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SD2932

STMicroelectronics

SD2932 by STMicroelectronics

SD2932 by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 500W. It operates in the ultra-high frequency band, making it ideal for high-power applications like amplifiers and transmitters. The transistor features a metal-oxide semiconductor technology and can withstand temperatures up to 200°C.

Median Price

$146.990

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$146.990

100+ parts

-

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150

$146.990

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Digiode

USA . 4,285 parts In-Stock

1+ parts

-

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4,285

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Anansix

USA . 2,410 parts In-Stock

1+ parts

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2,410

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-

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Vyrian

USA . 876 parts In-Stock

1+ parts

-

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876

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 500 parts In-Stock

1+ parts

$1.453

100+ parts

-

1k+ parts

$1.307

10k+ parts

-

500

$1.453

-

$1.307

-

MKK Technologies

India . 630 parts In-Stock

1+ parts

$2.732

100+ parts

-

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630

$2.732

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DigiPath Technology Company

USA . 630 parts In-Stock

1+ parts

$2.732

100+ parts

-

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630

$2.732

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-

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AZTECH Wire

Italy . 524 parts In-Stock

1+ parts

$8.104

100+ parts

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524

$8.104

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Ampacity Inc.

Singapore . 442 parts In-Stock

1+ parts

$38.050

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442

$38.050

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Continental Prestige Electronics

USA . 6,296 parts In-Stock

1+ parts

$146.990

100+ parts

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10k+ parts

$144.050

6,296

$146.990

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-

$144.050

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$146.990

100+ parts

-

1k+ parts

$139.641

10k+ parts

$136.701

1,000

$146.990

-

$139.641

$136.701

Lixinc

USA . 12,345 parts In-Stock

1+ parts

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12,345

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Parana Technologies

USA . 1,484 parts In-Stock

1+ parts

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100+ parts

$1.737

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1,484

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$1.737

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Argo Parts USA

USA . 1,294 parts In-Stock

1+ parts

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1,294

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Corphita

USA . 643 parts In-Stock

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643

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Overview

Unlock the power of innovation with the SD2932 RF Power Field Effect Transistor by STMicroelectronics. Designed with precision and reliability in mind, this N-CHANNEL transistor offers unparalleled performance in the ultra-high frequency band. Ideal for applications requiring high power dissipation and breakthrough technology, the SD2932 guarantees exceptional quality and efficiency. Experience seamless integration and top-notch functionality with this single configuration transistor, setting new standards in the industry. Elevate your projects with the superior benefits and value that the SD2932 brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for high efficiency and performance in amplifying RF signals.

Configuration: SINGLE

Simplified design and ease of use in circuit integration.

Surface Mount: YES

Facilitates easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 125 V

Ensures reliable operation under high voltage conditions.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

Terminal Form: FLAT

Allows for secure connections and easy soldering.

Operating Mode: ENHANCEMENT MODE

Provides efficient control of the transistor's output power.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency RF applications, ensuring optimal signal performance.

Maximum Drain Current (ID): 40 A

Capable of handling high current levels for power amplification.

No. of Terminals: 4

Simplified connectivity for circuit integration.

Maximum Power Dissipation (Abs): 500 W

Ability to handle high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Allows for convenient mounting in various electronic systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and performance for RF power applications.

Maximum Operating Temperature: 200 °C

Can withstand high temperature environments for reliable operation.

Transistor Element Material: SILICON

Offers excellent performance and reliability for RF power amplification.

Terminal Position: DUAL

Provides flexibility in circuit layout and connectivity.

Case Connection: SOURCE

Enables efficient heat dissipation for optimal performance.

Technical Specifications

RF Power Field Effect Transistors (FET) SD2932 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

125 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

40 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

SD2932 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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