Loading...

A2V07H400-04NR3

NXP Semiconductors

A2V07H400-04NR3 by NXP Semiconductors

NXP Semiconductors A2V07H400-04NR3 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 18.9 dB Power Gain, and operates in the Ultra High Frequency Band. Ideal for amplifier applications, this transistor has a flatpack package style and operates b/w -40 to 225 °C.

Median Price

$104.150

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Richardson RFPD

USA . 50 parts In-Stock

1+ parts

$95.130

100+ parts

$85.890

1k+ parts

-

10k+ parts

-

50

$95.130

$85.890

-

-

Verical

USA . 146 parts In-Stock

1+ parts

$104.150

100+ parts

-

1k+ parts

-

10k+ parts

-

146

$104.150

-

-

-

Chip1Stop

Japan . 146 parts In-Stock

1+ parts

$918.690

100+ parts

-

1k+ parts

-

10k+ parts

-

146

$918.690

-

-

-

Flip Electronics (Authorized)

USA . 250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

250

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$83.640

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$83.640

-

-

-

Digiode

USA . 2,368 parts In-Stock

1+ parts

$90.374

100+ parts

-

1k+ parts

-

10k+ parts

-

2,368

$90.374

-

-

-

Martec Srl

Italy . 18,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,500

-

-

-

-

Vyrian

USA . 5,312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,312

-

-

-

-

VNN

France . 3,997 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,997

-

-

-

-

Anansix

USA . 1,199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,199

-

-

-

-

Flip Electronics

USA . 250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

250

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 5,262 parts In-Stock

1+ parts

$0.550

100+ parts

-

1k+ parts

-

10k+ parts

-

5,262

$0.550

-

-

-

Corohmni

South Africa . 89 parts In-Stock

1+ parts

$1.071

100+ parts

-

1k+ parts

-

10k+ parts

-

89

$1.071

-

-

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.856

100+ parts

$1.689

1k+ parts

$1.522

10k+ parts

-

5,000

$1.856

$1.689

$1.522

-

AZTECH Wire

Italy . 431 parts In-Stock

1+ parts

$12.307

100+ parts

-

1k+ parts

-

10k+ parts

-

431

$12.307

-

-

-

Ampacity Inc.

Singapore . 149 parts In-Stock

1+ parts

$80.860

100+ parts

-

1k+ parts

-

10k+ parts

-

149

$80.860

-

-

-

Semicontronic

India . 149 parts In-Stock

1+ parts

$80.860

100+ parts

$78.838

1k+ parts

$78.434

10k+ parts

-

149

$80.860

$78.838

$78.434

-

Continental Prestige Electronics

USA . 4,271 parts In-Stock

1+ parts

$83.640

100+ parts

-

1k+ parts

-

10k+ parts

$81.967

4,271

$83.640

-

-

$81.967

Netroflash

USA . 500 parts In-Stock

1+ parts

$83.640

100+ parts

-

1k+ parts

$79.458

10k+ parts

$77.785

500

$83.640

-

$79.458

$77.785

Corphita

USA . 2,009 parts In-Stock

1+ parts

$85.617

100+ parts

-

1k+ parts

-

10k+ parts

-

2,009

$85.617

-

-

-

UNI Independent Distributors

Spain . 7,709 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,709

-

-

-

-

Argo Parts USA

USA . 2,703 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,703

-

-

-

-

Overview

Discover the unmatched quality and performance of the A2V07H400-04NR3 by NXP Semiconductors, a leading manufacturer in the industry. This RF Power Field Effect Transistor (FET) offers exceptional power gain and reliability for amplifier applications in the ultra-high frequency band. With a robust construction and advanced technology, this transistor provides customers with top-notch functionality and efficiency. Elevate your projects with the A2V07H400-04NR3 and experience unparalleled value and benefits that only NXP Semiconductors can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the RF Power FET, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics and higher efficiency compared to P-channel FETs, making this product a good choice for amplification applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this RF Power FET delivers high power gain and excellent performance in amplifying signals.

Minimum DS Breakdown Voltage: 105 V

With a high breakdown voltage, this FET can handle high power levels without getting damaged, ensuring stability and reliability in operation.

Surface Mount: YES

The surface mount capability makes installation and integration of this FET easier and more convenient, especially in compact electronic devices.

Maximum Operating Temperature: 225 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without performance degradation, suitable for high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) A2V07H400-04NR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

105 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFP-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

18.9 dB

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

A2V07H400-04NR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5