Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;
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RF Power Field Effect Transistors (FET) MRF6VP2600HR6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor
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MRF6VP2600HR6 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
STM32H743ZIT6
STMicroelectronics
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
2N2222A
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
ULN2803ADWR
Texas Instruments
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
NDT2955
Onsemi
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
BSS123LT1G
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
SS14
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
LL4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
1N4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Silicon Standard
MRF8HP21130HSR3
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F4;
A2G22S251-01SR3
NXP Semiconductors
NXP Semiconductors A2G22S251-01SR3 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage, 16.2 dB Power Gain for AMPLIFIER applications in S BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE with max temp of 225°C and min temp of -55°C, suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology.
SD56120M
SD56120M by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power environments with a max dissipation of 236 W.
LET20045C
LET20045C by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in L BAND frequency range. With 12A Drain Current and 130W Power Dissipation, it's a high-performance transistor suitable for various RF power amplification needs.
RF2L36075CF2
RF Power Field-Effect Transistors;
MRFE6VP6300HR5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
LET9130
LET9130 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 15 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power scenarios with a dissipation capacity of 217 W.
SD2942
SD2942 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and can dissipate up to 500 W. Ideal for high-performance RF amplification in compact designs.
TRF7000PK
TRF7000PK by Texas Instruments is a single N-channel RF Power FET with 15V DS breakdown voltage and 6A drain current. Ideal for L Band applications, it operates in depletion mode with a max power dissipation of 4W at 175°C ambient temperature.
MW6S010NR1
The NXP Semiconductors MW6S010NR1 is a single-channel RF Power FET with 68V DS breakdown voltage, ideal for amplifier applications in L Band frequencies. Featuring a max power dissipation of 61.4W and operating temperature up to 225°C, this enhancement mode transistor has a plastic/epoxy package body and tin terminal finish for surface mount assembly.
PD55015STR-E
STMicroelectronics' PD55015STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE.
CGH31240F
Wolfspeed
CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.
934064588112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
MRF186
Motorola
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified; Transistor Element Material: SILICON;
934065239112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
934064588118
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4; Transistor Element Material: SILICON;
PD57070STR-E
PD57070STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.
BLF6G27-10G
NXP Semiconductors' BLF6G27-10G is a single N-channel RF Power FET with 65V DS breakdown voltage. It operates in enhancement mode for S band applications, offering 3.5A max drain current and can withstand up to 225°C operating temperature. Ideal for amplifier circuits requiring high-frequency performance.
GS66516B-MR
Gan Systems
GS66516B-MR by Gan Systems is a P-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at 60A ID. This RF transistor in CHIP CARRIER package offers VERY HIGH FREQUENCY performance.
CG2H40010F
Wolfspeed's CG2H40010F is an N-CHANNEL RF FET with 84V DS Breakdown Voltage, 15dB Power Gain for AMPLIFIER applications in C BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE, with max. temp of 150°C and drain current of 1.5A.
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MRF6S20010GNR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 68 V; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40;
MRF6S20010NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Terminal Position: DUAL;
NXP Semiconductors' MRF6S20010NR1 is a RF Power FET with 68V DS breakdown voltage, operating in S Band. It's an N-CHANNEL transistor for amplification, featuring METAL-OXIDE SEMICONDUCTOR tech. Suitable for surface mount applications with max temp of 225°C, ideal for high-frequency amplification needs.
MRF6V10010NR4
NXP's MRF6V10010NR4 is a single N-channel RF FET with 100V DS breakdown voltage, ideal for amplifier applications in L Band. It features a plastic/epoxy package, operates in enhancement mode at up to 200°C, and has a moisture sensitivity level of 3.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
MRF6VP121KHR5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Case Connection: SOURCE;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
MRF6VP2600HR6
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;
MRF6V12250HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 2; Minimum DS Breakdown Voltage: 110 V;
NXP Semiconductors' MRF6V12250HR3 is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 110 V. It operates in ENHANCEMENT MODE at the L BAND frequency, suitable for high-power applications. The package style is FLANGE MOUNT, making it ideal for surface mount configurations.
MRF6VP3450HR5
NXP Semiconductors' MRF6VP3450HR5 is a RF Power FET with 110V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features N-CHANNEL polarity, SINGLE configuration, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max temp of 225°C and comes in a CERAMIC package with FLANGE MOUNT style.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Operating Temperature: 225 Cel;
MRF6VP11KHR5
N-CHANNEL; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
MRF6V12500HSR5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFP-F2;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
MRF6V2150NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): 40;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;
MRF6VP21KHR6
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 110 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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