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PD60004

STMicroelectronics

PD60004 by STMicroelectronics

PD60004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in the L band, and supports surface mount with a compact SO package. This transistor excels in high-frequency performance up to 165 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,357 parts In-Stock

1+ parts

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4,357

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Digiode

USA . 2,798 parts In-Stock

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2,798

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Anansix

USA . 1,177 parts In-Stock

1+ parts

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1,177

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 22 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

$0.909

10k+ parts

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22

$1.010

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$0.909

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MKK Technologies

India . 1,310 parts In-Stock

1+ parts

$1.900

100+ parts

-

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10k+ parts

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1,310

$1.900

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DigiPath Technology Company

USA . 1,310 parts In-Stock

1+ parts

$1.900

100+ parts

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1,310

$1.900

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Corphita

USA . 564 parts In-Stock

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564

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Parana Technologies

USA . 392 parts In-Stock

1+ parts

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100+ parts

$1.208

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392

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$1.208

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Overview

Unlock the potential of your RF applications with the PD60004 from STMicroelectronics, a leader in semiconductor innovation. This N-channel FET combines exceptional performance with reliability, making it an ideal choice for amplifiers in various high-frequency environments. Its compact design and surface-mount capabilities enhance efficiency while ensuring optimal thermal management. Elevate your projects with proven quality that drives superior results and unmatched value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent durability and thermal stability, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configurations are known for superior performance and efficiency, making this FET ideal for amplification applications.

Configuration: SINGLE

A single configuration allows for simplified circuit designs and reduces space requirements on printed circuit boards.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET excels in audio and RF applications, ensuring high signal integrity.

Surface Mount: YES

Surface mount capability enables efficient use of board space and allows for automated assembly processes.

Minimum DS Breakdown Voltage: 65 V

The 65 V breakdown voltage provides robust performance in high-voltage applications, enhancing reliability.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient layout and soldering, ensuring stable connections on the PCB.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and are ideal for automated manufacturing processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides necessary control over the device, ensuring it only conducts when needed, thereby optimizing power consumption.

Highest Frequency Band: L BAND

Operating within the L band makes this FET suitable for applications in telecommunications and radar, where long-range communication is needed.

No. of Terminals: 2

A two-terminal design enhances simplicity in circuit integration and lowers the likelihood of connection errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the overall footprint, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance, allowing for efficient signal processing and lower power losses.

Maximum Operating Temperature: 165 °C

A maximum operating temperature of 165 °C ensures reliability and performance under high temperature environments.

Transistor Element Material: SILICON

Silicon as the element material offers excellent thermal stability and is widely used in high-performance electronic devices.

Terminal Position: DUAL

Dual terminal positioning supports effective heat dissipation and allows for versatile mounting options.

Technical Specifications

RF Power Field Effect Transistors (FET) PD60004 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD60004 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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