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LRI64-W4/1GE

STMicroelectronics

LRI64-W4/1GE by STMicroelectronics

STMicroelectronics LRI64-W4/1GE is a 64-bit memory circuit with CMOS technology. It operates asynchronously in temperatures ranging from -20 °C to 85°C. This surface-mount IC, organized as 64x1, is ideal for applications requiring unencased chip package style and voltage supply of 1.5V to 3V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,232 parts In-Stock

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6,232

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Anansix

USA . 2,393 parts In-Stock

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2,393

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Digiode

USA . 1,142 parts In-Stock

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1,142

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 102 parts In-Stock

1+ parts

$4.705

100+ parts

-

1k+ parts

$4.234

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102

$4.705

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$4.234

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MKK Technologies

India . 1,934 parts In-Stock

1+ parts

$8.847

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1,934

$8.847

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DigiPath Technology Company

USA . 1,934 parts In-Stock

1+ parts

$8.847

100+ parts

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1,934

$8.847

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AZTECH Wire

Italy . 176 parts In-Stock

1+ parts

$10.080

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176

$10.080

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Parana Technologies

USA . 233 parts In-Stock

1+ parts

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100+ parts

$5.625

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233

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$5.625

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Corphita

USA . 79 parts In-Stock

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79

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Overview

Unlock the power of seamless data storage with the LRI64-W4/1GE by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in all their products. This versatile memory IC is perfect for a wide range of applications and offers customers exceptional value and performance. Say goodbye to data storage woes and elevate your projects with the superior capabilities of the LRI64-W4/1GE.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on printed circuit boards, saving space and reducing assembly time.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory cells, increasing speed and efficiency.

Package Style (Meter): UNCASED CHIP

The unencased chip package style reduces overall size and weight of the memory IC, making it ideal for compact electronic devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this memory IC is reliable and can perform well in various environments.

Organization: 64X1

The 64X1 organization indicates a high density of memory cells, providing ample storage capacity for data.

Minimum Operating Temperature: -20 °C

With a low minimum operating temperature, this memory IC can withstand cold conditions without impacting performance.

Terminal Position: UPPER

The upper terminal position simplifies connections and ensures consistent alignment during installation.

Minimum Supply Voltage (Vsup): 1.5 V

The low minimum supply voltage requirement helps in reducing power consumption and extending battery life in portable devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this memory IC energy-efficient and reliable.

Terminal Form: NO LEAD

The no lead terminal form simplifies manufacturing processes and enhances reliability by eliminating potential points of failure.

No. of Words: 64 words

With 64 words of memory storage, this IC can store a significant amount of data, suitable for various applications.

No. of Words Code: 64

The 64 code for the number of words aligns with the memory density and capacity of this IC, providing accurate information for compatibility.

Maximum Supply Voltage (Vsup): 3 V

The high maximum supply voltage tolerance ensures compatibility with different power sources, enhancing versatility and usability.

Memory Density: 64 bit

With a memory density of 64 bits, this IC can store and retrieve data quickly and efficiently, suitable for high-speed applications.

Memory IC Type: MEMORY CIRCUIT

Being a dedicated memory circuit type, this IC is specifically designed for memory storage purposes, ensuring reliable and optimized performance.

Technical Specifications

Other Function Memory ICs LRI64-W4/1GE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

X-XUUC-N

Memory Density:

64 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

64X1

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Supply Voltage (Vsup):

3 V

Minimum Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Trade Compliance

LRI64-W4/1GE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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