Loading...

PD60004S

STMicroelectronics

PD60004S by STMicroelectronics

PD60004S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L band frequencies. Its compact SO package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,649 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,649

-

-

-

-

Vyrian

USA . 4,430 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,430

-

-

-

-

Anansix

USA . 664 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

664

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,314 parts In-Stock

1+ parts

$1.325

100+ parts

-

1k+ parts

$1.192

10k+ parts

-

1,314

$1.325

-

$1.192

-

MKK Technologies

India . 1,026 parts In-Stock

1+ parts

$2.491

100+ parts

-

1k+ parts

-

10k+ parts

-

1,026

$2.491

-

-

-

DigiPath Technology Company

USA . 1,026 parts In-Stock

1+ parts

$2.491

100+ parts

-

1k+ parts

-

10k+ parts

-

1,026

$2.491

-

-

-

Corphita

USA . 1,610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,610

-

-

-

-

Parana Technologies

USA . 853 parts In-Stock

1+ parts

-

100+ parts

$1.584

1k+ parts

-

10k+ parts

-

853

-

$1.584

-

-

Overview

Unlock your design potential with the PD60004S from STMicroelectronics, a leader in innovation and quality. This advanced RF Power FET is engineered for high-performance amplification, ensuring reliable operation even in demanding conditions. Its compact size and robust thermal capabilities make it ideal for applications ranging from telecommunications to industrial systems. Experience unmatched efficiency and reliability, elevating your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it reliable in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer higher electron mobility, leading to better performance in amplification applications.

Configuration: SINGLE

A single configuration simplifies circuit design while maintaining effective performance, ideal for straightforward applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals, making it an excellent choice for audio and RF applications.

Surface Mount: YES

Surface mount technology allows for compact designs and automated manufacturing processes, enhancing production efficiency.

Minimum DS Breakdown Voltage: 65 V

A minimum breakdown voltage of 65 V ensures the device can handle significant voltage spikes, providing robust operation.

Package Shape: RECTANGULAR

The rectangular package shape facilitates effective PCB layout, optimizing space and improving aesthetic integration.

Terminal Form: FLAT

Flat terminals contribute to better soldering results and reliable electrical connections in surface-mounted designs.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode provides greater control over the transistor's operation, allowing for higher efficiency and linearity.

Highest Frequency Band: L BAND

Being suitable for the L band makes this FET ideal for communications and radar applications where performance at these frequencies is vital.

No. of Terminals: 2

With only two terminals, this device simplifies connection and reduces the complexity of circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving designs, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology enables higher input impedance and faster switching speeds, valuable for modern electronic applications.

Maximum Operating Temperature: 165 °C

A high maximum operating temperature of 165 °C ensures reliable performance even in demanding thermal environments.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its stability and efficiency, making it a trusted choice for FETs.

Terminal Position: DUAL

Dual terminal positioning enhances mounting flexibility and simplifies integration into various circuit designs.

Technical Specifications

RF Power Field Effect Transistors (FET) PD60004S attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD60004S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5