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M36DR232A120ZA6

STMicroelectronics

M36DR232A120ZA6 by STMicroelectronics

M36DR232A120ZA6 from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 2M words of FLASH+SRAM. It operates b/w -40 °C to 85°C with a supply voltage range of 1.65V to 2.2V and boasts a max access time of 120 ns, ideal for industrial applications. Its compact design (8mm x 12mm) ensures efficient space utilization in electronic devices.

Median Price

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3

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1k+

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Vyrian

USA . 4,711 parts In-Stock

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Anansix

USA . 1,768 parts In-Stock

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Digiode

USA . 999 parts In-Stock

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IDEA Electronic Components Group

UK . 1,927 parts In-Stock

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$4.731

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$4.258

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MKK Technologies

India . 476 parts In-Stock

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$8.896

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DigiPath Technology Company

USA . 476 parts In-Stock

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$8.896

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Corphita

USA . 2,402 parts In-Stock

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Parana Technologies

USA . 1,855 parts In-Stock

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$5.656

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Overview

Unlock the future of memory solutions with the M36DR232A120ZA6 from STMicroelectronics. Renowned for their innovative technology, STMicroelectronics delivers unmatched reliability and performance in this Flash+SRAM memory IC. Perfect for industrial applications, this versatile component ensures seamless operation even in extreme conditions. Experience enhanced efficiency, reduced power consumption, and a compact design that elevates your projects while benefiting from ST's trusted quality and expertise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the memory IC suitable for various applications.

Surface Mount: YES

Surface mount capabilities allow for efficient use of PCB space, facilitating compact designs and reducing overall product size.

Package Shape: RECTANGULAR

A rectangular shape provides a standard footprint that is compatible with a variety of circuit board layouts, ensuring flexibility in design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for quicker access to data since operations aren't tied to a clock cycle, enhancing system responsiveness.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers the benefits of non-volatile memory alongside fast access times, suitable for diverse application needs.

Power Supplies (V): 1.8/2

Low power supply requirements enhance energy efficiency, making this memory IC ideal for battery-powered devices.

No. of Terminals: 66

A higher number of terminals allows for more data inputs/outputs, increasing versatility in connectivity options for complex applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style supports high-density mounting, suitable for modern electronics where space is at a premium.

Maximum Operating Temperature: 85 °C

Operating at higher temperatures ensures reliability in industrial and harsh environment applications.

Organization: 2MX16

This organization supports 2 megawords of data, suitable for applications requiring a considerable amount of memory.

Minimum Operating Temperature: -40 °C

This wide temperature range guarantees reliable performance in extreme conditions, appealing to industrial users.

Terminal Finish: TIN LEAD

Tin-lead finishing offers good solderability and corrosion resistance, providing reliable connections over time.

Terminal Position: BOTTOM

Bottom terminal positioning allows for a more compact design and better thermal performance in high-density applications.

Maximum Seated Height: 1.4 mm

A low profile reduces the overall height of devices, making it suitable for slim product designs.

Width: 8 mm

Compact width supports space-saving designs, suitable for modern electronics where dimensions are critical.

Minimum Supply Voltage (Vsup): 1.65 V

Low minimum supply voltage enhances compatibility with low-power operations, making it ideal for battery-operated devices.

Length: 12 mm

The length contributes to a compact form factor, which is desired in space-constrained applications.

Temperature Grade: INDUSTRIAL

Designed for industrial use, ensuring dependable operation in demanding environments.

Technology: CMOS

CMOS technology provides high-speed processing and low power consumption, ideal for power-sensitive applications.

Terminal Form: BALL

Ball terminal form allows for reliable connections in high-density packaging, improving assembly yield.

Maximum Supply Current: 40 mA

Higher current handling capabilities allow this memory IC to perform well under load, suited for demanding applications.

No. of Words: 2097152 words

With over 2 million words, this memory IC provides substantial storage for applications needing significant data capacity.

Memory Width: 16

A 16-bit wide memory interface enhances data throughput, making it suitable for high-performance applications.

Terminal Pitch: 0.8 mm

Narrow terminal pitch enables higher packing density on PCBs, supporting more compact design layouts.

No. of Words Code: 2M

The capacity of 2M words caters to various applications, ensuring sufficient memory resource for diverse tasks.

Maximum Supply Voltage (Vsup): 2.2 V

A maximum supply voltage of 2.2V ensures compatibility with multiple power configurations, enhancing design flexibility.

Memory Density: 33554432 bit

With a high memory density, this IC is capable of storing large amounts of data, making it ideal for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC excels in data retention and quick access, reinforcing its role in a variety of electronic devices.

Maximum Standby Current: 0.000025 Amp

Very low standby current enhances energy efficiency, making this IC suitable for low-power applications and battery extensions.

Maximum Access Time: 120 ns

A maximum access time of 120 ns ensures quick data retrieval, enhancing the overall system performance.

Technical Specifications

Other Function Memory ICs M36DR232A120ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232A120ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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