Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD2943 by STMicroelectronics is an N-CHANNEL RF Power FET with a 130V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 40A and 648W power dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and SOURCE case connection.
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The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor, ensuring long-term reliability.
N-channel transistors typically have lower ON-resistance and higher electron mobility, leading to better overall performance in amplification applications.
The single configuration simplifies the circuit design and makes it easier to integrate this transistor into amplifier circuits.
Designed specifically for amplifier applications, this transistor is optimized for high-frequency signal amplification.
The surface-mount capability of this transistor allows for easy and efficient PCB assembly, saving time and resources during manufacturing.
The high breakdown voltage ensures reliability and protection against voltage spikes and fluctuations in the circuit.
The round package shape facilitates easier installation and placement in the circuit, optimizing space usage.
The flat terminal form enables secure connections and reduces the risk of disconnection or short-circuiting.
Enhancement mode transistors offer better control over the amplification process, resulting in higher efficiency and performance.
Ideal for applications requiring ultra-high-frequency signal processing, making it suitable for advanced communication systems.
The high maximum drain current capability allows for handling high-power signals with ease, making it suitable for demanding amplifier applications.
Having four terminals provides flexibility in circuit connections and allows for versatile usage in different amplifier configurations.
The high maximum power dissipation rating ensures the transistor can handle high-power signals without overheating, ensuring long-term reliability.
The flange mount package style offers secure mounting and easy integration in amplifier systems, ensuring stability and reliability in operation.
Metal-oxide semiconductor technology offers high reliability and performance in high-frequency applications, making it an ideal choice for amplifier circuits.
The high maximum operating temperature tolerance allows the transistor to operate in harsh environments without degrading performance, ensuring long-term reliability.
Silicon transistors offer high performance and reliability in amplifier applications, making it a preferred choice for high-frequency signal processing.
The radial terminal position allows for easy circuit connection and secure mounting, ensuring stable operation in amplifier applications.
The source case connection provides a common reference point for the transistor, simplifying circuit design and integration into amplifier systems.
RF Power Field Effect Transistors (FET) SD2943 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics
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SD2943 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
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PCN Assembly/Origin - Mult Dev Site Chg 21/Apr/2020
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Jiangsu Changjiang Electronics Technology
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
SMBJ18CA
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MC33269T-3.3G
Onsemi
MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
1554216002
Molex
WIRE AND CABLE;
1N4148
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
MBR0520LT1
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
ULN2803A
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
LM107H
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
LL4148
Promax-johnton
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
STM32H743IIT6
STMicroelectronics
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
BLF6G27S-45
NXP Semiconductors
The NXP Semiconductors BLF6G27S-45 is an RF Power FET with a 65V DS breakdown voltage and 20A drain current. It operates in enhancement mode, suitable for S band applications like amplifiers. The package is ceramic-metal sealed co-fired, flatpack style with dual terminals and a max temperature of 150°C.
AFT09MS031GNR1
AFT09MS031GNR1 by NXP Semiconductors is an N-CHANNEL RF Power FET with 317W power dissipation, suitable for surface mount applications. It operates at a max temp of 150°C and features metal-oxide semiconductor technology. Ideal for high-power RF amplifiers in various electronic devices.
SD2941-10
SD2941-10 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 130 V, and can dissipate up to 389 W. Ideal for high-performance amplification in communication systems.
STAC2932FW
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STAP57060
STAP57060 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
934064635112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK;
MRFE6VP6300HR3
NXP Semiconductors' MRFE6VP6300HR3 is an N-CHANNEL RF Power FET with 130V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR and METAL-OXIDE SEMICONDUCTOR technology is used, with a max operating temperature of 225°C.
TGI7785-25L
Toshiba
Toshiba's TGI7785-25L is an N-channel RF Power FET with a 50V DS breakdown voltage, ideal for X-band applications. Featuring a 4.5A drain current and 70W power dissipation, this DEPLETION MODE transistor is designed for amplifier use in high-frequency circuits. Its CERAMIC, METAL-SEALED COFIRED package ensures reliable performance in demanding environments.
934065232112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Package Shape: RECTANGULAR; Case Connection: SOURCE;
TGF4230-EPU
TGF4230-EPU by Texas Instruments is an N-CHANNEL RF Power FET for X BAND applications. Features HETERO-JUNCTION tech with GALLIUM ARSENIDE material. Surface mount, 4 terminals, RECTANGULAR package ideal for high-frequency circuit designs.
CG2H40035F
Wolfspeed
CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.
PD54003S
STMicroelectronics PD54003S is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 4A Drain Current and 52.8W Power Dissipation. Package style is SMALL OUTLINE, made of SILICON with TIN LEAD finish.
MRF300AN-50MHZ
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934061844112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDSO-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD55008STR-E
PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.
934064628112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
933817040112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: RADIAL; Minimum DS Breakdown Voltage: 65 V;
MRFE6VP5150NR1
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 133 V; Moisture Sensitivity Level (MSL): 3; JESD-30 Code: R-PDFM-F4;
NPT1012B
Nitronex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Shape: RECTANGULAR;
PD60030
PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
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SD2932W
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (ID): 40 A; Maximum Drain Current (Abs) (ID): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2932
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SD2942W
SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
SD2931-12MR
SD2931-12MR by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, suitable for Very High Frequency Band applications. Featuring a max ID of 20A and an operating mode of Enhancement Mode, this transistor has a flange mount package style and flat terminal form for easy installation in various RF power applications.
SD2941-10W
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 389 W; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (Abs) (ID): 20 A; Peak Reflow Temperature (C): 250;
SD2931-10W
SD2931-10W by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W at 200°C.
SD2931-12W
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2921-10
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 389 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4;
SD2933
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (Abs) (ID): 40 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
SD2933W
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (ID): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2921
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 219 W; Maximum Drain Current (Abs) (ID): 16 A; Maximum Drain Current (ID): 16 A;
SD2902
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; JESD-30 Code: O-PRFM-F4;
SD2918
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;
SD2923
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (ID): 40 A; No. of Elements: 1;
SD2904
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Drain Current (ID): 5 A; Terminal Form: FLAT;
SD2931
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 292 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2920
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON;
SD2931-10
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 389 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 125 V;
SD2922
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 40 A; JESD-30 Code: R-PDFM-F4;
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