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DE275X2-102N06A

IXYS Corporation

DE275X2-102N06A by IXYS Corporation

DE275X2-102N06A by IXYS Corp is a N-channel RF FET with 1000V DS breakdown voltage, 16A max drain current, and operates in enhancement mode. Commonly used for switching applications in very high frequency bands due to its isolated case connection and small outline package style.

Median Price

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Lifecycle Status

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1

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

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15

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 5,370 parts In-Stock

1+ parts

$46.490

100+ parts

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1k+ parts

$32.545

10k+ parts

$32.545

5,370

$46.490

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$32.545

$32.545

Ampacity Inc.

Singapore . 1,049 parts In-Stock

1+ parts

$51.050

100+ parts

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1,049

$51.050

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Unleash the power of cutting-edge technology with the DE275X2-102N06A by IXYS Corporation. Known for their superior quality and reliability, IXYS Corporation's RF Power Field Effect Transistors are a game-changer in the industry. This N-CHANNEL transistor offers exceptional performance in switching applications, making it ideal for a wide range of industries. With a minimum DS Breakdown Voltage of 1000V and a maximum Drain Current of 16A, this transistor delivers unmatched efficiency and durability. Elevate your projects to new heights with the DE275X2-102N06A and experience the difference that IXYS Corporation brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and can withstand various environmental conditions, making this product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher mobility, resulting in better performance and efficiency in switching applications.

Configuration: COMMON SOURCE, 2 ELEMENTS

Common source configuration allows for easy voltage amplification and 2 elements provide redundancy and improved performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation.

Minimum DS Breakdown Voltage: 1000 V

High breakdown voltage provides a wide safety margin and protection against voltage surges, making it suitable for high-power applications.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Drain Current (ID): 16 A

High maximum drain current allows for handling of high power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance in elevated temperature environments, increasing the product's versatility.

Technical Specifications

RF Power Field Effect Transistors (FET) DE275X2-102N06A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (ID):

16 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DE275X2-102N06A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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