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LRI64-SBN18/2GE

STMicroelectronics

LRI64-SBN18/2GE by STMicroelectronics

LRI64-SBN18/2GE by STMicroelectronics is a 64-bit memory circuit with CMOS technology. It operates asynchronously with a supply voltage range of 1.5V to 3V, suitable for various applications requiring a compact unencased chip package style and upper terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,765 parts In-Stock

1+ parts

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4,765

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Vyrian

USA . 3,205 parts In-Stock

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3,205

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Anansix

USA . 2,502 parts In-Stock

1+ parts

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2,502

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,425 parts In-Stock

1+ parts

$4.579

100+ parts

-

1k+ parts

$4.121

10k+ parts

-

1,425

$4.579

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$4.121

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MKK Technologies

India . 1,666 parts In-Stock

1+ parts

$8.610

100+ parts

-

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10k+ parts

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1,666

$8.610

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DigiPath Technology Company

USA . 1,666 parts In-Stock

1+ parts

$8.610

100+ parts

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10k+ parts

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1,666

$8.610

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Corphita

USA . 4,806 parts In-Stock

1+ parts

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4,806

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Parana Technologies

USA . 1,991 parts In-Stock

1+ parts

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100+ parts

$5.475

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10k+ parts

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1,991

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$5.475

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Overview

Looking for a high-quality memory IC for your electronics project? Look no further than the LRI64-SBN18/2GE by STMicroelectronics. With its reliable manufacturing and proven track record, this memory IC is perfect for a wide range of applications. From consumer electronics to industrial machinery, this product offers exceptional value and performance. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs. Choose the LRI64-SBN18/2GE for seamless integration and superior results.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and convenient installation, making the product suitable for a wide range of applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation offers flexibility and efficient use of resources, enhancing the overall performance of the product.

Package Style (Meter): UNCASED CHIP

The unencased chip design allows for a smaller form factor, making it ideal for space-constrained environments.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product is reliable and capable of handling demanding conditions.

Organization: 64X1

The 64X1 organization provides a good balance between memory capacity and efficient data access, suitable for various applications.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature ensures reliable performance even in harsh environmental conditions.

Terminal Position: UPPER

The upper terminal position simplifies connectivity and installation, making the product user-friendly.

Minimum Supply Voltage (Vsup): 1.5 V

The low minimum supply voltage requirement ensures energy efficiency and compatibility with a wide range of systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall reliability and performance of the product.

Terminal Form: NO LEAD

The no lead terminal form simplifies installation and reduces the risk of damage during handling, making the product user-friendly.

No. of Words: 64 words

The 64 words capacity offers sufficient memory storage for a variety of applications, enhancing the versatility of the product.

Maximum Supply Voltage (Vsup): 3 V

The high maximum supply voltage tolerance provides flexibility and compatibility with different power sources, improving the product's usability.

Memory Density: 64 bit

With a memory density of 64 bits, the product offers efficient data storage and retrieval capabilities, suitable for various memory-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type IC, this product is specifically designed for memory-related functions, ensuring reliable and high-performance memory operations.

Technical Specifications

Other Function Memory ICs LRI64-SBN18/2GE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

X-XUUC-N

Memory Density:

64 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

64X1

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Supply Voltage (Vsup):

3 V

Minimum Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Trade Compliance

LRI64-SBN18/2GE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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