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TGF2023-2-05

Qorvo

TGF2023-2-05 by Qorvo

Qorvo's TGF2023-2-05 is a N-CHANNEL RF Power FET with 17.6 dB Gp for KU BAND applications. Operating in DEPLETION MODE, it has 5A ID and uses GALLIUM NITRIDE technology. This SINGLE configuration transistor is surface mountable and has a RECTANGULAR package shape.

Median Price

$124.140

Lifecycle Status

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< 1k

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RFMW

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Nova Conductors

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Chip Stock

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225

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Vyrian

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AZTECH Wire

Italy . 438 parts In-Stock

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Continental Prestige Electronics

USA . 5,260 parts In-Stock

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$51.097

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Argo Parts USA

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Bastille Electronics

Australia . 650 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the TGF2023-2-05 by Qorvo. This RF Power Field Effect Transistor (FET) offers unparalleled quality and performance, making it ideal for amplifier applications in the KU band. With a single configuration and high power gain, this N-channel transistor delivers exceptional value and reliability. Trust Qorvo, a leading manufacturer in the industry, to provide you with top-notch products that will take your projects to the next level. Upgrade your RF systems with the TGF2023-2-05 and experience the difference today!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and better performance than P-channel transistors, making this product a good choice for high-frequency applications.

Minimum Power Gain (Gp): 17.6 dB

The high minimum power gain indicates that this transistor can amplify signals effectively, making it suitable for amplifier applications.

Maximum Drain Current (ID): 5 A

With a high maximum drain current, this transistor can handle high power levels without overheating, ensuring reliable operation.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology allows for faster switching speeds and lower power consumption, making this transistor ideal for high-performance applications.

Transistor Element Material: GALLIUM NITRIDE

Gallium Nitride transistors offer high electron mobility and low on-resistance, resulting in improved efficiency and reliability for RF power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) TGF2023-2-05 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Qorvo

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-XUUC-N5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

17.6 dB

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

TGF2023-2-05 Transistors trade compliance attributes, and parameters.

ECCN

3A001.B.3.B.4

ECCN Governance

EAR

Manufacturer Highlights

Qorvo

Your car. Your smartphone. Your wrist. Your heart. Even outer space. Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power management markets. Transforming the way you live, work, play and communicate — that's what inspires us. Innovation. Product Leadership. Scale. Speed. At Qorvo, we are driven by the possibility of discovery — of new RF and power technologies and advancements in design, manufacturing and communications that make the world a better, cleaner and more connected place. We've been working on that for more than 30 years, both as innovators and as stewards of our planet. And we are just getting started.

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