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LRI64-MBTG/1GE

STMicroelectronics

LRI64-MBTG/1GE by STMicroelectronics

LRI64-MBTG/1GE by STMicroelectronics is a 64-bit memory circuit with CMOS technology. It operates asynchronously with a supply voltage range of 1.5V to 3V, suitable for various applications requiring small outline and thin profile package styles. Ideal for compact electronic devices needing low power consumption and high memory density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,654 parts In-Stock

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1,654

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Vyrian

USA . 864 parts In-Stock

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864

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Anansix

USA . 620 parts In-Stock

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620

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 469 parts In-Stock

1+ parts

$3.509

100+ parts

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$3.158

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469

$3.509

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$3.158

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MKK Technologies

India . 1,095 parts In-Stock

1+ parts

$6.598

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1,095

$6.598

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DigiPath Technology Company

USA . 1,095 parts In-Stock

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$6.598

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1,095

$6.598

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Corphita

USA . 2,175 parts In-Stock

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2,175

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Parana Technologies

USA . 21 parts In-Stock

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$4.195

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21

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$4.195

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Overview

Unlock the potential of your electronic devices with the LRI64-MBTG/1GE by STMicroelectronics. Built with precision and expertise, this memory circuit offers reliable performance and durability. Ideal for a wide range of applications, this small outline, very thin profile IC provides seamless operation in various operating modes. With a minimum supply voltage of 1.5V and maximum supply voltage of 3V, customers can enjoy efficient power consumption without sacrificing performance. Experience the value and benefits of this high-quality product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the memory IC, ensuring a longer lifespan and reliability.

Surface Mount: YES

Easy to integrate into circuit boards, making it simple to design and manufacture electronic devices.

Package Shape: RECTANGULAR

Efficient use of space on circuit boards, allowing for compact and organized electronic designs.

Operating Mode: ASYNCHRONOUS

Allows for independent operation, providing flexibility and versatility in various applications.

No. of Terminals: 8

Provides sufficient connectivity for interfacing with other components, ensuring smooth communication within the system.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, making it suitable for a wide range of operating conditions.

Organization: 64X1

Organized layout of memory cells, offering efficient data storage and retrieval capabilities.

Technology: CMOS

Lower power consumption and higher noise immunity, enhancing overall performance and efficiency of the memory IC.

Memory Density: 64 bit

Sufficient memory capacity for storing data, suitable for many electronic applications.

Technical Specifications

Other Function Memory ICs LRI64-MBTG/1GE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

64X1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

3 V

Minimum Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Trade Compliance

LRI64-MBTG/1GE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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