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M36DR232A100ZA6C

STMicroelectronics

M36DR232A100ZA6C by STMicroelectronics

M36DR232A100ZA6C from STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M x 16 organization with mixed FLASH+SRAM technology. It operates b/w -40 °C to 85°C and supports supply voltages of 1.65V to 2.2V. Ideal for industrial applications, it offers fast access times of up to 100 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,230 parts In-Stock

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Vyrian

USA . 4,184 parts In-Stock

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4,184

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Anansix

USA . 659 parts In-Stock

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659

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 282 parts In-Stock

1+ parts

$3.649

100+ parts

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$3.284

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282

$3.649

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MKK Technologies

India . 1,002 parts In-Stock

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$6.861

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$6.861

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DigiPath Technology Company

USA . 1,002 parts In-Stock

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$6.861

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$6.861

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Corphita

USA . 2,864 parts In-Stock

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Parana Technologies

USA . 1,283 parts In-Stock

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$4.363

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$4.363

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Overview

Unlock the future of memory solutions with the M36DR232A100ZA6C from STMicroelectronics! Renowned for their high-quality products, STMicroelectronics delivers this advanced FLASH+SRAM memory IC that ensures reliable performance even in extreme conditions. Ideal for industrial applications, it boasts low power consumption and exceptional durability. Elevate your designs with cutting-edge technology that offers unmatched value, ensuring your projects run efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials provides durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of space on PCBs, enhancing overall system performance.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on the board and supports efficient mounting.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access and optimal performance in real-time applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM provides both high-speed performance and the longevity of non-volatile memory, offering versatility in design.

Power Supplies (V): 1.8/2

Operating at a low voltage range contributes to energy efficiency, making it suitable for battery-operated devices.

No. of Terminals: 66

A higher terminal count allows for greater connectivity options, ensuring flexibility in design and potential enhancements.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style supports high-density designs with low profile requirements, ideal for space-constrained applications.

Maximum Operating Temperature: 85 °C

An extended operating temperature range makes this IC suitable for industrial applications in challenging environments.

Organization: 2MX16

This organization format allows for efficient data storage and retrieval, enhancing performance in data-intensive applications.

Minimum Operating Temperature: -40 °C

The capability to operate in extreme cold environments makes this memory IC highly reliable for outdoor and industrial applications.

Terminal Finish: TIN LEAD

Tin lead finishing enhances solderability and improves the durability of connections, ensuring long-term reliability.

Terminal Position: BOTTOM

Bottom terminal positioning allows for more streamlined routing on PCBs and improved thermal performance.

Maximum Seated Height: 1.4 mm

A low seated height supports compact designs and fits within tight space constraints, ideal for mobile applications.

Width: 8 mm

A compact width enhances layout possibilities, allowing designers to maximize available board space.

Minimum Supply Voltage (Vsup): 1.65 V

The ability to operate at low supply voltages helps reduce power consumption, essential for energy-efficient systems.

Length: 12 mm

The short length aids in space optimization for PCB designs while maintaining high performance.

Temperature Grade: INDUSTRIAL

Industrial-grade components ensure reliability and performance in harsh conditions, suitable for various industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high integration density, enhancing the overall efficiency of the device.

Terminal Form: BALL

Ball terminal form factors enhance thermal performance and reliability in compact designs.

Maximum Supply Current: 40 mA

A moderate maximum supply current provides a good balance between performance and power consumption, making it versatile for many applications.

No. of Words: 2097152 words

This significant amount of memory ensures ample data storage capacity for a wide range of applications.

Memory Width: 16

A 16-bit memory width supports high data throughput, enhancing performance in data-intensive tasks.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for high-density designs, facilitating compact and efficient PCB layouts.

No. of Words Code: 2M

With 2 million words, this IC ensures comprehensive memory for sophisticated applications.

Maximum Supply Voltage (Vsup): 2.2 V

With a maximum supply voltage of 2.2 V, this IC is adaptable to various low-power system designs.

Memory Density: 33554432 bit

This high memory density allows for storing large amounts of data, suitable for advanced and complex applications.

Memory IC Type: MEMORY CIRCUIT

This specification confirms that the IC is designed specifically for memory applications, ensuring optimized performance.

Maximum Standby Current: 0.000025 Amp

A minimal standby current enhances energy efficiency, making it ideal for low-power applications.

Maximum Access Time: 100 ns

The fast access time improves the responsiveness of systems employing this memory IC, ensuring efficient performance.

Technical Specifications

Other Function Memory ICs M36DR232A100ZA6C attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36DR232A100ZA6C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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