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SD57045-01

STMicroelectronics

SD57045-01 by STMicroelectronics

SD57045-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 200 °C.

Median Price

$58.802

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$59.036

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100

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$59.036

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Verical

USA . 100 parts In-Stock

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100+ parts

$58.568

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100

-

$58.568

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Distributors (In-Stock)

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Digiode

USA . 343 parts In-Stock

1+ parts

$69.274

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343

$69.274

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Vyrian

USA . 8,562 parts In-Stock

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8,562

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Anansix

USA . 413 parts In-Stock

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413

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TME

Poland . 100 parts In-Stock

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$82.050

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100

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$82.050

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,065 parts In-Stock

1+ parts

$1.708

100+ parts

-

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$1.538

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-

2,065

$1.708

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$1.538

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MKK Technologies

India . 320 parts In-Stock

1+ parts

$3.213

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320

$3.213

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DigiPath Technology Company

USA . 320 parts In-Stock

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$3.213

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320

$3.213

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AZTECH Wire

Italy . 383 parts In-Stock

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$12.540

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383

$12.540

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Ampacity Inc.

Singapore . 100 parts In-Stock

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$57.560

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100

$57.560

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Corphita

USA . 2,731 parts In-Stock

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$65.628

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2,731

$65.628

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Component Stockers USA

USA . 141 parts In-Stock

1+ parts

$68.860

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$58.970

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141

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$58.970

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Microchip USA

USA . 5,047 parts In-Stock

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$154.456

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5,047

$154.456

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Parana Technologies

USA . 1,399 parts In-Stock

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$2.043

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1,399

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$2.043

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Perfect Parts

USA . 168 parts In-Stock

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168

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Overview

Unlock the power of innovation with the SD57045-01 from STMicroelectronics, a leading name in semiconductor solutions. This high-quality RF Power FET excels in amplifier applications, delivering exceptional performance in ultra-high frequency bands. Its robust design ensures reliability and efficiency, making it ideal for various electronic applications. Experience unmatched value and superior output that enhances your projects, backed by ST's commitment to excellence and cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making the FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics, with lower on-resistance and higher electron mobility, enhancing efficiency in amplifier applications.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, allowing for compact layouts and reduced complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET is ideal for use in audio and RF applications, offering excellent signal fidelity.

Surface Mount: YES

Surface mount technology allows for smaller circuit designs and better performance at high frequencies, making this FET suitable for modern compact devices.

Minimum DS Breakdown Voltage: 65 V

A breakdown voltage of 65 V ensures reliability in high-voltage applications while protecting the circuitry from damage.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy placement on PCBs and efficient thermal management due to a larger surface area.

Terminal Form: FLAT

Flat terminals ensure low inductance and better thermal dissipation, optimizing performance in high-frequency applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for lower power consumption and increased efficiency, ideal for battery-operated devices.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capability to operate in the UHF band makes this FET suitable for advanced communication systems and high-speed data transmission.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current of 5 A, this FET can handle substantial loads, making it versatile for various applications.

No. of Terminals: 2

A minimal terminal count reduces complexity in wiring and enhances reliability in connections.

Package Style (Meter): FLATPACK

The flatpack design allows for efficient space usage on PCBs and aids in heat dissipation, contributing to stable operation at high frequencies.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, which is critical for modern electronic circuitry.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature enhances reliability in extreme environments and grants extended device longevity.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its excellent electrical properties, supporting reliable device performance.

Maximum Drain Current (ID): 5 A

This repeated spec confirms the ability of the FET to handle substantial current loads efficiently in applications.

Terminal Position: DUAL

Dual terminal positioning assists in easy integration into circuit designs, allowing for flexibility in layout options.

Case Connection: SOURCE

A source case connection aids in efficient signal routing and simplifies the design, contributing to overall circuit performance.

Technical Specifications

RF Power Field Effect Transistors (FET) SD57045-01 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD57045-01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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