Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Terminal Position: DUAL;
Median Price
$33.785
Lifecycle Status
Suppliers In-Stock
12
In-Stock Inventory
1k+
Flip Electronics (Authorized)
1+ parts
-
100+ parts
1k+ parts
10k+ parts
Verical
$35.560
Rochester
$32.010
$28.640
$26.950
DigiKey
Digiode
$15.400
Nova Conductors
$31.305
Flip Electronics
Anansix
Vyrian
DigiKey Marketplace
Speed Components Ltd
LWI Electronics Inc
Aztec Data Supply Inc.
$0.613
Corohmni
$0.737
Component Stockers USA
$5.690
$5.410
$5.240
Semicontronic
$13.780
$13.436
$13.367
Corphita
$14.589
Ampacity Inc.
$29.990
Continental Prestige Electronics
$42.780
Microchip USA
$78.710
$77.340
$76.650
$75.970
Lixinc
QUARKTWIN TECHNOLOGY LTD
Metaverse IC Inc.
UNI Independent Distributors
Authorized Procurement Solutions
Argo Parts USA
Perfect Parts
Bastille Electronics
RF Power Field Effect Transistors (FET) MRF6S20010NR1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
MRF6S20010NR1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
PCN Obsolescence/ EOL - Mult Dev EOL 18/Apr/2020
PCN Packaging - All Dev Label Update 15/Dec/2020 Mult Dev Pkg Seal 15/Dec/2020
On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
SMBJ18CA
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
LM358M
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
ULN2003ADR
Texas Instruments
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
1N4148
Won-top Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
AH180-WG-7
Diodes Incorporated
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
1N5819HW-7-F
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
FDN306P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
SS14
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
BAV99
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Comchip Technology
AFT09H310-03SR6
NXP Semiconductors
NXP Semiconductors' AFT09H310-03SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-frequency applications in various industries.
934065122112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
A5G35S004NT6
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
BLF177
Ampleon Netherlands B V
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: IEC-60134; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .3 ohm;
PD57060S
STMicroelectronics
PD57060S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
PD60015
PD60015 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min breakdown voltage, operates in enhancement mode, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
934061039112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
MRF1513NT1
NXP Semiconductors' MRF1513NT1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a 2A Drain Current and 31.2W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.
934056375112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 2.2 A; No. of Terminals: 2;
LET9070CB
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
A2G22S190-01SR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF278
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; No. of Elements: 1;
934064628118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFP-F2;
LET9045C
LET9045C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 108 W.
PD57018
STMicroelectronics PD57018 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max Drain Current of 2.5A and can handle up to 31.7W power dissipation at 165 °C operating temperature.
IXZR08N120
IXYS Corporation
IXZR08N120 by IXYS Corp is an N-CHANNEL FET with 1200V DS breakdown voltage, 8A max drain current, and 250W power dissipation. It's used for switching applications in enhancement mode, featuring a single configuration with built-in diode. Ideal for high-power RF systems due to its isolated case connection and metal-oxide semiconductor technology.
MRFE6S9045NR1
NXP Semiconductors' MRFE6S9045NR1 is a single N-channel RF FET with 66V DS breakdown voltage. Ideal for amplifier applications in the UHF band, it operates in enhancement mode at up to 225°C. This flatpack transistor features metal-oxide semiconductor technology and tin terminal finish for high performance.
PD55015S-E
STMicroelectronics' PD55015S-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 5A Drain Current. The transistor comes in a PLASTIC/EPOXY package, suitable for surface mount with 73W power dissipation capability.
MRF8S21200HSR6
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
LET19060C
LET19060C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 130 W.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MRF6S20010GNR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 68 V; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40;
MRF6S20010NR1
NXP Semiconductors' MRF6S20010NR1 is a RF Power FET with 68V DS breakdown voltage, operating in S Band. It's an N-CHANNEL transistor for amplification, featuring METAL-OXIDE SEMICONDUCTOR tech. Suitable for surface mount applications with max temp of 225°C, ideal for high-frequency amplification needs.
MRF6V10010NR4
NXP's MRF6V10010NR4 is a single N-channel RF FET with 100V DS breakdown voltage, ideal for amplifier applications in L Band. It features a plastic/epoxy package, operates in enhancement mode at up to 200°C, and has a moisture sensitivity level of 3.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
MRF6VP121KHR5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Case Connection: SOURCE;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
MRF6VP2600HR6
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;
MRF6V12250HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 2; Minimum DS Breakdown Voltage: 110 V;
NXP Semiconductors' MRF6V12250HR3 is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 110 V. It operates in ENHANCEMENT MODE at the L BAND frequency, suitable for high-power applications. The package style is FLANGE MOUNT, making it ideal for surface mount configurations.
MRF6VP3450HR5
NXP Semiconductors' MRF6VP3450HR5 is a RF Power FET with 110V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features N-CHANNEL polarity, SINGLE configuration, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max temp of 225°C and comes in a CERAMIC package with FLANGE MOUNT style.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Operating Temperature: 225 Cel;
MRF6VP11KHR5
N-CHANNEL; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
MRF6V12500HSR5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFP-F2;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
MRF6V2150NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): 40;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;
MRF6S21100HR3
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 388 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved