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M36DR232B100ZA6

STMicroelectronics

M36DR232B100ZA6 by STMicroelectronics

M36DR232B100ZA6 from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 2M words of FLASH+SRAM. It operates b/w -40 °C to 85°C with a supply voltage range of 1.65V to 2.2V and offers a max access time of 100 ns, ideal for industrial applications. Its compact design (8mm x 12mm) ensures efficient space utilization in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,665 parts In-Stock

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1,665

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Vyrian

USA . 1,263 parts In-Stock

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1,263

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Digiode

USA . 1,227 parts In-Stock

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1,227

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 711 parts In-Stock

1+ parts

$4.912

100+ parts

-

1k+ parts

$4.421

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711

$4.912

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$4.421

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MKK Technologies

India . 2,159 parts In-Stock

1+ parts

$9.236

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2,159

$9.236

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DigiPath Technology Company

USA . 2,159 parts In-Stock

1+ parts

$9.236

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2,159

$9.236

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Corphita

USA . 4,798 parts In-Stock

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4,798

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Parana Technologies

USA . 160 parts In-Stock

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$5.873

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160

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$5.873

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Overview

Experience unparalleled performance with the M36DR232B100ZA6 from STMicroelectronics, a leader in innovative memory solutions. This advanced Flash + SRAM memory IC is designed for efficiency and reliability, ideal for industrial applications where durability matters. With its low-profile package and wide temperature range, it seamlessly fits into various environments, delivering rapid data access while conserving power. Trust STMicroelectronics for quality that drives your next project to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and resistance to environmental factors, making the IC reliable for various applications.

Surface Mount: YES

Surface mount technology allows for efficient use of PCB space and supports automated assembly processes, reducing manufacturing costs.

Package Shape: RECTANGULAR

A rectangular package shape enables easy integration into tight spaces within electronic systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies timing requirements, making the product easier to integrate into various designs.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM provides a versatile memory solution, allowing for both data retention and quick access speeds.

Power Supplies (V): 1.8/2

Low power supply requirements of 1.8 to 2V enhance energy efficiency, making the product ideal for battery-powered devices.

No. of Terminals: 66

A higher number of terminals allows for more connections, providing flexibility in design and enhancing functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This packaging style facilitates excellent thermal performance and allows for higher density layouts on PCBs.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature of 85 °C ensures reliability in demanding environments, suitable for industrial applications.

Organization: 2MX16

This organization supports extensive data handling capabilities, making the IC suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

-capable of functioning in low temperatures makes it versatile for use in extreme environments.

Terminal Finish: TIN LEAD

Tin-lead finish promotes improved solderability, ensuring reliable connections and longevity during manufacturing.

Terminal Position: BOTTOM

Bottom-mounted terminals enhance space efficiency and simplify integration into existing designs.

Maximum Seated Height: 1.4 mm

A low seated height supports compact designs, making the product ideal for space-constrained applications.

Width: 8 mm

The compact width aids in fitting the IC into tight circuit layouts, maximizing design efficiency.

Minimum Supply Voltage (Vsup): 1.65 V

The minimum supply voltage of 1.65V ensures compatibility with a variety of low-voltage applications.

Length: 12 mm

At 12 mm in length, the IC's dimensions do not compromise its performance, making it suitable for diverse applications.

Temperature Grade: INDUSTRIAL

Industrial-grade components are designed for rigorous operations, ensuring reliability in challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, making the IC efficient for modern applications.

Terminal Form: BALL

Ball terminal form provides a robust connection and aids in heat dissipation, enhancing overall performance.

Maximum Supply Current: 40 mA

A maximum supply current of 40 mA allows for sufficient power for various applications while maintaining efficiency.

No. of Words: 2097152 words

With 2,097,152 words, this IC can handle large datasets, making it suitable for memory-intensive applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling and transfer rates.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for high-density packaging, crucial for advanced electronics.

No. of Words Code: 2M

The 2M words coding improves data handling capabilities, suitable for various applications requiring extensive memory.

Maximum Supply Voltage (Vsup): 2.2 V

A maximum supply voltage of 2.2V ensures compatibility with low-voltage systems and enhances energy efficiency.

Memory Density: 33554432 bit

With a memory density of 33,554,432 bits, this IC provides ample storage for complex applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this product is optimized for data storage and retrieval operations, enhancing performance.

Maximum Standby Current: 0.000025 Amp

Very low standby current helps save power in low-activity scenarios, ideal for energy-critical applications.

Maximum Access Time: 100 ns

A maximum access time of 100 ns allows for quick data retrieval, making it suitable for high-speed applications.

Technical Specifications

Other Function Memory ICs M36DR232B100ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232B100ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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