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M36D0R6040B0ZAIE

STMicroelectronics

M36D0R6040B0ZAIE by STMicroelectronics

M36D0R6040B0ZAIE by STMicroelectronics is a versatile memory IC featuring 4M words of mixed FLASH+PSRAM, operating at 1.8V with a max temp of 85 °C. Its asynchronous mode and compact grid array design make it ideal for space-constrained applications. With a fast access time of 70 ns, it's perfect for high-performance devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,990 parts In-Stock

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3,990

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Digiode

USA . 3,497 parts In-Stock

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3,497

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Anansix

USA . 1,412 parts In-Stock

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1,412

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,148 parts In-Stock

1+ parts

$4.080

100+ parts

-

1k+ parts

$3.672

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1,148

$4.080

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$3.672

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MKK Technologies

India . 1,436 parts In-Stock

1+ parts

$7.673

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1,436

$7.673

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DigiPath Technology Company

USA . 1,436 parts In-Stock

1+ parts

$7.673

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1,436

$7.673

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Corphita

USA . 1,247 parts In-Stock

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1,247

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Parana Technologies

USA . 388 parts In-Stock

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$4.878

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388

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$4.878

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Overview

Unlock the full potential of your innovative designs with the M36D0R6040B0ZAIE from STMicroelectronics. This advanced mixed memory IC combines high-density FLASH and PSRAM, delivering unparalleled performance in a compact package. Renowned for its unwavering quality and reliability, STMicroelectronics empowers you to create cutting-edge applications across industries—from IoT devices to mobile tech—while ensuring efficiency and longevity. Elevate your projects with unmatched speed and flexibility!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers a good balance of durability, weight, and cost efficiency, making the memory IC suitable for various applications.

Surface Mount: YES

Being a surface mount device facilitates compact PCB designs and automated assembly processes, enhancing manufacturability.

Package Shape: RECTANGULAR

The rectangular package shape allows for optimized space utilization on printed circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies design integration, leading to faster response times and reducing complexity in memory access.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM enables versatile storage options, making it suitable for applications requiring both non-volatile and volatile memory.

Nominal Supply Voltage / Vsup: 1.8 V

A nominal supply voltage of 1.8V is energy-efficient, which is critical for battery-operated and low-power devices.

Power Supplies (V): 1.8

Operating at this low voltage contributes to lower power consumption, enhancing the overall energy efficiency of systems utilizing this IC.

No. of Terminals: 67

With 67 terminals, it supports a wide range of connectivity options and functionalities, making it adaptable to different circuit designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array design allows for high-density connections and efficient heat dissipation in compact applications, enhancing performance and reliability.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes this memory IC suitable for a variety of environments, including industrial applications.

Organization: 4MX16

The 4M x 16 organization allows for efficient data storage and access patterns, optimizing performance in data-intensive applications.

Minimum Operating Temperature: -30 °C

Capable of functioning in low-temperature environments ensures reliability in outdoor and harsh conditions.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances solderability, durability, and overall connection quality, reducing the risk of failure.

Terminal Position: BOTTOM

Bottom-positioned terminals facilitate efficient layout and design possibilities on the PCB.

Maximum Seated Height: 1.2 mm

The thin profile allows for space-saving designs, making it ideal for applications where height is a constraint.

Width: 8 mm

A width of 8 mm strikes a balance between compact size and sufficient area for effective performance.

Minimum Supply Voltage (Vsup): 1.7 V

This flexibility in supply voltage offers compatibility with a wider range of power systems and enhances device versatility.

Length: 12 mm

The length of 12 mm helps maintain a compact form factor, suitable for space-constrained applications.

Technology: CMOS

CMOS technology provides low power consumption and high-speed performance, making this IC efficient for various applications.

Terminal Form: BALL

Ball terminal format allows for enhanced reliability and superior connection quality in surface mount applications.

Maximum Supply Current: 26 mA

A maximum supply current of 26 mA enables efficient performance while ensuring that power usage is kept at a reasonable level.

No. of Words: 4194304 words

With over 4 million words, this memory IC offers substantial data storage capacity, ideal for applications requiring large memory support.

Memory Width: 16

A memory width of 16 bits allows for faster data transfer rates, improving overall system performance.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch is suitable for high-density PCB designs, optimizing space while maintaining connection integrity.

No. of Words Code: 4M

The 4M words code confirms robust memory capacity, making it relevant for modern applications in consumer electronics, IoT, and more.

Maximum Supply Voltage (Vsup): 1.95 V

Accepting a maximum supply voltage of 1.95 V ensures compatibility with a broad range of devices and power systems.

Memory Density: 67108864 bit

With a density of 64 megabits, this IC can store considerable amounts of data, suitable for demanding applications such as multimedia and telecommunications.

Memory IC Type: MEMORY CIRCUIT

Being classified as a memory circuit indicates its primary purpose, optimizing its design for memory-intensive applications.

Maximum Standby Current: 0.00011 Amp

A low maximum standby current minimizes power drain when the IC is not actively in use, contributing to energy conservation in portable devices.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, this memory IC ensures quick data retrieval, enhancing the responsiveness of applications.

Technical Specifications

Other Function Memory ICs M36D0R6040B0ZAIE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B67

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

67

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA67,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

26 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36D0R6040B0ZAIE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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