Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NE5550979A-T1-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W power dissipation. Ideal for high-frequency applications, it operates up to 150°C, making it suitable for various RF power amplification needs in surface-mount configurations.
Median Price
-
Lifecycle Status
Suppliers In-Stock
2
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Nova Conductors
Aztec Data Supply Inc.
$1.070
AZTECH Wire
$2.230
$2.140
$2.100
$2.060
Ampacity Inc.
$57.050
Continental Prestige Electronics
A-Z Elektronik GmbH
Argo Parts USA
Futuretech Components
Bastille Electronics
Microchip USA
N-CHANNEL FETs are preferred for high power applications due to their lower conduction losses compared to P-CHANNEL FETs.
Single configuration FETs are generally easier to implement and control in circuits compared to parallel configurations.
Surface mount FETs are easier to solder onto circuit boards, making them more suitable for automated manufacturing processes.
The high maximum drain current allows this FET to handle higher power levels without overheating or failing.
With a high maximum power dissipation, this FET can withstand higher power levels and operate reliably under heavy loads.
Metal-Oxide Semiconductor FETs are known for their high input impedance, making them suitable for high-frequency applications and low power consumption.
Being able to operate at 150°C, this FET can withstand high temperatures and is suitable for demanding industrial environments.
RF Power Field Effect Transistors (FET) NE5550979A-T1-A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Renesas Electronics
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
No. of Elements:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
NE5550979A-T1-A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - EOL 12/Aug/2016 EOL Revision 10/Nov/2016
BAV99
Weitron Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Output Current: .215 A; JESD-609 Code: e0; Maximum Forward Voltage (VF): .715 V;
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
CRG0805F10K
TE Connectivity
TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.
SMBJ18CA
Onsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
Db Lectro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV303N
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
2N2222A
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
LM317LMX/NOPB
Texas Instruments
LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
934065121112
NXP Semiconductors
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;
PD84010TR-E
STMicroelectronics
PD84010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
RF5L15030CB2
RF Power Field-Effect Transistors;
BLF888D
Ampleon Netherlands B V
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF171A
M/a-com Technology Solutions
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934061039112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
MRF255
Motorola
MRF255 by Motorola is an N-CHANNEL RF Power FET with 13 dB Gp for AMPLIFIER applications. It operates in ENHANCEMENT MODE at VERY HIGH FREQUENCY BAND, handling up to 22 A ID and dissipating 175 W at max temp of 200 °C.
PD85025TR-E
PD85025TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
A3G26H502W17SR3
NXP Semiconductors A3G26H502W17SR3 is an N-CHANNEL RF FET with 150V DS breakdown voltage, 11.3 dB power gain, and GaN element material. Primarily used in S Band applications as a depletion mode amplifier with flatpack package style for surface mount assembly.
PTVA101K02EVP1
Wolfspeed
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PD57045
STMicroelectronics PD57045 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications at Ultra High Frequency Band. With a max ID of 5A and operating temperature of 165 °C, it features GULL WING terminals in a SMALL OUTLINE package.
MRF7P20040HSR3
NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.
PD60004
PD60004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in the L band, and supports surface mount with a compact SO package. This transistor excels in high-frequency performance up to 165 °C.
MW6S004NT1
The NXP Semiconductors MW6S004NT1 is a single N-channel RF Power FET with a 68V DS breakdown voltage. It operates in enhancement mode, suitable for amplifier applications in the L band. This transistor features a small outline package, metal-oxide semiconductor technology, and can withstand temperatures up to 150°C.
NE5550234-T1-AZ
Renesas Electronics
NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.
A2T08VD021NT1
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: Tin (Sn);
MRFE6VP5300NR1
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN;
BLF647P,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4; Transistor Application: AMPLIFIER;
ATF-50189-BLK
Broadcom
Broadcom's ATF-50189-BLK is an N-channel RF FET with 7V DS breakdown voltage, 14dB power gain, and operating mode in enhancement. Ideal for C band applications, this transistor has a max drain current of 1A and operates at up to 150°C temperature.
STAP85025S
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NE5550779A-T1-A
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NE5550979A-A
NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.
NE5550779A-A
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; No. of Elements: 1; Maximum Drain Current (ID): 2.1 A; Maximum Operating Temperature: 150 Cel;
NE5550234-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Maximum Drain Current (ID): .6 A; No. of Elements: 1;
NE5520279A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; No. of Terminals: 4; JESD-609 Code: e6;
NE5510279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: TIN LEAD; Transistor Application: AMPLIFIER;
NE5520279A-T1A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Highest Frequency Band: L BAND; Package Shape: RECTANGULAR;
NE5520279A-T1A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Qualification: Not Qualified;
NE5500179A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Case Connection: SOURCE; Qualification: Not Qualified;
NE5500479A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Position: QUAD; No. of Terminals: 4;
NE5511279A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3 A; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
NE5520279A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: SOURCE; Transistor Element Material: SILICON;
NE5510179A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Terminal Form: FLAT; Highest Frequency Band: L BAND;
NE5520279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Case Connection: SOURCE; Terminal Finish: TIN LEAD;
NE5500479A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; JESD-30 Code: R-XQMW-F4; Terminal Form: FLAT;
NE5511279A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 3 A; Package Body Material: UNSPECIFIED;
NE5500479A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; No. of Terminals: 4; Package Shape: RECTANGULAR;
NE5511279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Style (Meter): MICROWAVE; Package Shape: RECTANGULAR;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved