function Memory ICs M36DR232B100ZA6C attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232B100ZA6C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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