Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD2941-10 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 130 V, and can dissipate up to 389 W. Ideal for high-performance amplification in communication systems.
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$3.169
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AZTECH Wire
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$20.590
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$2.015
The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making this FET suitable for various demanding applications.
N-channel configuration provides higher efficiency and better performance in power applications, making it an optimal choice for RF power amplification.
A single configuration simplifies circuit design, reduces the footprint, and lowers the overall cost, making it easier to implement in RF applications.
Surface mount technology allows for a compact design and efficient manufacturing processes, enhancing the overall performance in electronic circuits.
With a minimum breakdown voltage of 130V, this FET can handle high voltages, making it reliable for high-power RF applications without the risk of breakdown.
The round package shape is ideal for thermal dissipation and allows for better mounting flexibility in various designs.
Flat terminal form ensures good contact with the PCB, which minimizes the risk of connection issues and improves overall reliability.
Enhancement mode operation allows for low power consumption in idle states, making it energy-efficient especially in RF applications.
Capability of operating in the ultra-high frequency band makes this FET ideal for advanced communication systems and RF applications.
A maximum drain current of 20 A allows this FET to handle substantial power loads, making it suitable for high-performance applications.
Having four terminals facilitates various circuit configurations and enhances versatility in design, making it adaptable for different uses.
With a high power dissipation capability of 389 W, this FET is suitable for high-power applications without overheating, ensuring reliability and longevity.
Flange mount style provides robust mechanical support, enhancing thermal management, crucial for high-power applications.
MOS technology offers high switching speeds and efficiency, making it a preferred choice in RF power applications.
Withstanding temperatures up to 200 °C allows this FET to perform reliably in harsh environments, making it suitable for a wide range of applications.
Silicon as the material provides excellent electrical characteristics, ensuring performance stability and reliability in various conditions.
Duplication of maximum drain current specification reinforces its robustness, affirming that this FET can handle high currents effectively.
Radial terminal positions allow for flexible design layouts, enhancing integration in different circuit designs.
Source case connection aids in better thermal management and efficient power delivery, crucial for optimal performance in RF applications.
RF Power Field Effect Transistors (FET) SD2941-10 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics
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SD2941-10 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
1N4148W-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
M39029/58360
Esterline Technologies
CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;
1N4148WS
Bytesonic Electronics
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
Grande Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
SN65HVD234DR
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
ULN2803ADWR
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
SMBJ18CA
Hy Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358M
LET21004
STMicroelectronics
LET21004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates at frequencies in the S band, and supports a max drain current of 1A. Ideal for compact surface mount designs, it excels in high-temperature environments.
934064993118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 65 V; Case Connection: SOURCE;
TGF4212SCCX
TGF4212SCCX by Texas Instruments is an N-CHANNEL RF Power FET for amplifier applications. Operating in DEPLETION MODE, it offers a Min DS Breakdown Voltage of 10V and works in the KU BAND frequency range. This surface-mount transistor uses GALLIUM ARSENIDE technology with 4 terminals in a RECTANGULAR package.
SD2933W
SD2933W by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 648W. It operates at up to 200 °C, making it suitable for high-power applications in surface-mount configurations.
TGI7785-25L
Toshiba
Toshiba's TGI7785-25L is an N-channel RF Power FET with a 50V DS breakdown voltage, ideal for X-band applications. Featuring a 4.5A drain current and 70W power dissipation, this DEPLETION MODE transistor is designed for amplifier use in high-frequency circuits. Its CERAMIC, METAL-SEALED COFIRED package ensures reliable performance in demanding environments.
934065907112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER;
TGF2023-2-05
Qorvo
Qorvo's TGF2023-2-05 is a N-CHANNEL RF Power FET with 17.6 dB Gp for KU BAND applications. Operating in DEPLETION MODE, it has 5A ID and uses GALLIUM NITRIDE technology. This SINGLE configuration transistor is surface mountable and has a RECTANGULAR package shape.
PD54003
STMicroelectronics PD54003 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with 4A Drain Current and 52.8W Power Dissipation. Ideal for amplifier applications, it features a Gull Wing terminal form and small outline package style.
PD57006
PD57006 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
934061276112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F4;
MRF151G
M/a-com Technology Solutions
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 40 A;
BLF178XRS,112
Ampleon Netherlands B V
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
NE5550779A-A
Renesas Electronics
NE5550779A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 2.1A max drain current and 17.8W power dissipation. Ideal for high-power applications in METAL-OXIDE SEMICONDUCTOR technology, it operates up to 150°C, making it suitable for various RF power amplification needs.
TIM1011-8UL
Toshiba's TIM1011-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for X-band applications. Featuring a max drain current of 5.7A and a power dissipation of 40.5W, this transistor operates in depletion mode and has a ceramic-metal-sealed co-fired package body suitable for amplifier configurations.
MW6S010NR1
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Maximum Operating Temperature: 225 Cel; JESD-609 Code: e3;
D2219UK
Tt Electronics Plc
D2219UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This SINGLE configuration transistor has a GULL WING terminal form and can withstand temperatures up to 200°C.
AFT09MS031GNR1
AFT09MS031GNR1 by NXP Semiconductors is an N-CHANNEL RF Power FET with 317W power dissipation, suitable for surface mount applications. It operates at a max temp of 150°C and features metal-oxide semiconductor technology. Ideal for high-power RF amplifiers in various electronic devices.
IXZ210N50L
IXYS Corporation
IXZ210N50L by IXYS is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for amplifier applications. Operating in enhancement mode, it offers 10A max drain current and can handle up to 175°C temperature. This RF transistor has a small outline package style and is suitable for very high frequency band usage.
934056520135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; Terminal Form: FLAT;
STAC4933
STAC4933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in single configuration.
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SD2932W
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (ID): 40 A; Maximum Drain Current (Abs) (ID): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2932
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SD2942W
SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
SD2931-12MR
SD2931-12MR by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, suitable for Very High Frequency Band applications. Featuring a max ID of 20A and an operating mode of Enhancement Mode, this transistor has a flange mount package style and flat terminal form for easy installation in various RF power applications.
SD2941-10W
N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 389 W; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (Abs) (ID): 20 A; Peak Reflow Temperature (C): 250;
SD2931-10W
SD2931-10W by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W at 200°C.
SD2943
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 648 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 40 A;
SD2931-12W
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2921-10
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 389 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4;
SD2933
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (Abs) (ID): 40 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (ID): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2921
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 219 W; Maximum Drain Current (Abs) (ID): 16 A; Maximum Drain Current (ID): 16 A;
SD2902
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; JESD-30 Code: O-PRFM-F4;
SD2918
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;
SD2923
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (ID): 40 A; No. of Elements: 1;
SD2904
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Drain Current (ID): 5 A; Terminal Form: FLAT;
SD2931
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 292 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2920
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON;
SD2931-10
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 389 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 125 V;
SD2922
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 40 A; JESD-30 Code: R-PDFM-F4;
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