Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NE5550779A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 2.1A max drain current and 17.8W power dissipation. Ideal for high-power applications in METAL-OXIDE SEMICONDUCTOR technology, it operates up to 150°C, making it suitable for various RF power amplification needs.
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Bastille Electronics
N-CHANNEL FETs typically provide lower on-resistance and higher transconductance compared to P-CHANNEL FETs, making them ideal for high-performance applications.
Single-channel configuration simplifies circuit design and reduces board space requirements, making it easier to integrate into various systems.
With a high maximum drain current rating of 2.1 A, this FET can handle large current loads, making it suitable for power amplifier applications.
The high maximum power dissipation of 17.8 W allows for efficient heat dissipation, enabling the FET to operate reliably at high power levels.
Metal-oxide semiconductor technology offers high reliability and performance, making this FET suitable for demanding RF power applications.
With a maximum operating temperature of 150°C, this FET can withstand high-temperature environments, ensuring reliable performance in a wide range of conditions.
RF Power Field Effect Transistors (FET) NE5550779A-A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Renesas Electronics
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
No. of Elements:
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Sub-Category:
NE5550779A-A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - EOL 12/Aug/2016 EOL Revision 10/Nov/2016
C1206C104K5RACTU
KEMET Corporation
KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32H743IIT6
STMicroelectronics
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
SMBJ18CA
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56-351
Carlisle Interconnect Technologies
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;
SS14
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS3303C
Idec
ROTARY SWITCH;
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
MBRS130LT3G
Onsemi
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
LM7805CT
Integrated Circuit Technology
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
1N4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
PD55025STR-E
STMicroelectronics' PD55025STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 7A ID, and operates in ENHANCEMENT MODE at up to 165°C.
PD55025-E
STMicroelectronics PD55025-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 79W Power Dissipation. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
CLF1G0035-100
Ampleon Netherlands B V
RF Power Field-Effect Transistors;
RF2L42008CG2
A2T27S020GNR1
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
MRF300AN-144MHZ
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
LET9120
LET9120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, breakdown voltage of 80 V, and operates in the L band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 200 W.
LET9070CB
PTVA101K02EVP1
Infineon Technologies
Infineon's PTVA101K02EVP1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, suitable for L BAND applications. It features COMMON SOURCE configuration, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE. This FLANGE MOUNT transistor has a max temp of 200°C and is ideal for AMPLIFIER use.
PD85025-E
PD85025-E by STMicroelectronics is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE up to 165°C.
934056639112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT;
MRF8P29300HR6
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A2T26H300-24SR6
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLL6H1214-500,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Case Connection: SOURCE; Maximum Drain Current (ID): 45 A;
MRF300BN
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
AFT09MS031GNR1
AFT09MS031GNR1 by NXP Semiconductors is an N-CHANNEL RF Power FET with 317W power dissipation, suitable for surface mount applications. It operates at a max temp of 150°C and features metal-oxide semiconductor technology. Ideal for high-power RF amplifiers in various electronic devices.
SD57045
SD57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
934065317112
N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Terminal Position: DUAL; Case Connection: SOURCE;
PD57070S
PD57070S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.
PTVA101K02EVV1
Wolfspeed
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NE5550234-T1-AZ
Renesas Electronics
NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.
NE5550979A-T1-A
NE5550979A-T1-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W power dissipation. Ideal for high-frequency applications, it operates up to 150°C, making it suitable for various RF power amplification needs in surface-mount configurations.
NE5550779A-T1-A
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NE5550979A-A
NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.
NE5550234-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Maximum Drain Current (ID): .6 A; No. of Elements: 1;
NE5520279A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; No. of Terminals: 4; JESD-609 Code: e6;
NE5510279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: TIN LEAD; Transistor Application: AMPLIFIER;
NE5520279A-T1A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Highest Frequency Band: L BAND; Package Shape: RECTANGULAR;
NE5520279A-T1A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Qualification: Not Qualified;
NE5500179A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Case Connection: SOURCE; Qualification: Not Qualified;
NE5500479A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Position: QUAD; No. of Terminals: 4;
NE5511279A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3 A; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
NE5520279A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: SOURCE; Transistor Element Material: SILICON;
NE5510179A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Terminal Form: FLAT; Highest Frequency Band: L BAND;
NE5520279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Case Connection: SOURCE; Terminal Finish: TIN LEAD;
NE5500479A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; JESD-30 Code: R-XQMW-F4; Terminal Form: FLAT;
NE5511279A-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 3 A; Package Body Material: UNSPECIFIED;
NE5500479A-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; No. of Terminals: 4; Package Shape: RECTANGULAR;
NE5511279A-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Style (Meter): MICROWAVE; Package Shape: RECTANGULAR;
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