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TGF2023-2-02

Qorvo

TGF2023-2-02 by Qorvo

Qorvo's TGF2023-2-02 is an N-channel RF Power FET for amplifier applications in KU band. Featuring GaN technology, it has a max ID of 2.5A and operates in depletion mode. This single-configured transistor is surface-mountable with Ni/Au terminal finish.

Median Price

$67.840

Lifecycle Status

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< 1k

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RFMW

USA . 97 parts In-Stock

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$67.840

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$38.330

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97

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$38.330

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Nova Conductors

Japan . 100 parts In-Stock

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$38.725

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$38.725

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Vyrian

USA . 229 parts In-Stock

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Cogito LLC

Ukraine . 40 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$1.965

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$1.946

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$1.867

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10

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$1.867

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AZTECH Wire

Italy . 753 parts In-Stock

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Continental Prestige Electronics

USA . 3,521 parts In-Stock

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$37.950

3,521

$38.725

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$37.950

Netroflash

USA . 1,000 parts In-Stock

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$38.725

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$38.725

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Argo Parts USA

USA . 3,677 parts In-Stock

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Perfect Parts

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Overview

Experience unparalleled performance with the TGF2023-2-02 by Qorvo, a top-tier manufacturer known for cutting-edge RF Power Field Effect Transistors. This N-CHANNEL single configuration transistor is perfect for amplifier applications in the KU BAND, offering high electron mobility technology with Gallium Nitride material. With surface mount capability and a nickel/gold terminal finish, this product ensures seamless integration and optimal functionality. Elevate your projects with the TGF2023-2-02's superior quality and reliability, setting you apart from the competition.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have higher electron mobility and lower ON resistance, making them suitable for high frequency and high power applications.

Transistor Application: AMPLIFIER

Being designed specifically for amplification purposes, this transistor will provide high gain and low noise performance in amplifier circuits.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology ensures efficient electron flow and improved performance in high frequency applications.

Transistor Element Material: GALLIUM NITRIDE

Gallium Nitride offers high electron mobility and thermal stability, making it ideal for power applications in Ku band frequency range.

Terminal Finish: Nickel/Gold (Ni/Au)

Nickel/Gold terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable performance and longevity.

Technical Specifications

RF Power Field Effect Transistors (FET) TGF2023-2-02 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Qorvo

Specs

Configuration:

Maximum Drain Current (ID):

2.5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-XUUC-N3

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Nickel/Gold (Ni/Au)

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

TGF2023-2-02 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Qorvo

Your car. Your smartphone. Your wrist. Your heart. Even outer space. Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power management markets. Transforming the way you live, work, play and communicate — that's what inspires us. Innovation. Product Leadership. Scale. Speed. At Qorvo, we are driven by the possibility of discovery — of new RF and power technologies and advancements in design, manufacturing and communications that make the world a better, cleaner and more connected place. We've been working on that for more than 30 years, both as innovators and as stewards of our planet. And we are just getting started.

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