Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STAP85025 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
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$1.477
The use of plastic/epoxy provides durability and resistance to environmental factors, making this transistor reliable for long-term usage.
N-channel FETs are known for higher efficiency and lower on-resistance, which enhances performance in amplification applications.
A single configuration simplifies the design and reduces the space requirement on PCBs, while still providing effective performance.
Designed specifically for amplification, this transistor excels in boosting signal strength, making it suitable for various audio and RF applications.
Surface mount technology allows for compact design and facilitates automated assembly processes, improving manufacturing efficiency.
With a breakdown voltage of 40V, this transistor can handle significant voltages, ensuring operational stability in demanding applications.
The rectangular package shape optimizes space usage, allowing for easier integration into various electronic designs.
Flat terminals contribute to good heat dissipation and ease of soldering, enhancing reliability in high-power applications.
Enhancement mode operation provides improved switching speeds and efficiency, making it ideal for high-frequency applications.
Designed for ultra-high frequency operation, this transistor is suitable for advanced communication systems and RF applications.
With a maximum drain current capacity of 7A, this FET can handle significant power levels, making it suitable for high-performance amplifiers.
A two-terminal design simplifies circuit configurations and reduces potential points of failure.
79W power dissipation capability allows this transistor to handle large signals without overheating, ensuring reliability in high-power applications.
Flange mount design provides secure attachment options, making it ideal for high-stress environments or where mechanical stability is crucial.
MOS technology ensures high efficiency and low power consumption, which is critical for battery-operated and energy-sensitive designs.
A high operating temperature tolerance of 165 °C increases reliability in harsh environments, extending the lifespan of the device.
Silicon is a widely used material for FETs, ensuring good performance, cost-effectiveness, and availability in the market.
Dual terminal positioning provides better circuit connectivity options, facilitating versatile design implementations.
The source connection improves thermal management and facilitates efficient circuit design, essential for high-frequency applications.
RF Power Field Effect Transistors (FET) STAP85025 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics
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STAP85025 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
RC0603JR-070RL
Yageo
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
LL4148
Kec
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99WT1G
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
1N4148
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
ABS25-32.768KHZ-T
Abracon
Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.
FT232RL-REEL
FTDI
FTDI's FT232RL-REEL is a bus controller with 28 terminals, operating at 3.3V to 5.25V. It supports USB, VBUS, and UART buses with a data transfer rate of 60MBps. Ideal for industrial applications due to its CMOS technology and compatibility with RS232, RS422, and RS485 standards.
SMMBT3904LT1G
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
MBRS340T3G
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
2N2222A
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
STM32H753BIT6
STMicroelectronics
STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.
RC0805FR-0710KL
Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SMBJ18CA
Bytesonic Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
M39029/56-351
TE Connectivity
TE Connectivity's M39029/56-351 is a CRIMP contact type backshell accessory with rated voltage of 115V. It operates b/w -65 to 175 °C, suitable for MIL-C-39029/56 connectors with wire gauge ranging from 28 to 22 AWG. Ideal for military applications requiring female contacts and copper alloy material.
Tesla Elektronicke Soucastky
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
A5G35S008N-3400
RF Power Field-Effect Transistors;
SD2921-10
SD2921-10 by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W.
MRF284S
Motorola
MRF284S by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 9dB Power Gain. Ideal for S BAND applications, it operates in ENHANCEMENT MODE with a max power dissipation of 87.5W at 200°C ambient temperature.
PD54008-E-E
PD54008-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
PD85006L-E
PD85006L-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount device ensures efficient performance in compact designs.
RF5L051K4CB4
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
PD55008L
PD55008L by STMicroelectronics is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 5A max Drain Current and 45W Power Dissipation. Package style is CHIP CARRIER, ideal for SOURCE connection in various electronic devices.
PD54003S-E
PD54003S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.
934061173112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD57045STR-E
PD57045STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
BLF3G21-30,112
Ampleon Netherlands B V
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Maximum Drain Current (ID): 4.5 A; Package Style (Meter): FLANGE MOUNT;
STAP57030
STAP57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
PD55035-E
PD55035-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.
MRF300AN-13MHZ
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
BLF6G15LS-250PBRN
N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 200 Cel; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Maximum Drain Current (Abs) (ID): 64 A; Maximum Drain Current (ID): 64 A;
TIM3742-25UL
Toshiba
Toshiba's TIM3742-25UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a max drain current of 20A and a power dissipation of 100W, this transistor operates in depletion mode at up to 175°C ambient temperature.
SD2932W
SD2932W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 500W max power dissipation. Ideal for high-power applications, it operates at up to 200°C.
LET20030C
LET20030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the L band. This surface-mount transistor supports high efficiency with a max temp of 200 °C.
TSD2921
TSD2921 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Min Power Gain of 12dB. It operates in the ULTRA HIGH FREQUENCY BAND, has a Max Power Dissipation of 300W, and is suitable for applications requiring high power amplification in the field of RF communications.
MRF6V2150NR1
NXP Semiconductors' MRF6V2150NR1 is a single N-channel RF Power FET for amplifier applications. Operating in enhancement mode, it offers a max temperature of 225°C and operates in the ultra-high frequency band. With a plastic/epoxy package body material, it features a rectangular shape and flat terminal form for surface mount applications.
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STAP1011-180
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 800 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY;
STAP57045
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Operating Temperature: 165 Cel; Maximum Drain Current (ID): 5 A;
STAP57060
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY;
STAP57100
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 65 V;
STAP85025S
STAP85035
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Maximum Operating Temperature: 165 Cel; Minimum DS Breakdown Voltage: 40 V;
STAP85050
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 40 V;
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