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NE5511279A-A

Renesas Electronics

NE5511279A-A by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 3 A; Package Body Material: UNSPECIFIED;

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USA . 47 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) NE5511279A-A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-XQMW-F4

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROWAVE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE5511279A-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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