Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors MRF374 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 12.5 dB Power Gain, and operates in the Ultra High Frequency Band. Commonly used as an AMPLIFIER in ENHANCEMENT MODE, it has a max Drain Current of 7A and can operate at temperatures up to 200°C.
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The ceramic and metal-sealed cofired package body material provides durability and reliability, making this product suitable for challenging environments.
The N-channel configuration offers efficient performance and improved power handling capabilities.
The common source configuration with 2 elements allows for easy integration and enhanced amplification capabilities.
Designed specifically for amplifier applications, ensuring optimal signal amplification and performance.
Having a minimum breakdown voltage of 65V ensures reliable operation and protection against voltage spikes.
The minimum power gain of 12.5 dB indicates strong amplification capabilities, resulting in enhanced signal strength.
The rectangular package shape allows for easy mounting and efficient use of space in electronic circuits.
Operating in enhancement mode provides improved control over the transistor's characteristics, leading to enhanced performance.
With a maximum drain current of 7A, this transistor can handle high power levels and current flow efficiently.
The maximum operating temperature of 200°C ensures stability and reliability even under high temperature conditions.
RF Power Field Effect Transistors (FET) MRF374 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
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MRF374 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
RK73H2ATTD10R0F
Koa Speer Electronics
RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.
2N2222A
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
BAV99
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
LL4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
MBRM140T1G
Onsemi
MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.
M39029/56351
Souriau
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;
MBRS3200T3G
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
BSS123-7-F
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
M24308/2-1F
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
PTFA080551EV4R250XTMA1
Infineon Technologies
PTFA080551EV4R250XTMA1 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. It operates in the Ultra High Frequency Band, ideal for amplifier applications. The transistor features a ceramic-metal package, flat terminals, and can withstand temperatures up to 200°C.
PD57070
STMicroelectronics
PD57070 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
SD2904
SD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 5A. This SINGLE configuration transistor is commonly used as an AMPLIFIER in various applications due to its SILICON element material and ENHANCEMENT MODE operation.
PD55035STR-E
STMicroelectronics PD55035STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 95W Power Dissipation. Ideal for high-power RF amplification needs.
A2T18H100-25SR3
NXP Semiconductors
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A2T18S160W31SR3
PD57006S-E
PD57006S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 150 °C.
AFT05MS031NR1
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD3932
SD3932 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. This versatile transistor supports surface mount configurations and withstands temperatures up to 200 °C.
MRF6V10010NR4
NXP's MRF6V10010NR4 is a single N-channel RF FET with 100V DS breakdown voltage, ideal for amplifier applications in L Band. It features a plastic/epoxy package, operates in enhancement mode at up to 200°C, and has a moisture sensitivity level of 3.
PD57045
STMicroelectronics PD57045 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications at Ultra High Frequency Band. With a max ID of 5A and operating temperature of 165 °C, it features GULL WING terminals in a SMALL OUTLINE package.
MRF6VP3450HR5
NXP Semiconductors' MRF6VP3450HR5 is a RF Power FET with 110V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features N-CHANNEL polarity, SINGLE configuration, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max temp of 225°C and comes in a CERAMIC package with FLANGE MOUNT style.
MRF141G
M/a-com Technology Solutions
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
MRF255
Motorola
MRF255 by Motorola is an N-CHANNEL RF Power FET with 13 dB Gp for AMPLIFIER applications. It operates in ENHANCEMENT MODE at VERY HIGH FREQUENCY BAND, handling up to 22 A ID and dissipating 175 W at max temp of 200 °C.
934056582112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2;
CGH40025P
Wolfspeed
CGH40025P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can withstand temperatures up to 175°C.
CGHV1F006S
CGHV1F006S by Wolfspeed is an N-CHANNEL RF Power FET with a 100V DS Breakdown Voltage. Ideal for KU BAND applications, it features Gallium Nitride technology, 0.95A Drain Current, and operates in DEPLETION MODE. This SMALL OUTLINE transistor has 12 terminals and is suitable for AMPLIFIER use.
934064687112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; No. of Terminals: 6; Package Shape: SQUARE;
BLM6G22-30G,118
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 245;
2SK1028
Toshiba
Toshiba's 2SK1028 is an N-CHANNEL RF Power FET with a 100V DS breakdown voltage, ideal for amplifier applications. Operating in enhancement mode, it offers a max drain current of 6A and power dissipation of 125W. With a very high frequency band, this transistor is designed for flange mount installation in various electronic devices.
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MRF300AN
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF300AN-81MHZ
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF300AN-230MHZ
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF300BN
MRF300AN-144MHZ
MRF300AN-13MHZ
MRF300AN-50MHZ
MRF374
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
New Jersey Semiconductor Products
N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Elements: 2;
MRF372R3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Case Connection: SOURCE; Maximum Time At Peak Reflow Temperature (s): 40;
MRF374A
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 302 W; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F4;
MRF372R5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; No. of Elements: 2; Transistor Application: AMPLIFIER;
MRF373ALR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 197 W; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT;
MRF373ALSR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 278 W; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
MRF300A-40MHZ
MRF300A-27MHZ
MRF373R1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 173 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
MRF373SR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 173 W; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 7 A;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 200 Cel;
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