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LRI64-SBN18/3GE

STMicroelectronics

LRI64-SBN18/3GE by STMicroelectronics

LRI64-SBN18/3GE by STMicroelectronics is a 64-bit memory circuit with CMOS technology. It operates asynchronously in a temperature range of -20 °C to 85°C. This surface-mount IC has an organization of 64x1 and is suitable for various applications requiring low-voltage memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,085 parts In-Stock

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4,085

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Vyrian

USA . 3,384 parts In-Stock

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3,384

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Anansix

USA . 164 parts In-Stock

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164

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,749 parts In-Stock

1+ parts

$5.021

100+ parts

-

1k+ parts

$4.519

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1,749

$5.021

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$4.519

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MKK Technologies

India . 704 parts In-Stock

1+ parts

$9.442

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704

$9.442

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DigiPath Technology Company

USA . 704 parts In-Stock

1+ parts

$9.442

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704

$9.442

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Corphita

USA . 3,741 parts In-Stock

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3,741

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Parana Technologies

USA . 2,109 parts In-Stock

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$6.004

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2,109

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$6.004

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Overview

Unlock the power of cutting-edge technology with the LRI64-SBN18/3GE by STMicroelectronics. Known for their superior quality and reliability, STMicroelectronics offers a wide range of memory ICs for various applications. The LRI64-SBN18/3GE is perfect for asynchronous operating modes, featuring a 64-bit memory density in a compact uncased chip package. With a wide temperature range and low supply voltage requirements, this product provides exceptional value and performance for your design needs. Experience the difference with STMicroelectronics.

Feature Benefit Bullets

Surface Mount: YES

Surface mount option allows for easy and efficient installation on circuit boards, saving space and enabling automated assembly processes.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing and communication with other components, allowing for smoother data transfer and processing.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers a compact design and cost-effective solution for memory integration within electronic devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this memory IC can function reliably in various environmental conditions without overheating.

Organization: 64X1

Organized as 64 words by 1 bit, this memory IC provides a specific configuration that meets the memory requirements of certain applications.

Minimum Operating Temperature: -20 °C

Capable of operating at low temperatures, this memory IC is suitable for use in environments where temperature may fluctuate.

Terminal Position: UPPER

Upper terminal position facilitates easy connections to other components and circuitry, enhancing overall system integration.

Minimum Supply Voltage (Vsup): 1.5 V

Low minimum supply voltage requirement allows for energy-efficient operation and compatibility with a wide range of power sources.

Technology: CMOS

CMOS technology enables low power consumption, high speed, and reliable performance, making this memory IC a reliable choice for various applications.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and maintenance, reducing the risk of damage to the component during handling.

No. of Words: 64 words

64 words of memory capacity provide ample storage for data and instructions, meeting the needs of many embedded systems and electronic devices.

Maximum Supply Voltage (Vsup): 3 V

With a maximum supply voltage of 3V, this memory IC can handle higher voltage levels without compromising its performance or reliability.

Memory Density: 64 bit

With a memory density of 64 bits, this memory IC offers sufficient storage capacity for a wide range of applications, from simple data storage to more complex operations.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, this IC is optimized for storing and retrieving data efficiently, making it a reliable choice for memory-intensive tasks.

Technical Specifications

Other Function Memory ICs LRI64-SBN18/3GE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

X-XUUC-N

Memory Density:

64 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

64X1

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Supply Voltage (Vsup):

3 V

Minimum Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Trade Compliance

LRI64-SBN18/3GE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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