Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Case Connection: SOURCE; Terminal Finish: TIN LEAD;
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RF Power Field Effect Transistors (FET) NE5520279A-T1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Renesas Electronics
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NE5520279A-T1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
2N2222A
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
SS14
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
SS495A-SP
Honeywell Sensing And Control
SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
C1206C104K5RACTU
KEMET Corporation
KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
4554
Jw Miller Magnetics
Other Semiconductors;
FDLL4148
National Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
LL4148
Daco Semiconductor
LM555CN
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
1N4148
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358MX
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Intersil
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ST50V10200
RF Power Field-Effect Transistors;
934065978112
NXP Semiconductors
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
D1020UK
Tt Electronics Plc
D1020UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a max ID of 25A and a 200°C operating temperature. Commonly used as an amplifier, it has a metal-oxide semiconductor technology and gold terminal finish for high-performance applications.
MRF8P20165WHSR5
Freescale Semiconductor
MRF8P20165WHSR5 by Freescale is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the S BAND, has a 65V DS Breakdown Voltage, and can be used as an AMPLIFIER. The package is RECTANGULAR, made of CERAMIC/METAL, and supports surface mount technology.
BLF246B,112
NXP Semiconductors BLF246B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 130W and operates in enhancement mode up to 200°C.
PD57030S-E
PD57030S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.
934061844112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDSO-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2900
SD2900 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 0.9A. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE and SILICON element material.
PD85006-E
PD85006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 36.5 W.
BLF6G15LS-500H
BLF6G15LS-500H by NXP is an N-channel RF power FET designed for switching applications. It features a max drain current of 45 A, a breakdown voltage of 100 V, and operates in the L band. Its flatpack design ensures efficient surface mounting in various electronic devices.
BLF645,112
Ampleon Netherlands B V
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Shape: RECTANGULAR;
SD56120
SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
A2T18S260-12SR3
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
SD2943
SD2943 by STMicroelectronics is an N-CHANNEL RF Power FET with a 130V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 40A and 648W power dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and SOURCE case connection.
PD54003-01
PD54003-01 by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a 25V min breakdown voltage, 4A max drain current, and operates in enhancement mode. This compact chip carrier design ensures efficient performance in demanding environments.
A2T18S162W31GSR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
ARF463AP1G
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;
MGF2430A-01
Mitsubishi Electric
Mitsubishi Electric's MGF2430A-01 is an N-channel RF Power FET with a single configuration for amplifier applications. Operating in depletion mode, it offers a min power gain of 5.5 dB and can handle up to 0.8 A drain current at a max dissipation of 5 W. Ideal for Ku band frequencies, this transistor features a ceramic-metal-sealed co-fired package body and flat terminal form for surface mount applications.
934065695118
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
SD57045
SD57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
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NE5550234-T1-AZ
Renesas Electronics
NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.
NE5550979A-T1-A
NE5550979A-T1-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W power dissipation. Ideal for high-frequency applications, it operates up to 150°C, making it suitable for various RF power amplification needs in surface-mount configurations.
NE5550779A-T1-A
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NE5550979A-A
NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.
NE5550779A-A
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; No. of Elements: 1; Maximum Drain Current (ID): 2.1 A; Maximum Operating Temperature: 150 Cel;
NE5550234-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Maximum Drain Current (ID): .6 A; No. of Elements: 1;
NE5520279A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; No. of Terminals: 4; JESD-609 Code: e6;
NE5510279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: TIN LEAD; Transistor Application: AMPLIFIER;
NE5520279A-T1A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Highest Frequency Band: L BAND; Package Shape: RECTANGULAR;
NE5520279A-T1A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Qualification: Not Qualified;
NE5500179A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Case Connection: SOURCE; Qualification: Not Qualified;
NE5500479A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Position: QUAD; No. of Terminals: 4;
NE5511279A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3 A; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
NE5520279A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: SOURCE; Transistor Element Material: SILICON;
NE5510179A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Terminal Form: FLAT; Highest Frequency Band: L BAND;
NE5500479A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; JESD-30 Code: R-XQMW-F4; Terminal Form: FLAT;
NE5511279A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 3 A; Package Body Material: UNSPECIFIED;
NE5500479A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; No. of Terminals: 4; Package Shape: RECTANGULAR;
NE5511279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Style (Meter): MICROWAVE; Package Shape: RECTANGULAR;
Nec Compound Semiconductor Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: L BAND; JESD-30 Code: R-XQMW-F4;
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