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SD57045

STMicroelectronics

SD57045 by STMicroelectronics

SD57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.

Median Price

$100.990

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 50 parts In-Stock

1+ parts

$94.530

100+ parts

$87.170

1k+ parts

$86.740

10k+ parts

-

50

$94.530

$87.170

$86.740

-

Verical

USA . 50 parts In-Stock

1+ parts

$94.530

100+ parts

$87.170

1k+ parts

$86.740

10k+ parts

-

50

$94.530

$87.170

$86.740

-

Mouser Electronics

USA . 51 parts In-Stock

1+ parts

$100.990

100+ parts

$77.940

1k+ parts

-

10k+ parts

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51

$100.990

$77.940

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-

DigiKey

USA . 29 parts In-Stock

1+ parts

$100.990

100+ parts

$76.001

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-

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29

$100.990

$76.001

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Newark

USA . 178 parts In-Stock

1+ parts

$126.890

100+ parts

$103.850

1k+ parts

-

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178

$126.890

$103.850

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,423 parts In-Stock

1+ parts

$85.462

100+ parts

-

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3,423

$85.462

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Vyrian

USA . 4,601 parts In-Stock

1+ parts

-

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4,601

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Anansix

USA . 1,296 parts In-Stock

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1,296

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 236 parts In-Stock

1+ parts

$0.928

100+ parts

-

1k+ parts

$0.835

10k+ parts

-

236

$0.928

-

$0.835

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MKK Technologies

India . 2,236 parts In-Stock

1+ parts

$1.746

100+ parts

-

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2,236

$1.746

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DigiPath Technology Company

USA . 2,236 parts In-Stock

1+ parts

$1.746

100+ parts

-

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2,236

$1.746

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Corphita

USA . 2,952 parts In-Stock

1+ parts

$80.964

100+ parts

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2,952

$80.964

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Microchip USA

USA . 6,206 parts In-Stock

1+ parts

$203.389

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6,206

$203.389

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Perfect Parts

USA . 3,537 parts In-Stock

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3,537

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Parana Technologies

USA . 89 parts In-Stock

1+ parts

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100+ parts

$1.110

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89

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$1.110

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iodParts Technologies Inc.

India . 12 parts In-Stock

1+ parts

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12

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Overview

Unlock unparalleled performance with the SD57045 from STMicroelectronics, a leader in innovation and reliability. This N-channel RF Power FET is engineered for high-frequency amplification, making it ideal for demanding applications in telecommunications and broadcasting. With its robust construction and superior thermal management, you can trust the SD57045 to deliver consistent results while enhancing efficiency. Experience the power of quality design and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection against environmental factors and enhances durability, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer higher efficiency and faster switching speeds, making this product ideal for high-performance applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in a variety of RF applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor excels in boosting signal strength, which is crucial for RF applications.

Surface Mount: YES

Surface mount technology allows for smaller, more compact circuit designs, enhancing overall efficiency and space-saving in PCB layouts.

Minimum DS Breakdown Voltage: 65 V

A minimum breakdown voltage of 65V indicates robust voltage handling capabilities, ensuring reliable performance in demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape is efficient for stackable designs and optimal thermal management, promoting better performance in RF applications.

Terminal Form: FLAT

Flat terminals enhance soldering compatibility, ensuring reliable connections and simplifying the assembly process.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for low power consumption and excellent linearity, making it suitable for RF amplification tasks.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the UHF band, this transistor meets the demands of high-frequency RF communications, ensuring effective signal processing.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current of 5 A, this transistor can handle substantial power loads, making it suitable for high-performance RF applications.

No. of Terminals: 2

Featuring 2 terminals simplifies connections and reduces complexity in circuit designs, making it user-friendly and efficient.

Package Style (Meter): FLANGE MOUNT

The flange mount style aids in secure installation, providing stability in various operational environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology results in low power consumption and enhanced efficiency, ideal for RF applications that prioritize performance.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature of 200 °C offers reliability and performance stability under harsh environmental conditions.

Transistor Element Material: SILICON

Silicon as the element material ensures good electronic properties, making this transistor suitable for high-frequency and high-power applications.

Maximum Drain Current (ID): 5 A

The ability to handle a maximum drain current of 5 A reinforces the product's capability to perform under power-intensive conditions.

Terminal Position: DUAL

Dual terminal positions enhance layout flexibility, aiding in versatile integration into different circuit designs.

Case Connection: SOURCE

With source case connection, this design optimizes the flow of electrical current, enhancing the overall efficiency of the transistor.

Technical Specifications

RF Power Field Effect Transistors (FET) SD57045 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD57045 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-626-6365, 5961016266365

NIIN

016266365

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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