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M36D0R6040T0ZAI

STMicroelectronics

M36D0R6040T0ZAI by STMicroelectronics

M36D0R6040T0ZAI from STMicroelectronics features a mixed FLASH+PSRAM memory type with a density of 67108864 bits. It operates asynchronously at voltages b/w 1.7V and 1.95V, ensuring efficient performance in compact devices. Ideal for applications requiring low power consumption and high-speed access, it supports up to 70 ns access time.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,941 parts In-Stock

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Vyrian

USA . 2,390 parts In-Stock

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Anansix

USA . 1,141 parts In-Stock

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ComSIT Distribution GmbH

Germany . 204 parts In-Stock

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Prism Electronics

USA . 12 parts In-Stock

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IDEA Electronic Components Group

UK . 409 parts In-Stock

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$2.460

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$2.214

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409

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MKK Technologies

India . 217 parts In-Stock

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$4.626

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217

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DigiPath Technology Company

USA . 217 parts In-Stock

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$4.626

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217

$4.626

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A-Z Elektronik GmbH

Germany . 5,993 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,995 parts In-Stock

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Corphita

USA . 2,347 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Parana Technologies

USA . 1,845 parts In-Stock

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Perfect Parts

USA . 13 parts In-Stock

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Overview

Unlock unparalleled performance with the M36D0R6040T0ZAI from STMicroelectronics—a leader in innovative memory solutions. Designed for versatility, this advanced memory IC merges FLASH and PSRAM technologies, making it ideal for a wide range of applications from consumer electronics to industrial systems. Benefit from its compact design, efficiency, and high reliability, ensuring your projects achieve optimal performance and longevity. Elevate your design with unmatched quality and support from a trusted manufacturer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Surface Mount: YES

Surface mount capability allows for a compact design and easier integration into modern electronics.

Package Shape: RECTANGULAR

The rectangular shape is efficient for space utilization on PCBs, which is critical for modern device design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing, which can enhance performance in certain applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides high-speed performance and greater memory capacity, making it versatile for differing storage needs.

Nominal Supply Voltage / Vsup: 1.8 V

A low nominal supply voltage of 1.8 V aids in reducing power consumption, promoting energy efficiency in portable devices.

Power Supplies (V): 1.8

Operating on 1.8V power supplies simplifies power management and integration into low-power designs.

No. of Terminals: 67

With 67 terminals, this memory IC can offer extensive connectivity options for complex applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch design facilitate high-density packaging, essential for modern compact electronic devices.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C allows it to function reliably in warm environments, ensuring stability.

Organization: 4MX16

This organization format supports efficient data management and retrieval, tailored for specific applications.

Minimum Operating Temperature: -30 °C

Operating efficiently down to -30 °C makes this product suitable for applications in harsh environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and is a proven choice for reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for mounting in space-constrained designs, optimizing layout.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2 mm aids in maintaining low profiles for sleek device designs.

Width: 8 mm

The width of 8 mm is practical for diverse applications, allowing for easy integration without significantly impacting overall dimensions.

Minimum Supply Voltage (Vsup): 1.7 V

With a low minimum supply voltage, this IC is compatible with a range of power sources, enhancing versatility.

Length: 12 mm

A length of 12 mm is well-suited for various PCB layouts, offering design flexibility.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, ideal for efficient memory solutions.

Terminal Form: BALL

Ball terminal form provides reliable connection points that facilitate effective heat dispersal.

Maximum Supply Current: 26 mA

A maximum supply current of 26 mA enables efficient power usage while allowing for substantial performance.

No. of Words: 4194304 words

With over 4 million words, this memory IC supports significant data storage requirements for demanding applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and retrieval, optimizing performance.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch is ideal for modern PCB designs, allowing for high-density layouts.

No. of Words Code: 4M

A code of 4M words corresponds to substantial data management capabilities, suitable for complex applications.

Maximum Supply Voltage (Vsup): 1.95 V

The ability to operate up to 1.95 V allows this IC to function effectively in a range of environments.

Memory Density: 67108864 bit

A dense memory of 67108864 bits offers extensive storage capacity, addressing high memory demands in modern applications.

Memory IC Type: MEMORY CIRCUIT

Being categorized as a memory circuit highlights its primary function and suitability for a variety of electronic uses.

Maximum Standby Current: 0.00011 Amps

Low maximum standby current minimizes power wastage, making it an excellent choice for battery-powered devices.

Maximum Access Time: 70 ns

A fast access time of 70 ns enhances response speed, which is critical for performance in real-time applications.

Technical Specifications

Other Function Memory ICs M36D0R6040T0ZAI attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B67

JESD-609 Code:

e0

Length:

12 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

67

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA67,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

26 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36D0R6040T0ZAI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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