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GS61008T-TR

Gan Systems

GS61008T-TR by Gan Systems

GS61008T-TR by Gan Systems is a N-channel RF FET with 100V DS breakdown voltage, ideal for switching applications. Operating in enhancement mode, it offers 90A ID and operates at -55°C. Utilizing GaN technology, it features a plastic/epoxy package and is surface mountable for very high frequency band applications.

Median Price

$6.880

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,509 parts In-Stock

1+ parts

$9.380

100+ parts

$5.810

1k+ parts

$5.210

10k+ parts

$4.420

1,509

$9.380

$5.810

$5.210

$4.420

Verical

USA . 39,000 parts In-Stock

1+ parts

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$5.750

39,000

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$5.750

Chip1Stop

Japan . 39,000 parts In-Stock

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$6.880

39,000

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$6.880

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Nova Conductors

Japan . 20 parts In-Stock

1+ parts

$7.100

100+ parts

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20

$7.100

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Vyrian

USA . 26,194 parts In-Stock

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26,194

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Sensible Micro Corp

USA . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,360 parts In-Stock

1+ parts

$1.390

100+ parts

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1,360

$1.390

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Continental Prestige Electronics

USA . 2,168 parts In-Stock

1+ parts

$7.100

100+ parts

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$6.958

2,168

$7.100

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$6.958

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$7.100

100+ parts

$6.958

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2,000

$7.100

$6.958

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Argo Parts USA

USA . 2,176 parts In-Stock

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2,176

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Advanced Electronics

New Zealand . 53 parts In-Stock

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Overview

Elevate your RF power applications with the GS61008T-TR by Gan Systems. Known for their superior quality and cutting-edge technology, Gan Systems delivers top-of-the-line RF Power FETs that are ideal for switching applications in the very high-frequency band. Designed with Gallium Nitride technology, this enhancement mode transistor offers a maximum drain current of 90A and a minimum DS breakdown voltage of 100V, ensuring reliable performance in any operating environment. Upgrade your systems today and experience the unmatched value and benefits that Gan Systems has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer lower ON-resistance and higher electron mobility, making them ideal for high power applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 100 V

The high breakdown voltage makes this transistor suitable for applications requiring high voltage handling capabilities.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance.

Maximum Drain Current (ID): 90 A

With a high maximum drain current, this transistor can handle high power levels, making it suitable for high current applications.

Technical Specifications

RF Power Field Effect Transistors (FET) GS61008T-TR attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Gan Systems

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

90 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PBCC-N4

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

GOLD OVER NICKEL

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

GS61008T-TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Gan Systems

We live in a data and energy driven world increasingly defined by power-reliant industries including data centers, electric vehicles, renewable energy systems, industrial motors, and consumer electronics. These businesses have long faced formidable and universal challenges around energy wasted in power conversion, as well as the size limitations placed on overall product design by the old generation ecosystem of power system components. Yesterday’s silicon has reached its limits. GaN technology is the clear and undisputed solution for today and tomorrow. GaN Systems’ approach to a new generation of GaN power transistors is leading an industry-changing shift in both the short-term and ‘near future’ relationship between technology’s power systems and energy–creating significant product and system-wide changes. Design engineers are building power systems that are: · one-quarter the power loss · one-quarter the size · one-quarter the weight · and less expensive than silicon-based solutions For corporate leaders, GaN not only changes their company’s immediate relationship with power; it can alter the competitive trajectory of the entire business through the creation of whole new classes of products, systems, and sustainability initiatives.

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