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LRI64-SBN18/3XX

STMicroelectronics

LRI64-SBN18/3XX by STMicroelectronics

LRI64-SBN18/3XX by STMicroelectronics is a 64-bit memory circuit with CMOS technology. It operates asynchronously, has an organization of 64X1, and supports a supply voltage range from 1.5V to 3V. This surface-mount IC in unencased chip package style is ideal for applications requiring high-speed memory access and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,873 parts In-Stock

1+ parts

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2,873

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Digiode

USA . 2,425 parts In-Stock

1+ parts

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2,425

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Vyrian

USA . 1,382 parts In-Stock

1+ parts

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1,382

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,400 parts In-Stock

1+ parts

$4.016

100+ parts

-

1k+ parts

$3.614

10k+ parts

-

1,400

$4.016

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$3.614

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MKK Technologies

India . 1,717 parts In-Stock

1+ parts

$7.551

100+ parts

-

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10k+ parts

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1,717

$7.551

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DigiPath Technology Company

USA . 1,717 parts In-Stock

1+ parts

$7.551

100+ parts

-

1k+ parts

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10k+ parts

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1,717

$7.551

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Corphita

USA . 1,601 parts In-Stock

1+ parts

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1,601

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Parana Technologies

USA . 1,296 parts In-Stock

1+ parts

-

100+ parts

$4.802

1k+ parts

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10k+ parts

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1,296

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$4.802

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Overview

Unlock the power of innovation with the LRI64-SBN18/3XX by STMicroelectronics. Manufactured with precision and excellence, this memory circuit IC offers unmatched quality and reliability. Ideal for a wide range of applications, this surface mount chip operates asynchronously and features a 64-bit memory density. With a minimum supply voltage of 1.5V and maximum of 3V, this chip delivers exceptional performance in any environment. Trust STMicroelectronics to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology makes this product easy to install on circuit boards, allowing for efficient production processes.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and can be beneficial in various applications where synchronization is not critical.

Package Style (Meter): UNCASED CHIP

Uncased chip package style helps in reducing overall product size and weight, making it suitable for compact electronic devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand heat and perform reliably in challenging environments.

Organization: 64X1

The 64X1 organization provides a good balance between memory capacity and access speed, suitable for many memory applications.

Minimum Operating Temperature: -20 °C

A low minimum operating temperature ensures that this product can function in cold conditions without any issues.

Terminal Position: UPPER

Upper terminal position makes it easier to connect this product within a circuit system, improving overall usability and accessibility.

Minimum Supply Voltage (Vsup): 1.5 V

Low minimum supply voltage requirements make this product energy-efficient and suitable for battery-operated devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product reliable and efficient in various applications.

Terminal Form: NO LEAD

No lead terminal form simplifies the installation process and ensures a secure connection, enhancing the overall reliability of this product.

No. of Words: 64 words

With 64 words of memory density, this product offers sufficient storage capacity for data processing and storage requirements.

Maximum Supply Voltage (Vsup): 3 V

A high maximum supply voltage tolerance provides flexibility in power supply options, accommodating various voltage levels in different systems.

Memory Density: 64 bit

The 64-bit memory density enables efficient data storage and retrieval, meeting the needs of memory-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit IC, this product is designed specifically for handling memory-related functions, ensuring optimal performance in memory applications.

Technical Specifications

Other Function Memory ICs LRI64-SBN18/3XX attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

X-XUUC-N

Memory Density:

64 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

64X1

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Supply Voltage (Vsup):

3 V

Minimum Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Trade Compliance

LRI64-SBN18/3XX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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