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M36DR232B100ZA6T

STMicroelectronics

M36DR232B100ZA6T by STMicroelectronics

M36DR232B100ZA6T from STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M words of mixed FLASH+SRAM. It operates b/w -40 °C to 85°C with a supply voltage of 1.8/2.2V and offers a max access time of 100ns, ideal for industrial applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,597 parts In-Stock

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Digiode

USA . 1,125 parts In-Stock

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Anansix

USA . 573 parts In-Stock

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573

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IDEA Electronic Components Group

UK . 1,077 parts In-Stock

1+ parts

$2.959

100+ parts

-

1k+ parts

$2.663

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1,077

$2.959

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$2.663

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MKK Technologies

India . 564 parts In-Stock

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$5.564

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DigiPath Technology Company

USA . 564 parts In-Stock

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$5.564

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Corphita

USA . 3,310 parts In-Stock

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Parana Technologies

USA . 498 parts In-Stock

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$3.538

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Overview

Unlock exceptional performance with the M36DR232B100ZA6T from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This versatile memory IC combines FLASH and SRAM technologies to deliver reliability and efficiency for a wide array of industrial applications. With its low power consumption and robust design, you gain unmatched value, ensuring your devices operate seamlessly even in the toughest conditions. Elevate your projects with quality you can depend on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material enhances the reliability and longevity of the memory IC, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easier integration into modern circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout in designs, optimizing board real estate.

Operating Mode: ASYNCHRONOUS

Asynchronous operation ensures smooth data handling without needing a clock signal, improving performance in certain applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM allows for flexible storage solutions, offering both fast access times and persistent storage capabilities.

Power Supplies (V): 1.8/2

Dual voltage supply options (1.8V and 2V) enable compatibility with a wider range of systems and energy-efficient designs.

No. of Terminals: 66

A higher terminal count allows for more data lines, enhancing the data throughput and functionality of the memory IC.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array and low-profile design support high-density applications, making it suitable for compact electronic devices.

Maximum Operating Temperature: 85 °C

An operating temperature of 85 °C ensures stability and performance in challenging environmental conditions, ideal for industrial applications.

Organization: 2MX16

The organization provides a configuration that balances memory capacity and access efficiency, making it versatile for various data tasks.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C is crucial for applications in extreme climates, enhancing its reliability in harsh environments.

Terminal Finish: TIN LEAD

Tin-lead finish offers better solderability and corrosion resistance, ensuring strong and reliable connections in assemblies.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient thermal dissipation and better soldering to the PCB.

Maximum Seated Height: 1.4 mm

A low seated height contributes to compact designs, making it suitable for slim devices and limited spaces.

Width: 8 mm

Narrow width is advantageous for tight layout constraints, enabling efficient design in space-constrained applications.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage enhances power-saving capabilities, making it an eco-friendly choice for modern electronics.

Length: 12 mm

The overall length is optimized for fitting into a variety of electronic devices without compromising performance.

Temperature Grade: INDUSTRIAL

Industrial temperature grading assures high endurance and reliability in demanding applications, suitable for industrial devices.

Technology: CMOS

CMOS technology provides low power consumption and high integration capabilities, ideal for sophisticated applications.

Terminal Form: BALL

Ball terminal form improves mechanical resilience and ensures reliable connections in surface-mount applications.

Maximum Supply Current: 40 mA

A moderate maximum supply current offers a balance between performance and power efficiency, suitable for various uses.

No. of Words: 2097152 words

The substantial number of words enables large data storage and versatile applications, catering to demanding data needs.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, making it suitable for both consumer and industrial applications.

Terminal Pitch: 0.8 mm

The fine terminal pitch supports high-density designs, making this memory IC well-suited for modern, compact PCB layouts.

No. of Words Code: 2M

The 2M word code indicates a substantial memory capacity, fulfilling a diverse range of application requirements.

Maximum Supply Voltage (Vsup): 2.2 V

The maximum supply voltage ensures compatibility with various systems while maintaining robust performance levels.

Memory Density: 33554432 bit

High memory density allows extensive data storage in compact designs, making it an excellent choice for advanced electronics.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, it serves fundamental roles in data retention and processing across different electronic devices.

Maximum Standby Current: 0.000025 Amp

Low standby current improves overall energy efficiency, a valuable feature for battery-powered devices.

Maximum Access Time: 100 ns

Fast access time optimizes data retrieval speeds, enhancing the performance of applications requiring rapid data processing.

Technical Specifications

Other Function Memory ICs M36DR232B100ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232B100ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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