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GS61004B-MR

Gan Systems

GS61004B-MR by Gan Systems

GS61004B-MR by Gan Systems is an N-CHANNEL RF FET with 100V DS breakdown voltage, 45A ID, and -55°C min. operating temp. Ideal for SWITCHING applications in ENHANCEMENT MODE, this PLASTIC/EPOXY chip carrier FET offers SOURCE case connection and GOLD over NICKEL terminal finish.

Median Price

$4.485

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Chip1Stop

Japan . 696 parts In-Stock

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$4.390

100+ parts

$3.610

1k+ parts

$3.370

10k+ parts

$3.240

696

$4.390

$3.610

$3.370

$3.240

Mouser Electronics

USA . 2,849 parts In-Stock

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$4.580

100+ parts

$3.260

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$2.360

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$2.220

2,849

$4.580

$3.260

$2.360

$2.220

DigiKey

USA . 194 parts In-Stock

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$5.650

100+ parts

$2.706

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$2.161

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$2.138

194

$5.650

$2.706

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$2.138

Verical

USA . 250 parts In-Stock

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$4.150

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

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Elcom Components

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Aztec Data Supply Inc.

USA . 3,405 parts In-Stock

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$0.760

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Continental Prestige Electronics

USA . 6,330 parts In-Stock

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$3.810

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$3.734

6,330

$3.810

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Argo Parts USA

USA . 4,050 parts In-Stock

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$3.810

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$4.187

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$4.187

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$4.187

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$4.187

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Overview

GaN Systems GS61004B 100V Enhancement Mode GaN Transistor has a 100V enhancement mode power switch and are housed in a low inductance GaNPX™ package. The GS61004B have reverse current capability, zero reverse recovery loss and are RoHS 6 compliant. Typical applications are for 48V DC-DC conversions, AC-DC (secondary side synch. rectification), VHF very small form-factor adapters, appliances and power tools and 48V motor drives.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Epoxy packaging provides good protection and durability for the transistor, ensuring it can withstand harsh environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors have better performance characteristics compared to P-channel transistors, making them a preferred choice for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Surface Mount: YES

Surface mount design allows for easy and convenient mounting on PCBs, saving space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, ensuring reliable performance in demanding applications.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts and makes it easy to incorporate this transistor into existing designs.

Terminal Form: NO LEAD

Lead-free terminals are environmentally friendly and comply with RoHS regulations, making this transistor a more sustainable choice.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the transistor's operation, providing improved efficiency and performance.

No. of Terminals: 3

With a standard 3-terminal configuration, this transistor is easy to interface with other components and can be easily integrated into circuit designs.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers good thermal performance and helps dissipate heat efficiently, ensuring stable operation of the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds and low power consumption, making this transistor suitable for high-frequency applications.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance, making them a popular choice for a wide range of electronic applications.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can operate reliably in cold environments without any performance degradation.

Terminal Finish: GOLD OVER NICKEL

Gold over nickel terminals provide excellent conductivity and corrosion resistance, ensuring long-term reliability and stable performance.

Maximum Drain Current (ID): 45 A

High maximum drain current rating allows this transistor to handle high current loads, making it suitable for power applications that require high current capabilities.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easy PCB mounting and facilitates efficient heat dissipation, ensuring optimal performance in various applications.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates that this transistor has a moderate level of moisture sensitivity, making it suitable for storage and use in various environmental conditions.

Case Connection: SOURCE

Source connection provides a common ground reference for the transistor, simplifying circuit design and ensuring stable operation in various applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor can withstand high-temperature reflow processes during assembly without any adverse effects on performance.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable solder connections and proper mounting of the transistor during assembly, ensuring long-term performance and stability.

Technical Specifications

RF Power Field Effect Transistors (FET) GS61004B-MR attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Gan Systems

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

45 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

GOLD OVER NICKEL

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

GS61004B-MR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Gan Systems

We live in a data and energy driven world increasingly defined by power-reliant industries including data centers, electric vehicles, renewable energy systems, industrial motors, and consumer electronics. These businesses have long faced formidable and universal challenges around energy wasted in power conversion, as well as the size limitations placed on overall product design by the old generation ecosystem of power system components. Yesterday’s silicon has reached its limits. GaN technology is the clear and undisputed solution for today and tomorrow. GaN Systems’ approach to a new generation of GaN power transistors is leading an industry-changing shift in both the short-term and ‘near future’ relationship between technology’s power systems and energy–creating significant product and system-wide changes. Design engineers are building power systems that are: · one-quarter the power loss · one-quarter the size · one-quarter the weight · and less expensive than silicon-based solutions For corporate leaders, GaN not only changes their company’s immediate relationship with power; it can alter the competitive trajectory of the entire business through the creation of whole new classes of products, systems, and sustainability initiatives.

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