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TGI1314-50L

Toshiba

TGI1314-50L by Toshiba

Toshiba's TGI1314-50L is an N-channel RF Power FET with 50V DS breakdown voltage, ideal for KU band applications. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 15A drain current and 140W power dissipation at max 175°C temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.358

100+ parts

$1.236

1k+ parts

$1.114

10k+ parts

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50

$1.358

$1.236

$1.114

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Ampacity Inc.

Singapore . 303 parts In-Stock

1+ parts

$53.050

100+ parts

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303

$53.050

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Argo Parts USA

USA . 4,290 parts In-Stock

1+ parts

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100+ parts

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4,290

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Continental Prestige Electronics

USA . 3,972 parts In-Stock

1+ parts

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3,972

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Overview

Unleash the power of cutting-edge technology with the TGI1314-50L by Toshiba, a top-of-the-line RF Power Field Effect Transistor. With a solid reputation for quality and innovation, Toshiba delivers a product that exceeds expectations in the KU BAND frequency range. Perfect for applications requiring high performance and reliability, this transistor offers unmatched efficiency and power output. Experience the difference with Toshiba's TGI1314-50L – where excellence meets value.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body material ensures high durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL type FETs typically offer better performance in terms of power handling and efficiency compared to P-CHANNEL types.

Configuration: SINGLE

Single configuration simplifies the circuit design and integration process, making it easier to use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration onto circuit boards, saving space and simplifying assembly.

Highest Frequency Band: KU BAND

Designed for use in the KU band frequency range, making it ideal for satellite communication and other high-frequency applications.

Maximum Power Dissipation Ambient: 140 W

With a high maximum power dissipation rating, this FET can effectively handle power and maintain performance in demanding environments.

Transistor Element Material: GALLIUM NITRIDE

The use of gallium nitride material in the transistor element offers superior performance in terms of power efficiency and thermal management.

Technical Specifications

RF Power Field Effect Transistors (FET) TGI1314-50L attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

15 A

Maximum Drain Current (ID):

15 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

140 W

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signals

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

TGI1314-50L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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